Semiconductor Energy Laboratory Co., Ltd.

Masahiro Takahashi

Shunpei Yamazaki

Jun Koyama

Kengo Akimoto

Masayuki Sakakura

Hisao Ikeda

Akiharu Miyanaga

Satoshi Murakami

Hideki Uochi

Hiroki Ohara

Yasuhiro Jinbo

Daisuke Matsubayashi

Tatsuya Honda

Yasuo Nakamura

Takashi Shimazu

Hideyuki Kishida

Takuya Hirohashi

Tetsuya Kakehata

Kaoru Tsuchiya

Yuichi Yanagisawa

Yuji Egi

Hitoshi Kunitake

Noriko Miyagi

Naoki Okuno

Fumito Isaka

Junpei Sugao

Misako Nakazawa

Ritsuko Nagao

Takehisa Hatano

Noriyuki Matsuda

Tomonori Nakayama

Shuntaro Kochi

A ferroelectric device () that includes a metal nitride film () with favorable ferroelectricity is provided. The ferroelectric device comprises a first conductor (), a metal nitride film over the first conductor, a second conductor () over the metal nitride film, a first insulator () over the second conductor, and a second insulator () over the first insulator. The first insulator includes regions in contact with the side surface of the metal nitride film and the side surface and the top surface of the second conductor; the metal nitride film has ferroelectricity; the metal nitride film contains a first element, a second element, and nitrogen; the first element is one or more elements selected from Group 13 elements; the second element is one or more elements selected from Group 2 elements to Group 6 elements and Group 13 elements other than the first element; the first conductor and the second conductor each contain nitrogen; the first insulator contains aluminum and oxygen; and the second insulator contains silicon and nitrogen.

Ferroelectric device and semiconductor device

A semiconductor device with a small variation in characteristics is provided. The semiconductor device includes an oxide, a first conductor and a second conductor over the oxide, a first insulator over the first conductor, a second insulator over the second conductor, a third insulator over the first insulator and the second insulator, a fourth insulator over the third insulator, a fifth insulator that is over the oxide and is located between the first conductor and the second conductor; a sixth insulator over the fifth insulator; a seventh insulator over the sixth insulator, and a third conductor over the seventh insulator. The third conductor includes a region overlapping with the oxide, the fifth insulator has a region that is in contact with each of the oxide, the first conductor, the second conductor, and the first to fourth insulators, and the sixth insulator contains hydrogen, nitrogen, oxygen, and silicon.

Semiconductor device and manufacturing method of semiconductor device

To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by InGaO(ZnO)(0<δ<1 and m=1 to 3 are satisfied), and the composition of the entire oxide semiconductor film including the c-axis-aligned crystalline region is represented by InGaO(ZnO)(0<x<2, 0<y<2, and m=1 to 3 are satisfied).

Oxide semiconductor film and semiconductor device

A semiconductor device having favorable electrical characteristics is provided. The semiconductor device in which first to third conductors are placed over a first oxide; first and second oxide insulators are placed respectively over the second and third conductors; a second oxide is placed in contact with a side surface of the first oxide insulator, a side surface of the second oxide insulator, and a top surface of the first oxide; a first insulator is placed between the first conductor and the second oxide; and the first oxide insulator and the second oxide insulator are not in contact with the first to third conductors, the first insulator, and the first oxide.

Semiconductor device and method for manufacturing semiconductor device

Provided is a structure of a transistor, which enables a so-called normally-off switching element, and a manufacturing method thereof. Provided is a structure of a semiconductor device which achieves high-speed response and high-speed operation by improving on characteristics of a transistor, and a manufacturing method thereof. Provided is a highly reliable semiconductor device. In the transistor in which a semiconductor layer, source and drain electrode layers, a gate insulating layer, and a gate electrode layer are stacked in that order. As the semiconductor layer, an oxide semiconductor layer which contains at least four kinds of elements of indium, gallium, zinc, and oxygen, and has a composition ratio (atomic percentage) of indium as twice or more as a composition ratio of gallium and a composition ratio of zinc, is used.

Method for fabrication of semiconductor device

A transistor whose characteristic degradation due to stray light is small is provided. The transistor includes a first insulator, a second insulator over the first insulator, a metal oxide over the second insulator, a first and a second conductor over the metal oxide, a third insulator over the first insulator, the second insulator, the metal oxide, the first conductor, and the second conductor, a fourth insulator over the metal oxide, a fifth insulator over the fourth insulator, and a third conductor over the fifth insulator. The third insulator has an opening to overlap with a region between the first conductor and the second conductor. The fourth insulator, the fifth insulator, and the third conductor are positioned in the opening. The metal oxide has a bandgap greater than or equal to 3.3 eV. The transistor has Vhigher than or equal to −0.3 V.

Transistor and display device

To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by InGaO(ZnO)(0&#x3c;&#x3b4;&#x3c;1 and m=1 to 3 are satisfied), and the composition of the entire oxide semiconductor film including the c-axis-aligned crystalline region is represented by InGaO(ZnO)(0&#x3c;x&#x3c;2, 0&#x3c;y&#x3c;2, and m=1 to 3 are satisfied).

Growing community of inventors

Atsugi, Japan

Masahiro Takahashi