Fuji Electric Co., Ltd.

Masahiro Taoka

Hideaki Takahashi

Kenshi Terashima

Satoru Motohashi

Tomofumi Oose

Satoshi Sawayanagi

A drive device for a voltage-controlled semiconductor element. The drive device includes: a short-circuit current detection circuit which detects a short-circuit current flowing through the voltage-controlled semiconductor element; a timer circuit which outputs a time setting signal indicative of a determined time, responsive to the short-circuit current detection circuit detecting the short-circuit current; and a control power source voltage variable circuit which receives a power supply voltage applied to the drive device, decreases the power supply voltage for a period for which the control power source voltage variable circuit receives the time setting signal from the timer circuit, to thereby obtain a stepped-down voltage, and outputs the stepped-down voltage as a control power source voltage.

Drive device for voltage-controlled semiconductor element

A semiconductor device including a transistor section and a diode section, the semiconductor device having: a temperature sensing section; a neighboring transistor section adjacent to the temperature sensing section; a neighboring diode section adjacent to the temperature sensing section; and a first non-neighboring diode section that is not adjacent to the temperature sensing section, wherein the first non-neighboring diode section has a pattern different from the pattern of the neighboring diode section in the top view is provided.

Integrated circuit having a transistor, a diode, and a temperature sensor

A signal indicating temperature of an IGBT chip, after input into an overheat detection terminal, is simultaneously input into a first comparator for protection operation and a second comparator for precaution. At a normal time when the chip temperature is low, a first transistor connected to an alarm signal output terminal via a resistor and a second transistor connected to the alarm signal output terminal via a Zener diode are turned off, and the alarm signal output terminal whose voltage is pulled up by an external pull-up circuit is set to high level voltage. When the second comparator detects a precaution condition, the second transistor is turned on, and the alarm signal output terminal is set to intermediate level voltage. When the first comparator detects chip overheat, the first transistor is turned on, and the alarm signal output terminal is set to low level voltage.

Growing community of inventors

Matsumoto, Japan

Masahiro Taoka