Hitachi, Ltd.

Renesas Technology Corp.

Renesas Electronics Corporation

Other

Hitachi Ulsi Systems Co., Ltd.

Hitachi Information & Control Solutions, Ltd.

Masahiro Tadokoro

Kazuo Hiramoto

Mitsuhiro Noguchi

Hiraku Chakihara

Hiroshi Akiyama

Akio Nishida

Koji Matsuda

Naonori Wada

Takenobu Ikeda

Kunio Moriyama

Junichi Hirota

Shinji Kuniyoshi

Taisuke Takayanagi

Kazuo Yamazaki

Yoshihito Hori

Kousuke Kusakari

Yusuke Vincent Fujii

Masumi Umezawa

Hideaki Nishiuchi

Mamoru Katane

Shunji Kakiuchi

Hideaki Nihongi

Takayoshi Matsushita

Tomohisa Iwamoto

Yoshihisa Iwashita

Arao Nishimura

Ryosuke Shinagawa

Masaru Izawa

Masayuki Kojima

Kikuo Umegaki

Hisataka Fujimaki

Takashi Yunogami

Takeo Ishibashi

Tatsunori Murata

Masatsugu Nishi

Kazuyoshi Saito

Akira Noda

Takuya Hagiwara

Taeko Matsuura

Rintaro Fujimoto

Yuki Ito

Kazunori Yoshikawa

Kazumasa Yonekura

Tetsuro Norimine

Hiroaki Sakurabata

Yoshiharu Ono

Takao Kidani

Yusuke Fujii

Noriaki Ouchi

Masahiro Shioya

Takeji Sakae

Toshiyuki Terunuma

Makoto Inoue

The particle therapy system includes a particle beam generator for generating a particle beam; an irradiation nozzle arranged in a treatment room and irradiating a target with the particle beam; a particle beam transport system communicating the particle beam generator with the irradiation nozzle; an X-ray imaging device arranged in the treatment room and imaging the position of the target through irradiation with X-rays; a dosimeter arranged at a position passed by the particle beam in the irradiation nozzle; and a control apparatus performing control to exclude the measurement result of the X-rays from the measurement result obtained using the dosimeter when the X-rays are emitted during treatment.

Particle therapy system

In a method of manufacturing a semiconductor device using high-NA ArF liquid immersion exposure of a photoresist, a layer arrangement is provided capable of increasing reflection of a reference beam in an oblique incidence autofocus optical system, thereby enhancing autofocus and making it possible to reduce variation in the diameter of a contact hole.

Method of semiconductor manufacture utilizing layer arrangement to improve autofocus

The charged particle beam irradiation system includes a charged particle beam generating unit, scanning electromagnets, a beam irradiation apparatus, beam radiation dose measuring instrument(s), and a beam position measuring instrument for obtaining one or both of the position and the width of the beam scanned by the scanning electromagnets. The beam position measuring instrument obtains one or both of the position and the width of the beam for each irradiation spot and determines whether the obtained result is within an allowable range and obtains one or both of the position and the width of the charged particle beam for each split during irradiation to the spot with the charged particle beam regarding a split of which a dose is managed by dividing a part of or all of irradiation spots into irradiation sections and determines whether the obtained result is within an allowable range.

Charged particle beam irradiation system

A stacked type of radiation detector and a calibration method that enables the radiation detector to correct variations in sensor-specific output easily and within a short time, without using a water-phantom dose detector. The radiation detector is equipped with a sensor section including a plurality of sensors arranged in layers in a traveling direction of a particle beam. A dummy absorber has water-equivalent thickness equal to an average water-equivalent thickness of the sensors. A signal-processing unit calculates sensor-specific calibration coefficients using a measurement result obtained during irradiation of the radiation detector with the radiation when electrical signals developed in each sensor are measured, and a measurement result obtained during irradiation of the radiation detector with the radiation when the sensor section is moved in the traveling direction of the radiation, then the dummy absorber is set in place, and electrical signals developed in each sensor are measured.

Calibration method for radiation detector, and particle therapy system

A beam monitor system having a simple configuration for improving a measurement precision specifying a position and the width. A beam monitor system, comprising collection electrodes that include a plurality of groups each having a plurality of adjacent wire electrodes, and detect an ionized particle beam passing therethrough, a first signal processing device that sets one wire electrode in the groups of the collection electrodes as a typical wire electrode, receives a detection signal output from the typical wire electrode to process the signal and a beam monitor controller that obtains a beam position of the ionized particle beam that has passed through the wire electrodes on the basis of a processed signal from the first signal processing device.

Beam monitor system and particle beam irradiation system

A charge collection electrode is formed of a plurality of groups each of which is made up of a plurality of adjoining wire electrodes. Further, all the wire electrodes are connected to channels of a signal processing device by the same number of lines as the wire electrodes belonging to one group so that each detection signal outputted from one wire electrode selected from each group is inputted through the same line and so that no two adjoining channels are physically continuous in regard to a certain set of consecutive measurement channels. The signal processing device determines group information indicating to which group the wire electrodes that sent the inputted detection signals belong and outputs a processing signal including the group information to a beam monitor controller. The beam monitor controller determines the position and the beam width of the charged particle beam that passed through the wire electrodes.

The present invention provides, at low cost, a multilayer radiation detector whose position relative to a beam axis can be verified. The radiation detector includes a plurality of sensors that react to radiation and are stacked in parallel inlayers in a traveling direction of the radiation. The sensors are each sectioned into a central region including the center of the sensor and another region surrounding the central region. The radiation detector independently measures signals measured by the central regions and signals measured by the other regions. Thus, the position of the radiation detector can be verified.

Radiation detector and verification technique of positioning accuracy for radiation detector

Disclosed is a beam monitor system in which signals outputted from a plurality of wires are divided in a multi-wire type monitor for measuring a beam profile of a charged particle beam, an identical number of the wires are grouped, the signals of the respective groups are taken out one piece by one piece to be connected with each other, and the number of the pieces, corresponding to a number of the wires belonging to the one group, are put together to be connected to a signal processor storing connection information.

A charged particle beam irradiation system includes a synchrotron which accelerates an ion beam, an irradiation apparatus for irradiating an object with the ion beam introduced from the synchrotron, detection means for measuring an amount of accumulated charge of the ion beam that orbits in the synchrotron immediately before an extraction control period in an operating cycle of the synchrotron, and beam extraction control means for controlling extraction of the ion beam based on the measurement result of the accumulated beam charge amount so that extraction of a total amount of the ion beam is to be completed with an expiration of an extraction control time, the extraction control time representing a length of the extraction control period of the synchrotron and being set in advance.

Charged particle beam irradiation system and charged particle beam extraction method

It is an object of the present invention to provide a method of manufacturing a semiconductor device that reduces the deterioration in processed configuration and the pattern roughness of a film to be processed, and is close to the original design and applicable to a dual damascene step and the like. The manufacturing method comprises a processing mask layer forming step of forming a processing mask layer (a lower organic film and a middle layer) comprising at least one film, and hardening treatment for at least one film of the processing mask layer by applying a film and heat hardening treatment; a processing mask layer etching step of applying a resist film for exposure to the processing mask layer, exposing and developing it to form a resist pattern, and etching the processing mask layer using the resist pattern as a mask; and a film to be processed etching step of etching the film to be processed using the pattern of the processing mask layer formed at the processing mask layer etching step as a mask.

Manufacturing method of semiconductor device

In forming five trenches buried with an intermediate conductive layer for connecting transfer MISFETs and driving MISFETs with vertical MISFETs formed thereover, in which the second and third trenches, and the first, fourth, and fifth trenches are formed separately by twice etching using first and second photoresist films as a mask. Since all the trenches can be formed at a good accuracy even in a case where the shortest distance between the first trench and the second or third trench, and the shortest distance between the second or third trench and the fourth trench is smaller than the resolution limit for the exposure light, the distance between each of the five trenches arranged in one identical memory cell can be reduced to be smaller than resolution limit for the exposure light.

Method of manufacturing a semiconductor integrated circuit device

The present invention improves the accuracy of therapy by checking in real time whether an spread-out Bragg peak (SOBP) width agrees with a desired width during irradiation with a beam. The device for outputting a charged particle beam includes a charged particle beam generatorincluding a synchrotron; a range modulation device such as a range modulation wheel (RMW)which forms a Bragg peak of an ion beam extracted from this charged particle beam generator; an irradiation devicewhich is located in the direction of ion beam propagation of this RMW deviceand includes a dose monitorfor detecting a dose of the ion beam; and an SOBP width calculation devicewhich calculates ion beam Bragg peak formed by the RMW devicebased on a detection value of the dose monitor

Device and method for outputting charged particle beam

Growing community of inventors

Hitachiohta, Japan

Masahiro Tadokoro