Toyota Jidosha Kabushiki Kaisha

Denso Corporation

Flosfia Inc.

Kabushiki Kaisha Toyota Chuo Kenkyusho

Osaka University

Rensselaer Polytechnic Institute

Masahiro Sugimoto

Narumasa Soejima

Yukihiko Watanabe

Hidefumi Takaya

Takashi Shinohe

Tsutomu Uesugi

Tetsu Kachi

Shinichiro Miyahara

Isao Takahashi

Tsuyoshi Ishikawa

Yuichi Takeuchi

Hiroyuki Ueda

Jun Morimoto

Yasuo Takahashi

Akinori Seki

Naohiro Suzuki

Akira Kawahashi

Masakatsu Maeda

Sachiko Aoi

Akitaka Soeno

Toshimi Hitora

Tomohiro Mimura

Yoshitaka Nakano

Yusuke Yamashita

Toshimasa Yamamoto

Shoji Mizuno

Kensaku Yamamoto

Hideo Matsuki

Masakazu Kanechika

Tokiyoshi Matsuda

Hiroki Watanabe

Yasuhiro Ebihara

Takashi Kanemura

Koji Amazutsumi

Kenji Ito

Fusao Hirose

Yasuo Kitou

Hideyuki Uehigashi

Junji Ohara

Kazumi Chida

Masahito Kodama

Masaru Nagao

Tat-Sing Chow

Yasushi Higuchi

Hidemi Senda

Yasushi Furukawa

Yu Suzuki

Hitoshi Kambara

Masato Hashimoto

Tatsuya Toriyama

Osamu Ishiguro

Zhongda Li

Eiko Hayashi

Keiko Neki

Norihisa Okayama

There is provided a semiconductor device comprising at least, a crystalline oxide semiconductor layer which has a band gap of 4.5 eV or more; and a field-effect mobility of 10 cm/V·s or higher.

Semiconductor device comprising crystalline oxide semiconductor layer and semiconductor system having the same

A semiconductor device including at least one inversion channel region includes an oxide semiconductor film containing a crystal that has a corundum structure at the inversion channel region.

Semiconductor device and semiconductor system including semiconductor device

A semiconductor device with enhanced semiconductor characteristics that is useful for power devices. A semiconductor device, including: an n-type semiconductor layer; one or more p-type semiconductors; an electrode, the one or more p-type semiconductors that are provided between the n-type semiconductor layer and the electrode, and at least a part of the one or more p-type semiconductors is protruded in the electrode.

Semiconductor device including one or more p-type semiconductors provided between an n-type semiconductor layer and an electrode

A semiconductor device includes an oxide semiconductor film having a corundum structure or containing as a major component gallium oxide or a mixed crystal of gallium oxide, and the semiconductor device is a normally-off semiconductor device with a threshold voltage that is 3V or more.

The disclosure provides a semiconductor apparatus capable of keeping a semiconductor characteristics and realizing excellent semiconductor properties even when using an n type semiconductor (gallium oxide, for example) having a low loss at a high voltage and having much higher dielectric breakdown electric field strength than SiC. A semiconductor apparatus includes a gate electrode and a channel layer formed of a channel directly or through other layers on a side wall of the gate electrode, and wherein a portion of or whole the channel layer may be a p type oxide semiconductor (iridium oxide, for example).

Semiconductor apparatus

A semiconductor device including a semiconductor element is provided. The semiconductor element includes a saturation current suppression layer formed above a drift layer and including electric field block layers arranged in a stripe manner and JFET portions arranged in a stripe manner. The electric field block layers and the JFET portions are alternately arranged. The semiconductor element includes trench gate structures. A longer direction of the trench gate structure intersects with a longer direction of the electric field block layer and a longer direction of JFET portion. The JFET portion includes a first layer having a first conductivity type impurity concentration larger than the drift layer and a second layer formed above the first layer and having a first conductivity type impurity concentration smaller than the first layer.

Manufacturing method of semiconductor device including semiconductor element of inversion type

A semiconductor apparatus capable of reducing the leakage current in the reverse direction, and keeping characteristics thereof, even when using n type semiconductor (gallium oxide, for example) or the like having a low-loss at a high voltage and having much higher dielectric breakdown electric field strength than SiC is provided. A semiconductor apparatus includes a crystalline oxide semiconductor having a corundum structure as a main component, and an electric field shield layer and a gate electrode that are respectively laminated directly or through other layers on the n type semiconductor layer, wherein the electric field shield layer includes a p type oxide semiconductor, and is embedded in the n type semiconductor layer deeper than the gate electrode.

A semiconductor device with enhanced semiconductor characteristics that is useful for power devices. A semiconductor device, including: an n-type semiconductor layer; an electrode; two or more p-type semiconductors provided between the n-type semiconductor layer and the electrode, the n-type semiconductor layer containing a corundum-structured crystallin oxide semiconductor as a major component, a number of the two or more p-type semiconductor that is equal to or more than three, and the two or more p-type semiconductors that are embedded in the n-type semiconductor layer.

Semiconductor device

A semiconductor device with an enhanced semiconductor characteristics that is useful for power devices. A semiconductor device including: a semiconductor region; a barrier electrode arranged on the semiconductor region; and two or more adjustment regions of barrier height that are on a surface of the semiconductor region and arranged between the semiconductor region and the barrier electrode, the adjustment regions are configured such that barrier height at an interface between the adjustment regions and the barrier electrode is higher than barrier height at an interface between the semiconductor region and the barrier electrode.

Semiconductor device including two or more adjustment regions

Semiconductor device including saturation current suppression layer

A crystalline oxide semiconductor with excellent crystalline qualities that is useful for semiconductors requiring heat dissipation is provided. A crystalline oxide semiconductor including a first crystal axis, a second crystal axis, a first side, and a second side that is shorter than the first side, a linear thermal expansion coefficient of the first crystal axis is smaller than a linear thermal expansion coefficient of the second crystal axis, a direction of the first side is parallel and/or substantially parallel to a direction of the first crystal axis, and a direction of the second side is parallel and/or substantially parallel to a direction of the second crystal axis.

Crystalline oxide semiconductor

In a first aspect of a present inventive subject matter, a semiconductor device includes an n-type semiconductor layer, an i-type semiconductor layer and a p-type semiconductor layer. The i-type semiconductor layer includes an oxide semiconductor as a major component. The oxide semiconductor that is included as the major component of the i-type semiconductor layer includes at least one metal selected from among aluminum, indium, and gallium.

In a first aspect of a present inventive subject matter, a semiconductor device includes an n-type semiconductor layer including a first semiconductor as a major component, an i-type semiconductor layer including a second semiconductor as a major component and a p-type semiconductor layer including a third semiconductor as a major component. The second semiconductor contains a corundum-structured oxide semiconductor.

A silicon carbide semiconductor device includes: a main cell region; a sense cell region; a MOSFET arranged in each of the main cell region and the sense cell region and disposed in a semiconductor substrate having a high impurity concentration layer and a drift layer; an element isolation layer arranged between the main cell region and the sense cell region, and surrounding the sense cell region; and a plurality of electric field relaxation layers arranged between the main cell region and the sense cell region. The MOSFET includes: a base region; a source region; a plurality of deep layers; a trench gate structure; a source electrode; and a drain electrode. The deep layers and the electric field relaxation layers are arranged in a stripe pattern at a predetermined interval.

Silicon carbide semiconductor device

A semiconductor device includes: a drain region; a drift layer made of a first conductivity type semiconductor with lower impurity concentration than the drain region; a base region made of a second conductivity type semiconductor; a source region made of the first conductivity type semiconductor with higher concentration; a contact region made of the second conductivity type semiconductor with higher concentration; a trench structure having a first gate insulation film and a first gate electrode arranged at an opening side of the trench and to be deeper than the base region, and a bottom part insulation film; a source electrode electrically connected to the source and contact regions; and a drain electrode at a rear side of the drain region. The drain is arranged to be deeper than the base region. The first gate insulation film is made of higher dielectric insulation material than the bottom part insulation film.

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Toyota, Japan

Masahiro Sugimoto