Japan Display Inc.

Sony Corporation

Toshiba Matsushita Display Technology Co., Ltd.

Kabushiki Kaisha Toshiba

Kansai Paint Company, Ltd.

Sony Semiconductor Solutions Corporation

The University of Tokyo

Nippon Electric Co., Ltd.

Kel Corporation

Masahiro Tada

Takashi Nakamura

Hirotaka Hayashi

Miyuki Ishikawa

Yoshiro Aoki

Yutaka Umeda

Makoto Shibusawa

Shun Mitarai

Takanori Tsunashima

Takashi Kinoshita

Masahiro Tanaka

Akio Takimoto

Makoto Uchida

Koichi Ikeda

Masahiro Yoshida

Masayoshi Fuchi

Koji Naniwada

Hiroyuki Kimura

Yukio Tanaka

Shinya Morita

Satoru Tomita

Takayuki Imai

Masayuki Hongu

Yoshio Ishigaki

Hideyuki Takahashi

Osamu Itou

Toshiki Kaneko

Yasushi Tateshita

Hideo Kido

Kazuhide Mochizuki

Hirofumi Kato

Keiichi Saito

Tomoyuki Ito

Takahiro Toyoshima

Norio Tada

Yasuo Saruhashi

Koji Ouchi

Hikaru Iwata

Takashi Okada

Hirokazu Ikegami

Koya Nakamichi

Takahiko Endo

Takeshi Taniguchi

Hiroshi Mizuhashi

Hitoshi Tanaka

Takashi Nakano

Yoshihiro Aoki

Fumitaka Gotoh

Daiichi Suzuki

Hiroki Nakamura

Takao Someya

Yoshiaki Masuda

Shinji Miyazawa

Akihiko Saitoh

Youichi Asakawa

Akira Akiba

Chihiro Arai

Kazuo Yamagiwa

Tomoyuki Yokota

Masanari Yamaguchi

Norihiro Kubo

Tadashi Saito

Shoichi Tanaka

Atsuhiro Ando

Marina Mochizuki

Hideaki Katsuta

Yoshiaki Nakazaki

Hisafumi Takahashi

Yasuyuki Ito

Nobutaka Tani

Kosuke Uchida

Takao Sumi

Takao Ooshima

Hirotaka Sugiyama

Sotetsu Saito

Koichi Yata

Ikuo Sako

Hirohisa Tsuda

Shinichi Hirota

Shun Mitari

Keitaro Yamamoto

Hirokazu Ichikawa

Mitsuo Fukushima

Tomokatsu Kinugawa

According to an aspect, a detection device includes: a substrate; and a plurality of optical sensors formed by stacking first and second lower electrodes, a lower buffer layer, an active layer, an upper buffer layer, and an upper electrode on the substrate in the order as listed. The first lower electrodes are arranged so as to be separated for each of the optical sensors. The second lower electrodes are provided so as to surround the first lower electrodes, respectively. The lower buffer layer, the active layer, the upper buffer layer, and the upper electrode are provided continuously over the optical sensors so as to cover the first and the second lower electrodes.

Detection device

A detection device includes a photodiode, and a thin-film transistor coupled to the photodiode. The thin-film transistor includes a semiconductor layer between a light-blocking layer and the photodiode, and an electrode layer between the semiconductor layer and the photodiode, and the electric layer includes a source electrode and a drain electrode of the thin-film transistor. The source electrode extends to a position facing the light-blocking layer with the semiconductor layer interposed therebetween.

A biometric authentication system is a biometric authentication system having a detection device and an authentication device performing personal authentication. The detection device has a plurality of sensor elements, a plurality of gate lines and a plurality of signal lines provided in correspondence with the sensor elements, and gate line drive circuit scanning the gate lines.

Biometric authentication system and living body information detection device

A detection device comprising: an input unit configured to receive an operation of a user; a biosensor provided on the input unit and configured to detect biological information on the user; a position sensor configured to detect an operating position that is a position on the input unit where the user has performed the operation; and a controller, wherein the controller comprises: an operation determination unit configured to determine, based on the operating position detected by the position sensor, whether the user has operated the input unit along a predetermined trajectory; and a biological information acquirer configured to, when the user is determined to have operated the input unit along the predetermined trajectory, acquire, from the biosensor, the biological information on the user when the user has operated the input unit along the predetermined trajectory.

Detection device and method for authentication

A detection device includes a photoelectric conversion portion in which a plurality of photodiodes are arranged in a planar shape, a light source configured to irradiate the photodiodes with light, and a heating electrode provided so as to face the photoelectric conversion portion, and configured to generate heat and conduct the heat to the photoelectric conversion portion.

Detection device with heating electrode

A detection device includes an input unit configured to receive an operation of a user, and a sensor provided in the input unit and configured to detect biological information of the user when the user operates the input unit.

Detection device and authentication method

According to one embodiment, a lateral-electric-field liquid crystal display device includes a light-emitting display layer including OLEDs and a driving circuit controlling light emission of the OLEDs, a moisture impermeable film provided to be laminated on the light-emitting display layer to prevent infiltration of moisture into the light-emitting display layer, an optical substrate provided separately from the moisture impermeable film and subjecting light from the light-emitting display region to optical processing, a first touch electrode group serving as one electrode group of touch electrodes and provided on a back surface of the optical substrate, and an extraction electrode group formed to be laminated on the moisture impermeable film, the extraction electrode group and the optical substrate have an overlapping part in plan view, and electrodes of the first touch electrode group being electrically connected to electrodes of the extraction electrode group in the overlapping part.

Display device

The present technology relates to a solid-state imaging device and an electronic device that can expand a dynamic range in a pixel having a high-sensitivity pixel and a low-sensitivity pixel. The solid-state imaging device includes a pixel array unit in which a plurality of pixels is arranged in a two-dimensional manner, in which the pixel includes a first photoelectric conversion unit and a second photoelectric conversion unit having lower sensitivity than the first photoelectric conversion unit, and a size of the second photoelectric conversion unit in an optical axis direction in which light enters is smaller than a size of the first photoelectric conversion unit in the optical axis direction. The present technology can be applied to a backside-illumination CMOS image sensor, for example.

Solid-state imaging device with a pixel having a partially shielded photoelectric conversion unit region for holding charge

A detection device comprising: an insulating substrate; a plurality of gate lines that are provided on the insulating substrate, and extend in a first direction; a plurality of signal lines that are provided on the insulating substrate, and extend in a second direction intersecting the first direction; a switching element coupled to each of the gate lines and each of the signal lines; a first photoelectric conversion element that comprises a first semiconductor layer containing amorphous silicon, and is coupled to the switching element; and a second photoelectric conversion element that comprises a second semiconductor layer containing polysilicon, and is coupled to the switching element.

Provided are a substrate, an organic material layer provided above the substrate at a position overlapping at least a detection region, a plurality of detection electrodes provided between the substrate and the organic material layer in a direction orthogonal to the substrate, a first switching element provided to each of the detection electrodes, a plurality of gate lines coupled with some first switching elements and extending in a first direction, a plurality of signal lines coupled with some first switching elements and extending in a second direction intersecting the first direction, and a drive circuit configured to supply gate drive signals having potentials determined for the respective gate lines based on a predetermined code to the respective first switching elements through the gate lines.

A photodiode array is provided and includes insulating substrate; photodiodes arrayed in detection region of insulating substrate, photodiodes configured to output signal in accordance with light incident on photodiodes; first switching elements corresponding to photodiodes and including first semiconductor made of oxide semiconductor; gate lines coupled with first switching elements and extending in first direction; signal lines coupled with first switching elements and extending in second direction intersecting first direction; and gate line drive circuit including second switching element that includes second semiconductor made of polycrystalline silicone, gate line drive circuit being provided in peripheral region outside detection region and configured to drive gate lines, wherein photodiodes includes translucent conductive layer that is cathode, and translucent conductive layer overlaps none of signal lines in plan view.

Photodiode array

According to an aspect, a detection device includes: a substrate; a plurality of photodiodes arranged on the substrate; a light source configured to emit light to an object to be detected; a detection circuit configured to detect first detection signals based on reverse bias currents of the photodiodes when the light source is off, and to detect second detection signals based on the reverse bias currents of the photodiodes when the light source is on; and a memory configured to store first imaging data based on the first detection signals when the light source is off, second imaging data based on the second detection signals when the light source is on, and difference data between the first imaging data and the second imaging data.

According to an aspect, a detection device includes: photodiodes; a light source; a detection circuit configured to detect detection signals output from the photodiodes; and an exposure period adjusting circuit configured to determine an exposure period of the photodiodes. A relation between an output value output from the detection circuit and the exposure period comprises a linear region and a saturated region, and a gradient of the output value with respect to the exposure period in the saturated region is smaller than a gradient of the output value with respect to the exposure period in the linear region. The exposure period adjusting circuit is configured to determine the exposure period based on a first output value output from the detection circuit in a first exposure period, a second output value output from the detection circuit in a second exposure period, and a reference output value set in advance.

A fingerprint detection apparatus comprising: an insulating substrate; a plurality of photoelectric conversion elements arrayed in a detection region of the insulating substrate, each of the photoelectric conversion elements configured to output a signal in accordance with light incident on each of the photoelectric conversion elements; first switching element, each corresponding to each of the photoelectric conversion elements and including a first semiconductor made of oxide semiconductor; a plurality of gate lines coupled with the first switching elements and extending in a first direction; a plurality of signal lines coupled with the first switching elements and extending in a second direction intersecting the first direction; and a gate line drive circuit including a second switching element that includes a second semiconductor made of polycrystalline silicone, the gate line drive circuit being provided in a peripheral region outside the detection region and configured to drive the gate lines.

Fingerprint detection apparatus and display apparatus

Growing community of inventors

Tokyo, Japan

Masahiro Tada