Semiconductor Energy Laboratory Co., Ltd.

Sony Corporation

Canon Kabushiki Kaisha

Dai Nippon Printing Co., Ltd.

Oki Electric Industry Co., Ltd.

Fuji Xerox Co., Ltd.

Kabushiki Kaisha Toshiba

Sharp Kabushiki Kaisha Corporation

Mitsubishi Electric Corporation

Skhynix Inc.

Sony Group Corporation

Nsk Corporation

Nhk Spring Co., Ltd.

Toshiba Memory Corporation

Sony Semiconductor Solutions Corporation

Masahiro Takahashi

Shunpei Yamazaki

Akiharu Miyanaga

Takuya Hirohashi

Hideyuki Kishida

Masashi Tsubuku

Junichiro Sakata

Kengo Akimoto

Masashi Oota

Yohei Momma

Teruaki Ochiai

Jun Koyama

Hideki Uochi

Yasuo Nakamura

Junpei Sugao

Masayuki Sakakura

Kunihiko Suzuki

Tatsuya Honda

Motoki Nakashima

Hiroki Ohara

Takashi Shimazu

Mayumi Mikami

Nobuharu Ohsawa

Noritaka Ishihara

Junichi Koezuka

Yusuke Nonaka

Takatsugu Omata

Satoshi Seo

Hideko Inoue

Satoko Shitagaki

Mitsuo Okumura

Satoshi Akagawa

Keiichi Yoshioka

Koji Nakamura

Yutaka Hasegawa

Tetsunori Maruyama

Yoichi Mizutani

Hiroshi Kyusojin

Junichirou Sakata

Junya Maruyama

Takahiro Kawakami

Yasuharu Hosaka

Tsuneo Inaba

Takeshi Harada

Toshimitsu Obonai

Dong-Keun Kim

Yumiko Yoneda

Shuhei Yoshitomi

Hisao Ikeda

Satoshi Murakami

Akira Suzuki

Ryoji Nomura

Harue Osaka

Shinji Watanabe

Koji Dairiki

Yoshihiro Ueda

Kunihito Sawai

Yuichi Sato

Kenji Yamane

Yasuhiro Suzuki

Hiroshi Yamaguchi

Kaoru Tsuchiya

Hiroyuki Ito

Shigeatsu Yoshioka

Shuji Takahashi

Emiko Shiraishi

Noriko Miyagi

Hidenori Karasawa

Michiharu Naka

Takahiro Tsuge

Kenichi Okazaki

Junichi Tanaka

Takeshi Yamamoto

Takayuki Kato

Hiroshi Nakayama

Kenichi Okada

Yutaka Matsumoto

Katsuhiko Hoya

Koichi Goto

Ji-Wang Lee

Yoshinori Yamada

Takuya Matsuo

Nobuki Furue

Katsuyuki Fujita

Yoshiyuki Akiyama

Takashi Miyamoto

Ryosuke Watanabe

Ayako Iwase

Naoki Okuno

Shigeyasu Mori

Masafumi Wakazono

Satoshi Asai

Shunichi Ito

Koji Arai

Takuya Hasegawa

Hiroshi Matsukizono

Tsutomu Kaneko

Masahiko Yokota

Yuuji Takimoto

Takeshi Kunihiro

A positive electrode active material particle with little deterioration is provided. A power storage device with little deterioration is provided. A highly safe power storage device is provided. The positive electrode active material particle includes a first crystal grain, a second crystal grain, and a crystal grain boundary positioned between the crystal grain and the second crystal grain; the first crystal grain and the second crystal grain include lithium, a transition metal, and oxygen; the crystal grain boundary includes magnesium and oxygen; and the positive electrode active material particle includes a region where the ratio of the atomic concentration of magnesium in the crystal grain boundary to the atomic concentration of the transition metal in first crystal grain and the second crystal grain is greater than or equal to 0.010 and less than or equal to 0.50.

Positive electrode active material particle

A method for forming a positive electrode active material of a lithium ion secondary battery is provided. In the method for forming a positive electrode active material, a first container that includes a mixture of lithium oxide, fluoride, and a magnesium compound and fluoride that is outside the first container are provided in a heating furnace, and the heating furnace is heated at a temperature higher than or equal to a temperature at which the fluoride is volatilized or sublimated. It is further preferable that the fluoride be lithium fluoride and the magnesium compound be magnesium fluoride.

Method for forming positive electrode active material

A positive electrode active material having high capacity and excellent cycle performance is provided. The positive electrode active material has a small difference in a crystal structure between the charged state and the discharged state. For example, the crystal structure and volume of the positive electrode active material, which has a layered rock-salt crystal structure in the discharged state and a pseudo-spinel crystal structure in the charged state at a high voltage of approximately 4.6 V, are less likely to be changed by charge and discharge as compared with those of a known positive electrode active material.

Positive electrode active material, method for manufacturing positive electrode active material, and secondary battery

A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.

Metal oxide film and method for forming metal oxide film

A positive electrode active material has a small difference in a crystal structure between the charged state and the discharged state. For example, the crystal structure and volume of the positive electrode active material, which has a layered rock-salt crystal structure in the discharged state and a pseudo-spinel crystal structure in the charged state at a high voltage of approximately 4.6 V, are less likely to be changed by charging and discharging as compared with those of a known positive electrode active material. In order to form the positive electrode active material having the pseudo-spinel crystal structure in the charged state, it is preferable that a halogen source such as a fluorine and a magnesium source be mixed with particles of a composite oxide containing lithium, a transition metal, and oxygen, which is synthesized in advance, and then the mixture be heated at an appropriate temperature for an appropriate time.

Method for manufacturing positive electrode active material, and secondary battery

The present technology relates to a circuit board, a semiconductor apparatus, and electronic equipment that are configured to make it possible to more effectively suppress the occurrence of noise in signals. A circuit board includes first conductors arranged regularly in a first direction, second conductors arranged regularly in the first direction, and third conductors arranged regularly in the first direction. A first power supply connected to the first conductors, a second power supply connected to the second conductors, and a third power supply connected to the third conductors are different power supplies. The present technology can be applied to a circuit board of a semiconductor apparatus and the like, for example.

Circuit board, semiconductor apparatus, and electronic equipment

Provided is a light-emitting element with high external quantum efficiency, or a light-emitting element with a long lifetime. The light-emitting element includes, between a pair of electrodes, a light-emitting layer including a guest material and a host material, in which an emission spectrum of the host material overlaps with an absorption spectrum of the guest material, and phosphorescence is emitted by conversion of an excitation energy of the host material into an excitation energy of the guest material. By using the overlap between the emission spectrum of the host material and the absorption spectrum of the guest material, the energy smoothly transfers from the host material to the guest material, so that the energy transfer efficiency of the light-emitting element is high. Accordingly, a light-emitting element with high external quantum efficiency can be achieved.

Light-emitting element

To provide a novel metal oxide. The metal oxide includes a first region and a second region. A third region is included between the first region and the second region. An interface of the first region is covered with the third region. The crystallinity of the third region is lower than the crystallinity of the first region. The crystallinity of the second region is lower than the crystallinity of the third region. The size of the first region measured from an image observed with a transmission electron microscope is greater than or equal to 1 nm and less than or equal to 3 nm.

Metal oxide and transistor including the metal oxide

A probe card includes: a plurality of conductive contact probes; a probe head configured to accommodate ends of the plurality of contact probes; a laminated member laminated on the probe head on a side opposite to a side of the probe head; and a fastening member including a screw and a nut configured to fasten the probe head and the laminated member to each other, the screw including a head provided on the side of the probe head in which the contact probes extend outwardly, and a shaft inserted through the probe head and the laminated member, the shaft extending and having a diameter smaller than a diameter of the head. The shaft is fixed to the probe head, is threadedly connected to the nut on an end side opposite to the head side, and is configured to fasten the probe head and the laminated member to each other.

Probe card

An electronic apparatus and a non-transitory computer readable medium are disclosed. The electronic apparatus comprising: a processor; and a memory having program code stored thereon, the program code being such that, when it is executed by the processor, it causes the processor to: control a display of a first parameter-setting image that relates to values of one or more parameters related to imaging, the first parameter-setting image comprising a graph and an indicator point that is movable by user input, where the values of the one or more parameters related to imaging are set based on a location of the indicator point in the graph; and display, in association with the first parameter-setting image, a second parameter-setting image that relates to values of at least one additional parameter related to imaging.

Information processing apparatus and information processing method

A highly reliable semiconductor device with favorable electrical characteristics is provided. The semiconductor device includes a first insulator; a first conductor and a second conductor over the first insulator; an oxide provided between the first conductor and the second conductor; a second insulator over the first conductor, the second conductor, and the oxide; and a third conductor over the second insulator. A side surface of the first conductor includes a region in contact with one side surface of the oxide, a side surface of the second conductor includes a region in contact with the other side surface of the oxide. The level of a top surface of the first conductor, the level of a top surface of the second conductor, and the level of a top surface of the oxide are substantially the same. The conductivity of the first conductor is higher than that of the oxide, and the conductivity of the second conductor is higher than that of the oxide.

Semiconductor device and method for manufacturing semiconductor device

A contact probe includes a first plunger, a second plunger, a coil spring, and a pipe; the first plunger includes a first slide portion that slides along the inner periphery of the pipe; the second plunger includes a second slide portion that slides along the inner periphery of the pipe; and the coil spring includes: a first attachment portion that is attached to the first plunger and tightly wound; a second attachment portion that is attached to the second plunger and tightly wound; a coarsely wound portion; a first contact portion including one end connected to the first attachment portion and another end connected to the coarsely wound portion and contacting the pipe; and a second contact portion including one end connected to the coarsely wound portion and another end connected to the second attachment portion and contacting to the pipe.

Contact probe and signal transmission method

Growing community of inventors

Kanagawa, Japan

Masahiro Takahashi