Jx Nippon Mining Metals Corporation

Jx Metals Corporation

Jx Advanced Metals Corporation

Masahiro Takahata

Takeshi Gohara

Yuichiro Shindo

Koichi Takemoto

Satoyasu Narita

Kazuyuki Satoh

Gaku Kanou

Toru Imori

Hideaki Fukuyo

A copper electrode material comprising Cu and unavoidable impurities, wherein the content of the unavoidable impurities is 1 ppm by mass or less and the average crystal grain diameter is 100 μm or less. A copper-containing electrode material having improved corrosion resistance is provided by the copper electrode material.

Copper electrode material

The present invention provides a corrosion-resistant CuZn alloy, the alloy having a Zn content of from 15 to 55% by mass, the balance being Cu and inevitable impurities, wherein a total content of Zn and Cu is 99.995% by mass or more, and wherein a number of pores is 1/cmor less based on optical microscopic observation.

Corrosion resistant CuZn alloy

Provided is a corrosion-resistant CuZn alloy, in which: the Zn content is 36.8 to 56.5 mass % and the balance is Cu and inevitable impurities; and the &#x3b2;-phase surface area percentage is 99.9% or greater.

Corrosion-resistant CuZn alloy

A high-purity calcium and method of producing same are provided. The method includes performing first sublimation purification by introducing calcium starting material having a purity, excluding gas components, of 4N or less into a crucible of a sublimation vessel, subjecting the starting material to sublimation by heating at 750&#xb0; C. to 800&#xb0; C., and causing the product to deposit or evaporate onto the inside walls of the sublimation vessel; and then, once the calcium that has been subjected to first sublimation purification is recovered, performing second sublimation purification by introducing the recovered calcium again to the crucible to the sublimation vessel, heating the recovered calcium at 750&#xb0; C. to 800&#xb0; C., and causing the product to similarly deposit or evaporate on the inside walls of the sublimation vessel thereby recovering calcium having a purity of 4N5 or higher.

Method for producing high-purity calcium

Provided are high-purity yttrium and a high-purity yttrium sputtering target each having a purity, excluding rare earth elements and gas components, of 5 N or more and containing 1 wt ppm or less of each of Al, Fe, and Cu; a method of producing high-purity yttrium by molten salt electrolysis of a raw material being a crude yttrium oxide having a purity, excluding gas components, of 4N or less at a bath temperature of 500&#xb0; C. to 800&#xb0; C. to obtain yttrium crystals, desalting treatment, water washing, and drying of the yttrium crystals, and then electron beam melting for removing volatile materials to achieve a purity, excluding rare earth elements and gas components, of 5N or more; and a technology capable of efficiently and stably providing high-purity yttrium, a sputtering target composed of the high-purity yttrium, and a metal-gate thin film mainly composed of the high-purity yttrium.

High-purity yttrium, process of producing high-purity yttrium, high-purity yttrium sputtering target, metal gate film deposited with high-purity yttrium sputtering target, and semiconductor element and device equipped with the metal gate film

The present invention provides a method for producing high-purity calcium, the method being characterized by the following: performing first sublimation purification by introducing calcium starting material having a purity, excluding the gas components, of 4N or less into a crucible of a sublimation vessel, subjecting the starting material to sublimation by heating at 750&#xb0; C. to 800&#xb0; C., and causing the product to deposit (evaporate) onto the inside walls of the sublimation vessel; and then, once the calcium that has been subjected to first sublimation purification is recovered, performing second sublimation purification by introducing the recovered calcium again to the crucible to the sublimation vessel, heating the recovered calcium at 750&#xb0; C. to 800&#xb0; C., and causing the product to similarly deposit (evaporate) on the inside walls of the sublimation vessel thereby recovering calcium having a purity of 4N5 or higher It is an object of the present invention to provide a technology with which calcium that has been brought to a high-purity can be obtained with stability to be used for the production of high-purity lanthanum, as well as to be used as a reducing agent for other rare earth elements, a desulfurizing or deoxidizing agent for metals, or a getter for high-vacuum pumps.

A method for producing high-purity lanthanum having a purity of 4N or more excluding rare earth elements other than lanthanum and gas components, wherein lanthanum having a purity of 4N or more is produced by reducing, with distilled calcium, a lanthanum fluoride starting material that has a purity of 4N or more excluding rare earth elements other than lanthanum and gas components, and the obtained lanthanum is subjected to electron beam melting to remove volatile substances. The method for producing high-purity lanthanum, in which Al, Fe, and Cu are respectively contained in the amount of 10 wtppm or less. The method for producing high-purity lanthanum, in which total content of gas components is 1000 wtppm or less. The present invention aims to provide a technique capable of efficiently and stably providing high-purity lanthanum, a sputtering target composed of high-purity lanthanum, and a thin film for metal gate that contains high-purity lanthanum as a main component.

Production method for high-purity lanthanum, high-purity lanthanum, sputtering target composed of high-purity lanthanum, and metal gate film containing high-purity lanthanum as main component

The present invention addresses the problem of providing a technique capable of efficiently and stably providing a method for producing high-purity lanthanum, the method characterized in that: a crude lanthanum oxide starting material having a purity of 2N-3N, excluding gas components, is used; the material is subjected to molten salt electrolysis at a bath temperature of 450-700&#xb0; C. to produce lanthanum crystals; the lanthanum crystals are subsequently desalted: and electron beam melting is then performed to remove volatile substances. The present invention also addresses the problem of providing a technique capable of efficiently and stably providing high-purity lanthanum, high-purity lanthanum itself, a sputtering target formed from high-purity material lanthanum; and a thin film for metal gates that has high purity lanthanum as the main component.

Method for producing high-purity lanthanum, high-purity lanthanum, sputtering target formed from high-purity lanthanum, and metal gate film having highy-purity lanthanum as main component

Provided are high-purity lanthanum, wherein the purity excluding rare-earth elements and gas components is 4N or higher, and amounts of aluminum, iron and copper in the lanthanum are respectively 100 wtppm or less; as well as high-purity lanthanum, wherein the purity excluding rare-earth elements and gas components is 4N or higher, amounts of aluminum, iron and copper in the lanthanum are respectively 100 wtppm or less, oxygen content is 1500 wtppm or less, elements of alkali metals and alkali earth metals are respectively 1 wtppm or less, elements of transition metals and high-melting-point metals other than those above are respectively 10 wtppm or less, and radioactive elements are respectively 10 wtppb or less. The invention aims to provide technology capable of efficiently and stably providing high-purity lanthanum, a sputtering target comprising high-purity lanthanum, and a thin film for metal gate mainly comprising high-purity lanthanum.

Growing community of inventors

Ibaraki, Japan

Masahiro Takahata