Fujitsu Semiconductor Limited

Masahiro Sueda

Rikio Takase

Akihiro Usujima

Mitsuaki Igeta

A patterning method includes defining, in the case of an electric current which exceeds an allowable limit flowing between first conduction type well regions arranged in a semiconductor substrate, a first pattern between the first conduction type well regions; defining a second pattern by removing, in the case of a first region in which arrangement is inhibited being in the first pattern, the first region from the first pattern; defining a third pattern by removing, in the case of a second region which exceeds a fabrication limit being in the second pattern, the second region from the second pattern; and using the third pattern as a dummy active region in a second conduction type well region arranged in the semiconductor substrate.

Method of defining shape and position of dummy active region by processing data using a patterning apparatus

A fuse element reading circuit including a first fuse element having a resistance which differs in accordance with whether the first fuse element is in a blown state or an unblown state, a reference voltage output circuit unit that outputs a reference voltage that differs in accordance with a normal mode or a test mode, and a voltage comparison circuit unit that compares a read voltage corresponding to the resistance of the first fuse element with the reference voltage output from the reference voltage output circuit unit.

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Kawasaki, Japan

Masahiro Sueda