Fujifilm Corporation

Masahiro Takata

Masashi Ono

Atsushi Tanaka

Masayuki Suzuki

Fumihiko Mochizuki

Shunsuke Kitajima

Makoto Kikuchi

Takeharu Tani

Naoyuki Morooka

Takafumi Nakayama

Naozumi Shiraiwa

Tetsushi Miyata

Takayasu Nagai

Tomotake Ikada

Masanori Fujiwara

Toshiya Ideue

There is provided a photodetector element having a photoelectric conversion layer containing an aggregate of semiconductor quantum dots QD1 that contain a metal atom and containing a ligand L1 that is coordinated to the semiconductor quantum dot QD1, and a hole transport layer containing an aggregate of semiconductor quantum dots QD2 that contains a metal atom and containing a ligand L2 that is coordinated to the semiconductor quantum dot QD2, the hole transport layer being arranged on the photoelectric conversion layer, in which a band gap Eg2 of the semiconductor quantum dot QD2 is larger than a band gap Eg1 of the semiconductor quantum dot QD1, and a difference between the band gap Eg2 of the semiconductor quantum dot QD2 and the band gap Eg1 of the semiconductor quantum dot QD1 is 0.10 eV or more. There is also provided an image sensor including the photodetector element.

Photodetector element and image sensor

A photodetector element has a photoelectric conversion layer containing aggregates of semiconductor quantum dots QD1 that contain a metal atom and containing a ligand L1 that is coordinated to the semiconductor quantum dot QD1, and a hole transport layer containing aggregates of semiconductor quantum dots QD2 that contains a metal atom and containing a ligand L2 that is coordinated to the semiconductor quantum dot QD2, the hole transport layer being arranged on the photoelectric conversion layer, where the ligand L2 includes a ligand represented by any one of Formulae (A) to (C).

A photodetector element contains aggregates of PbS quantum dots and a ligand that is coordinated to the PbS quantum dot, in which the PbS quantum dot contains more than 0 mol and 1.40 mol or less of a Pb atom with respect to 1 mol of a S atom.

Photodetector element, manufacturing method for photodetector element, image sensor, dispersion liquid, and semiconductor film

A photodetector element includes a photoelectric conversion layer that contains aggregates of semiconductor quantum dots between a first electrode layer and a second electrode layer, where the first electrode layer is provided on a light incident side with respect to the second electrode layer, and a wavelength λ (nm) of target light to be detected by the photodetector element and an optical path length L(nm) of light having the wavelength λ, from a surface of the second electrode layer on a side of the photoelectric conversion layer to a surface of the photoelectric conversion layer on a side of the first electrode layer satisfy a relationship of the following Expression (1). m is an integer of 0 or more.0.05+/2≤/λ≤0.35+/2  (1)

Photodetector element, manufacturing method for photodetector element, and image sensor

In one embodiment of the present invention, provided are a method for producing indium tin oxide particles, including a step of obtaining a precursor solution including indium and tin by heating an indium carboxylate having 1 to 3 carbon atoms and a tin carboxylate having 1 to 3 carbon atoms in a solvent including a carboxylic acid having 6 to 20 carbon atoms, and a step of obtaining a reaction solution including indium tin oxide particles by adding dropwise the obtained precursor solution to a heated solvent including oleyl alcohol and linear alcohol having 14 to 18 carbon atoms, in which, in the solvent, a concentration A of the linear alcohol having 14 to 18 carbon atoms with respect to all solvents, in units of % by mass, and a concentration B of the oleyl alcohol with respect to all solvents, in units of % by mass, satisfy the expression 1; and a method for producing a curable composition./()>0.062:  Expression 1

Method for producing indium tin oxide particles and method for producing curable composition

Provided are a method for producing indium tin oxide particles and a method for producing a curable composition, the methods including a step of obtaining a precursor solution including indium and tin by heating indium acetate and tin acetate in a solvent including a carboxylic acid and having 6 to 20 carbon atoms, and a step of obtaining a reaction solution including indium tin oxide particles by dropwise adding the obtained precursor solution to a solvent having a hydroxy group and having 14 to 22 carbon atoms, which has a temperature of 230° C. to 320° C., in which an acetic acid concentration in the precursor solution is in a range of 0.5% by mass to 6% by mass.

Provided is a curable composition including oxide particles that include at least indium and tin, and to which a ligand having a hydrocarbon group and a binding site to the oxide particles is bonded; and a polymerizable compound, in which a content of the oxide particles in the composition is 18 mass % or more with respect to a total solid content of the composition; and a cured product of the curable composition or a lens unit including the cured product.

Curable composition, cured product, and lens unit

The present invention provides a curable resin composition including a bifunctional or more (meth)acrylate compound, indium tin oxide particles, and an acidic polymer, in which the acidic polymer has a moiety including a carboxyl group at a polymer skeleton of a (meth)acrylate compound and at any one of terminals of the polymer skeleton of a (meth)acrylate compound, and an acid value of the acidic polymer is 2.0 mgKOH/g or more and less than 100 mgKOH/g. The curable resin composition of the present invention provides a transparent cured product, hardly causes bubbles to be mixed in a case of applying the curable resin composition to a mold so as to form a lattice-shaped cured product, and also has a good peeled surface shape from the mold after curing. The present invention also provides a diffractive optical element including a surface having a diffraction grating shape and formed of the cured product of the curable resin composition.

Curable resin composition, cured product, diffractive optical element, multilayer diffractive optical element, and method for producing curable resin composition

A metal oxide thin film according to the present invention has a peak which is attributed to 1s electrons of nitrogen in a binding energy range of 402 eV to 405 eV in an XPS spectrum obtained by X-ray photoelectron spectroscopy, in which peak areas, which are obtained by separation of peaks having a peak energy of a metal-oxygen bond attributed to 1s electrons of oxygen, satisfy the following expression.0.9&#x3c;&#x2003;&#x2003;(1)(D represents a peak area of a component having a peak position in a binding energy range of 529 eV or higher and lower than 531 eV, and E represents a peak area of a component having a peak position in a binding energy range of 531 eV to 532 eV.)

Metal oxide thin film, method of producing same, and coating solution for forming metal oxide thin film used in said method

A method of producing a thin film transistor includes: forming a gate electrode; forming a gate insulating film that contacts the gate electrode; forming, by a liquid phase method, an oxide semiconductor layer arranged facing the gate electrode with the gate insulating film provided therebetween, the oxide semiconductor layer including a first region and a second region, the first region being represented by InGaZnO, the second region being represented by InGaZnO, and the second region being located farther from the gate electrode than the first region; and forming a source electrode and a drain electrode that are arranged apart from each other and are capable of being conductively connected through the oxide semiconductor layer.

Method of producing thin film transistor, thin film transistor, display device, image sensor, and X-ray sensor

Provided is a metal oxide film, including a component having a peak position, in an XPS spectrum thereof, within a range corresponding to a binding energy of from 402 eV to 405 eV, the metal oxide film satisfying a relationship represented by Equation (1): A/(A+B)&#x2267;0.39, when an intensity of peak energy attributed to nitrogen 1s electron is obtained by peak separation, and a manufacturing method of the same, an oxide semiconductor film, a thin-film transistor, a display apparatus, an image sensor, and an X-ray sensor. In Equation (1), A represents a peak area of the component having a peak position within a range corresponding to a binding energy of from 402 eV to 405 eV, and B represents a peak area of a component having a peak position within a range corresponding to a binding energy of from 406 eV to 408 eV.

Metal oxide film, method for manufacturing same, thin film transistor, display apparatus, image sensor, and X-ray sensor

A thin film transistor includes a gate electrode; a gate insulating film which contacts the gate electrode; an oxide semiconductor layer which includes a first region represented by In(a)Ga(b)Zn(c)O(d), wherein 0&#x3c;a&#x2266;37/60, 3a/7&#x2212;3/14&#x2266;b&#x2266;91a/74&#x2212;17/40, b&#x3e;0, 0&#x3c;c&#x2266;3/5, a+b+c=1, and d&#x3e;0, and a second region represented by In(p)Ga(q)Zn(r)O(s), wherein q/(p+q)&#x3e;0.250, p&#x3e;0, q&#x3e;0, r&#x3e;0, and s&#x3e;0, and located farther than the first region with respect to the gate electrode and which is arranged facing the gate electrode with the gate insulating film provided therebetween. A source electrode and a drain electrode are arranged so as to be apart from each other and are capable of being electrically conducted through the oxide semiconductor layer.

Thin film transistor and method of producing the same, display device, image sensor, X-ray sensor, and X-ray digital imaging device

A field effect transistor including: a gate insulating film; an oxide semiconductor layer that serves as an active layer and whose main structural elements are Sn, Zn and O, or Sn, Ga, Zn and O; and an oxide intermediate layer that is disposed between the gate insulating film and the oxide semiconductor layer, and whose resistivity is higher than that of the oxide semiconductor layer.

High mobility field effect transistor with ZN containing active layer, display device, sensor, and method of manufacturing field effect transistor

A method of fabricating a thin-film transistor, the method including: film-forming an active layer, that contains as a main component thereof an oxide semiconductor structured by O and at least two elements among In, Ga and Zn, in a film formation chamber into which at least oxygen is introduced, and b) heat treating the active layer at less than 300&#xb0; C. in a dry atmosphere, wherein the film-forming a) and the heat treating are carried out such that, given that an oxygen partial pressure with respect to an entire pressure of an atmosphere within the film formation chamber in the film-forming is POdepo (%), and an oxygen partial pressure with respect to an entire pressure of an atmosphere during the heat treating is POanneal (%), the oxygen partial pressure POanneal (%) at the time of the heat treating b) satisfies a relationship: &#x2212;20/3POdepo+40/3&#x2266;POanneal&#x2266;&#x2212;800/43POdepo+5900/43.

Method of manufacturing thin-film transistor, thin-film transistor, display apparatus, sensor, and digital X-ray image-capturing apparatus

There is provided a method of manufacturing a semiconductor element including: forming a semiconductor film of which a principal constituent is an oxide semiconductor; forming a first insulation film on a surface of the semiconductor film; applying a heat treatment in an oxidizing atmosphere; and, forming a second insulation film on a surface of the first insulation film, wherein a thickness of the first insulation film and a temperature of the heat treatment in the third step are adjusted such that, if the thickness of the first insulation film is represented by Z (nm), the heat treatment temperature is represented by T (&#xb0; C.) and a diffusion distance of oxygen into the first insulation film and the semiconductor film is represented by L (nm), the relational expression 0&#x3c;Z&#x3c;L=8&#xd7;10&#xd7;T&#x2212;0.0092&#xd7;T+3.6&#xd7;T&#x2212;468&#xb1;0.1 is satisfied.

Growing community of inventors

Kanagawa, Japan

Masahiro Takata