Sony Corporation

Masahiro Tanaka

Masahiro Tada

Shun Mitarai

Koji Naniwada

Takashi Kinoshita

Toshiyuki Nishihara

Koji Watanabe

Akihiko Ochiai

Yukihisa Tsuneda

Shinya Morita

Keitaro Yamashita

Kenji Katori

Masanari Yamaguchi

Nicolas Nagel

Miho Ami

A method for manufacturing a micromachine is provided which can remove a sacrifice layer and can perform sealing without using a specific packaging technique. In a method for manufacturing a micromachine () including an oscillator (), a step of forming a sacrifice layer around a movable portion of the oscillator (); a step of covering a sacrifice layer with an overcoat film (), followed by the formation of a penetrating hole () reaching the sacrifice layer in the overcoat layer (); a step of performing sacrifice-layer etching for removing the sacrifice layer using the penetrating hole () in order to form a space around the movable portion; and a step of performing a film-formation treatment at a reduced pressure following the sacrifice-layer etching so as to seal the penetrating hole ().

Process for fabricating micromachine

A high frequency device including an electrostatic type vibrator, a pad, and a circuit. The electrostatic type vibrator is operable via a DC bias voltage. The pad is configured to supply the DC bias voltage. The circuit is positioned electrically between the pad and the vibrator. The circuit is configured to stabilize the DC bias voltage. The circuit and the high frequency signal device are on a common substrate.

High frequency device, power supply device and communication apparatus

Provided is a micro-electromechanical device capable of processing an electric signal in the high frequency region by a simple device structure. The micro-electromechanical device is formed, including an oscillator element having a plurality of electrodes disposed on a substrate and a beam facing the electrodes to oscillate by electrostatic drive. An input/output of a high frequency signal is applied to one of the combinations of the electrodes and the beam.

Micro-electromechanical device

A filter device configured with a plurality of micro-resonators and having a wide specific bandwidth. The filter device is configured as having a plurality of beam-structured, micro-resonators (), (), (), () electrically connected in a lattice-forming manner between two input terminals (), () for balanced input and two output terminals (), () for balanced output, each of the plurality of micro-resonators (), (), (), () being composed of a resonator group including a plurality of resonators differed in resonance frequency.

Filter device and transmitter-receiver utilizing beam-structured micro-resonators

A microresonator includes a beam-type resonator element in which a beam that is an oscillating portion of the resonator element has a high-resistance portion or an insulating portion.

Microresonator, band-pass filter, semiconductor device, and communication apparatus

A micro-oscillator is provided. In an example, the micro-oscillator applied to a signal filter and the like, ground capacitance thereof is reduced to control the loss of signal output. An oscillator element having a beam facing lower electrodes and to be electrostatically driven is formed on a substrate, and a wire width Wof a DC bias feeder wire connected to the beam is formed to be narrower than a width of the beam.

Micro-oscillator, semiconductor device and communication apparatus

The present invention provides a microresonator including a plurality of resonator elements arranged on a plurality of columns on a substrate. The resonator elements each have an input electrode, an output electrode, and a diaphragm that extends in a certain direction, and each pass a signal of a certain frequency. The plurality of resonator elements includes a plurality of first resonator elements arranged on first columns that are located on every other column of the plurality of columns, and having a first phase, and a plurality of second resonator elements arranged on second columns that are located on every other column, other than the first columns, of the plurality of columns, and having a second phase that is an opposite phase of the first phase.

Microresonator, manufacturing method, and electronic apparatus

A D/A converter capable of temporally controlling output of analog data during D/A conversion is provided. The digital to analog converter includes a ferroelectric non-volatile semiconductor memory. The ferroelectric non-volatile semiconductor memory includes a data line, a memory unit which has M memory cells, and M plate lines. Each of the memory cells includes a first electrode, a ferroelectric layer and a second electrode. The first electrode of the memory cells is shared in the memory unit and is connected to the data line. The second electrode of the mth memory cell is connected to the mth plate line. And the area of the ferroelectric layer of the memory cells varies among the memory cells.

Digital to analog converter including a ferroelectric non-volatile semiconductor memory, and method for converting digital data to analog data

In order to provide a nonvolatile semiconductor storage device designed to take off such existing restraint on the degree of freedom of device design as needed for the purpose of securing design margin, thus realizing a ferroelectric, nonvolatile storage device of high integration density, there is disclosed a capacitor using a ferroelectric thin film is provided, so that the apparent coercive electric field value in the operational guaranteed margin temperature of the nonvolatile semiconductor storage device when regarded as the voltage applied to the capacitor remains within the range of design margin of the nonvolatile semiconductor storage device at the coercive electric field value at the specified temperature, in which a metal oxide of a layer structure having the ferroelectric-to-normal dielectric phase transition point of 800&#xb0; C. or higher may be used for the ferroelectric thin film.

Nonvolatile semiconductor storage device

A trench is formed by forming a photoresist film on a second interlevel insulator and performing isoprotonic etching using the photoresist film as a mask. A lower electrode layer made of platinum (Pt), a dielectric film made of a dielectric material and an upper electrode layer made of platinum (Pt) are formed in this order by, for example, a CVD method respectively. Further, the lower electrode layer and the upper electrode layer are selectively removed by a CMP method except for the trench with the second interlevel insulator as an end point detection layer, flattening the surface at the same time. Accordingly, a capacitor having a structure which has a flat surface comprised of both edges of the lower electrode layer and the dielectric film, and the upper electrode layer is formed in the trench of the second interlevel insulator respectively. Etching can be easily performed even when a stable material such as platinum is used as an electrode material, simplifying the manufacturing procedure since the lower electrode layer, the dielectric film and the upper electrode layer are processed collectively.

Method for manufacturing a dielectric trench capacitor with a stacked-layer structure

An electrode for a capacitor having two electrodes and a capacitor insulation layer formed of a dielectric film sandwiched between the two electrodes, at least one of the electrodes being formed of a metal layer and a metal oxide layer, and the metal oxide layer being formed by oxidizing a surface of the metal layer on the basis of a diffusion-controlling reaction and being positioned in an interface to the capacitor insulation layer.

Process for the manufacturing of oxide electrodes for ferroelectric capacitor

A trench is formed by forming a photoresist film on an interlevel insulator and performing isoprotonic etching using the photresist film as a mask. A lower electrode layer made of platinum (Pt), a dielectric film made of a dielectric material and an upper electrode layer made of platinum (Pt) are formed in this order by, for example, CVD method respectively. Further, the lower electrode layer and the upper electrode layer are selectively removed by CMP method except for the trench with the interlevel insulator to be an end point detection layer and the surface is flattened at the same time. Accordingly, a capacitor having a structure which has a flat surface comprised of both edges of the lower electrode layer and the dielectric film, and the upper electrode layer is formed in the trench of the interlevel insulator respectively. Etching can be easily performed even a stable material such as platinum is used as an electrode material, and so that manufacturing procedure can be simplified since the lower electrode layer, the dielectric film and the upper electrode layer are processed collectively.

Dielectric capacitor and method of manufacturing same, and dielectric memory using same

A ferroelectric capacitor and a method of manufacturing the same are provided for reducing a crystal grain size while maintaining excellent ferroelectric properties so as to achieve a reduction in device size. A lower electrode, a ferroelectric layer and an upper electrode are formed on a substrate. The ferroelectric layer is formed into a plurality of stacked layers including an oxide of a layered crystal structure (Bi.sub.x (Sr, Ca, Ba).sub.y (Ta, Nb).sub.2 O.sub.9 .+-..sub.d). Proportion `y` of (Sr, Ca, Ba) in at least one of the layers is different from those of the other layers. That is, a variation in proportion `y` of (Sr, Ca, Ba) is provided in the ferroelectric layer. As a result, excellent ferroelectric properties are obtained and the crystal grain size of the oxide is reduced.

Ferroelectric capacitor, method of manufacturing same and memory cell

An electronic material is expressed by the composition formula M.sub.Ia M.sub.IIb O.sub.c (where a, b and c are compositions in atomic %, M.sub.I is at least one sort of noble metal selected from the group consisting of Pt, Ir, Ru, Rh and Pd, and M.sub.II is at least one sort of transition metal selected from the group consisting of Hf, Ta, Zr, Nb, V, Mo and W) having a composition within the range of 90.gtoreq.a.gtoreq.40, 15.gtoreq.b.gtoreq.2, 4.ltoreq.c and a+b+c=100. A dielectric capacitor comprises: a diffusion preventing layer made of the material expressed by the composition formula M.sub.ia M.sub.IIb O.sub.c ; a lower electrode on the diffusion preventing layer; a dielectric film on the lower electrode; and an upper electrode on the dielectric film. Another dielectric capacitor comprises: a diffusion preventing layer made of a material expressed by the composition formula M.sub.Ia M.sub.IIb O.sub.c (where a, b and c are compositions in atomic %, M.sub.II is at least one sort of noble metal selected from the group consisting of Pt, Ir, Ru, Rh and Pd, and M.sub.II is at least one sort of rare earth element) having a composition within the range of 90.gtoreq.a.gtoreq.40, 15.gtoreq.b.gtoreq.2, 4.ltoreq.c and a+b+c=100; a lower electrode on the diffusion preventing layer; a dielectric film on the lower electrode; and an upper electrode on the dielectric film.

Growing community of inventors

Kanagawa, Japan

Masahiro Tanaka