Fujitsu Corporation

Ngk Spark Plug Company, Limited

Kabushiki Kaisha Toshiba

Suzuki Motor Corporation

Fujitsu Vlsi Limited

Fujitsu Semiconductor Limited

Canon Kabushiki Kaisha

Nissan Motor Company Limited

Kyushu Institute of Technology

Masahiro Tanaka

Norikazu Ieda

Kazumi Ogawa

Reina Fukagai

Takahiro Suzuki

Hiroshi Inagaki

Kazuhiro Tomita

Masaki Hirata

Shinichi Shiotsu

Yoshinori Inoue

Ichiro Omura

Masakazu Yamaguchi

Hideaki Ninomiya

Yoshio Watanabe

Koji Okada

Tadashi Matsuda

Shigeru Hasegawa

Shinichi Yamamoto

Tomoyuki Furutono

Keigo Banno

Shinji Miyata

Junji Tagane

Shinichi Umekawa

Masanori Tsukuda

Norimichi Hiroshige

Kensuke Uehara

Kazuyoshi Maruyama

Isao Shimotsuhama

Satoshi Teramae

Kunihiko Takamatsu

Ryuji Oda

Akio Koga

Toshitsugu Kobayashi

Minoru Nishida

Hirokazu Kanma

Kaori Chigusa

Ryuji Fukuhara

Hiroyuki Tsukada

Tatsuki Hirabayashi

Yamato Miki

Reina Kito

Takahiro Okuno

Naoyuki Nakashima

Naoto Hamanaka

Tatsuaki Kitsuta

Akira Takenouchi

Yoshitaka Okazaki

Tomoaki Kojo

A production apparatus includes a workbench, a movement apparatus, a conveyance apparatus, a motion detector, and a control unit. The movement apparatus configured to move the workpiece on the workbench to a predetermined delivery position. The conveyance apparatus configured to convey the workpiece moved to the predetermined delivery position to an adjacent production apparatus. The motion detector configured to detect conveyance motion of the conveyance apparatus of the adjacent production apparatus. The control unit configured to operate the movement apparatus to move the workpiece on the workbench to the predetermined delivery position. If conveyance motion of the conveyance apparatus of the adjacent production apparatus is detected by the motion detector, the control unit operates the conveyance apparatus to convey the workpiece to a delivery position of the adjacent production apparatus.

Production system, production apparatus and method for controlling production system

A method for fabricating a high-voltage insulated gate type bipolar semiconductor device by comparing to a reference structure of the same includes determining a width S of a mesa region in which the gate insulating film and the MOS transistor are formed, and a trench depth D, based on a scaling ratio K, in comparison with a second width and a second trench depth of the reference structure, and setting a cell width 2W of the high-voltage insulated gate type bipolar semiconductor device to be equal in length to a second length of the reference structure, the scaling ratio K being defined as K=Y/X, where X indicates a size of a target portion to be miniaturized in the high-voltage insulated gate type bipolar semiconductor device, and Y indicates a size of a target portion to be miniaturized in the reference structure.

Method for fabricating high-voltage insulated gate type bipolar semiconductor device

When a connection control device determines that the connection control device is in a congested state, based on whether a usage of at least one of hardware resources necessary for call processing to establish a call connection is equal to or more than a predetermined threshold value, the CPU of the connection control device forcefully disconnects an established call connection after a connection available time elapses, and, when an INVITE message is transmitted from a terminal device, the CPU of the connection control device receives the INVITE message, calculates the wait time, creates and transmits a response message stating the wait time, and stores the message as a reserved call on a reservation list.

Telephony system, connection control method, connection control device and recording medium

A gas concentration detection apparatus and system including a gas sensor. Voltage Vd generated across detection resistor Rd through which pump current Ip flows is differentially amplified by OPand offset voltage Vofs is superposed thereon to obtain a detection voltage Vout. The amplification factor applied to the differential amplification of the voltage Vd is changed by turning switch SWon and off. When switch SWis turned on, the input terminal potentials of the operational amplifier OPare equalized, so that voltage Vofs is output as the detection voltage Vout. The detection voltage Vout contains an error attributable to the electronic components which form the circuit. The detection voltage Vout containing the error when SWis turned on is acquired as a correction voltage for each amplification factor, and is used for correction at the time of detection of the concentration so as to cancel the error.

Gas concentration detection apparatus and gas concentration detection system

A vehicle body structure includes a dash panel that partitions an engine chamber from the vehicle interior. An intake manifold for an engine is housed in the engine chamber, and an air box extends in a direction of the width of the vehicle and is located above the dash panel. A linking member is connectible to both the dash panel and the air box. At least a portion of the linking member overlaps a portion of the intake manifold in the direction of the width of the vehicle. When an impact occurs external of the vehicle, the shock to which the dash panel is subjected is transmitted to the air box via the linking member. The rigidity of the dash panel is increased to facilitate fracture of intake manifold, and the dash panel is controlled such that the dash panel is prevented from moving toward vehicle interior.

Vehicle body structure

A phase locked loop circuit includes an oscillator part configured to generate a reference signal by amplifying a signal generated by an oscillator, and a phase locked loop part configured to include a filter that outputs a control signal to a clock transmitting circuit that generates a clock signal in accordance with a phase difference between the reference signal and a feedback signal, wherein a drive capability of the oscillator part is controlled in accordance with the control signal.

PLL circuit and oscillator device

A semiconductor memory device includes a plurality of independently accessible memory cores. Each memory core includes at least one flag cell storing a flag value and a plurality of data cells storing data. An access control circuit included in the semiconductor memory device selects an access-control subject memory core from the memory cores based on the flag value of the at least one flag cell of each memory core.

Method for controlling semiconductor memory device

To provide a malfunction diagnosing method and apparatus capable of reliably determining a malfunction even where the malfunction occurs in a common wire connecting a gas sensor and a control circuit for driving it. In a gas concentration measurement unithaving a sensor control circuitwhich is connected to a sensor elementincluding an oxygen pump celland an oxygen concentration detection celland controls and drives this sensor element, a variation state of a terminal voltage at one connecting point (specifically, a Vs+ terminal) other than connecting points between electrodes facing a measurement chamber of each cellandand a common wireis detected by a malfunction detection circuitand an arithmetic processor. Based on this variation state of the terminal voltage, diagnosis of malfunction in the common wireis executed. When the common wireis broken, the terminal voltage at the Vs+ terminal varies with oscillations. Therefore, the malfunction detection circuitand the arithmetic processordetect this voltage variation with oscillations to output a malfunction determination signal to a CPU.

Method of diagnosing malfunction in gas concentration detecting unit and malfunction diagnostic apparatus thereof

A gas sensor diagnostic method includes the steps of counting the reversal number of times that a target air-fuel ratio for an air-fuel mixture to be supplied to an internal combustion engine reverses from a rich side to a lean side or from the lean side to the rich side through a specific air-fuel ratio defined as a boundary of the rich and lean sides; obtaining a detection signal of a gas sensor at constant time intervals during a diagnosis period between a timing when the count for the reversal number is started and a timing when the reversal number reaches a predetermined number; calculating a moderated signal by applying a moderation calculation using a predetermined moderation coefficient to the obtained detection signal; calculating a deviation between the obtained detection signal and the calculated moderated signal; and determining whether the gas sensor is in an abnormal state or not on the basis of the deviation.

Diagnostic method and apparatus for gas sensor

A gas sensor diagnostic method (or apparatus) is arranged to periodically obtain sensor output values of a gas sensor such as an oxygen sensor for an internal combustion engine, and to determine local extreme values from the sensor output values obtained during a period of interruption of fuel supply to the engine. Moreover, the local extreme values are compared with a first predetermined threshold level. When the number of the local extreme values reaches a predetermined first number, a diagnosis is performed to determine whether the gas sensor is in an improper condition or not, in accordance with results of the comparison of the local extreme values with the first threshold level.

Diagnostic method and control apparatus for gas sensor

A gas sensor diagnostic method includes: a fuel supply detecting step of detecting an interruption of a fuel supply to the internal combustion engine, and a restart of the fuel supply after the interruption of the fuel supply; a response time period accumulating step of determining a response time period by accumulating a first time period that the sensor output value reaches from a first threshold value to a second threshold value after the detection of the interruption of the fuel supply, and a second time period that the sensor output value reaches from a third threshold value to a fourth threshold value after the detection of the restart of the fuel supply after the interruption of the fuel supply; and an abnormal state diagnosing section of determining an abnormal state of the gas sensor when the response time period is greater than a predetermined time period.

A gas sensor diagnostic method includes the steps of counting the reversal number of times that a target air-fuel ratio for an air-fuel mixture to be supplied to an internal combustion engine reverses from a rich side to a lean side or from the lean side to the rich side through a specific air-fuel ratio defined as a boundary of the rich and lean sides; obtaining a detection signal of gas sensor at constant time intervals during a diagnosis period between a timing when the count for the reversal number is started and a timing when the reversal number reaches a predetermined number; calculating a first moderated signal by applying a first moderation calculation to the detection signal, and a second moderated signal by applying a second moderation calculation to the detection signal; calculating a deviation between the first and second moderated signals; and determining whether the gas sensor is in the abnormal state on the basis of the deviation obtained during the diagnosis period.

A p-type impurity layer is formed in an n-type semiconductor substrate. Since the p-type impurity layer has a low impurity concentration and a sufficiently shallow depth of 1.0 &#x3bc;m or less, the carrier injection coefficient can be reduced. In the p-type impurity layer, a p-type contact layer of a high impurity concentration is formed for reducing a contact resistance. Since the p-type contact layer has a sufficiently shallow depth of 0.2 &#x3bc;m or less, it does not influence the carrier injection coefficient. Further, a silicide layer is formed between the p-type contact layer and an electrode such that the contact-layer-side end of the silicide layer corresponds to that portion of the p-type contact layer, at which the concentration profile of the contact layer assumes a peak value. The silicide layer further reduces the contact resistance.

Electrode contact section of semiconductor device

The invention provides a clock generating circuit for generating a spectrum spread clock and carrying out high-speed and accurate phase control of a reference clock signal and an output clock signal, which is composed of compact circuits, and a method for generating the clock. The spectrum spread clock generating circuitis provided with a phase comparator unitthat compares the reference clock signal CLKS with the internal clock signal in terms of a phase difference, and outputs a control current ICin compliance with the result of comparison; a clock generating unitfor generating an output clock signal CLKO; a phase difference signal modulating unitfor outputting a control current IC; and a delay unitfor delaying the output clock in compliance with the control current ICand outputting the internal clock signal CLKN.

Clock generating circuit and clock generating method

An insulated gate semiconductor device, includes an isolating structure shaped in a circulating section along the periphery of a semiconductor substrate to isolate that part from an inside device region, a peripheral diffusion region of the semiconductor substrate located outside the isolating structure, a plurality of cell structures defined in the inside device region and divided in segments by insulated trench-shaped gates to have a base region covered with an emitter region in its upper surface, a collector region, and an emitter electrode electrically connected to the emitter region and the base region, a dummy base region contiguous to the cell structures and configured as a base region that has its upper surface left without the emitter region connected to the emitter electrode, an inner region defined in and insulated from the dummy base region, and a connection part to electrically connect the inner region to the emitter electrode.

Insulated gate semiconductor device

Growing community of inventors

Kasugai, Japan

Masahiro Tanaka