Megachips Corporation

Ricoh Company, Ltd.

Neural Systems Corp.

Other

Crystal Device Corporation

International Chip Corporation

Masahiro Shindo

Toshifumi Asakawa

Takashi Sawada

Akira Takata

Tetsuo Hikawa

Daisuke Kosaka

Yukihiro Ukai

Toshikazu Yoshimizu

Sumiyoshi Ueyama

Hideaki Kobayashi

Mikio Kyomasu

Toshiyuki Araki

Shinobu Fukunaga

Yukio Kadowaki

Haruo Nakayama

Shunpei Tamaki

Toshio Kawakami

Shoji Matsumoto

Motoaki Yasui

Kenichi Kurihara

Masashi Kuramoto

Tai Sugimoto

Toshio Katsura

Injie Nakao

A memory system connected to a host computer generating input information, includes a storage configured to store application program executed by the host computer, a contents database relating various contents candidate information used by the host computer with either of plural adjustment candidate identification information, and input information inputted from the host computer, circuitry configured to infer, by executing inference by an artificial intelligence algorithm, specific adjustment candidate identification information as adjustment identification information from the plurality of adjustment candidate identification information according to the input information and select specific contents candidate information as adjustment contents information from the contents database using the adjustment identification information and an interface configured to output the adjustment contents information to the host computer.

Memory system, computer system, and information protection method

In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer ( ) of a single-crystalline Si substrate ( ) whose (100) plane is upwardly directed is irradiated with Ne atom currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer ( ) is converted to such orientation that the (111) plane is upwardly directed. A masking member ( ) is employed as a shielding member to anisotropically etch the substrate ( ) from its bottom surface, thereby forming a V-shaped groove ( ). At this time, the uppermost layer ( ) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diagram which is made of a single-crystalline material can be easily manufactured through no junction.

Semiconductor device and method of fabricating the same

In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (,) of a single-crystalline Si substrate (,) whose (,) plane is upwardly directed is irradiated with Ne atom currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer (,) is converted to such orientation that the (,) plane is upwardly directed. A masking member (,) is employed as a shielding member to anisotropically etch the substrate (,) from its bottom surface, thereby forming a V-shaped groove (,). At this time, the uppermost layer (,) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diagram which is made of a single-crystalline material can be easily manufactured through no junction.

Semiconductor device having a single crystal gate electrode and insulation

In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (,) of a single-crystalline Si substrate (,) whose (,) plane is upwardly directed is irradiated with Ne atoms currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer (,) is converted to such orientation that the (,) plane is upwardly directed. A masking member (,) is employed as a shielding member to anistropically etch the substrate (,) from its bottom surface, thereby forming a V-shaped groove (,). At this time, the uppermost layer (,) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diagram which is made of a single-crystalline material can be easily manufactured through no junction.

Field-effect thin-film transistor device

In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (1104) of a single-crystalline Si substrate (1102) whose (100) plane is upwardly directed is irradiated with Ne atom currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer (1104) is converted to such orientation that the (111) plane is upwardly directed. A masking member (106) is employed as a shielding member to anisotropically etch the substrate (1102) from its bottom surface, thereby forming a V-shaped groove (1112). At this time, the uppermost layer (1104) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diagram which is made of a single-crystalline material can be easily manufactured through no junction.

In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (1104) of a single-crystalline Si substrate (1102) whose (100) plane is upwardly directed is irradiated with Ne atom currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer (1104) is converted to such orientation that the (111) plane is upwardly directed. A masking member (106) is employed as a shielding member to anisotropically etch the substrate (1102) from its bottom surface, thereby forming a V-shaped groove (1112). At this time, the uppermost layer (1104) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diaphragm which is made of a single-crystalline material can be easily manufactured through no junction.

Micromachine manufacture using gas beam crystallization

In order to form a single-crystalline thin film on a polycrystalline substrate using plasma CVD, a downwardly directed mainly neutral Ne atom current is formed by an ECR ion generator (2). A reaction gas such as silane gas which is supplied from a reaction gas inlet pipe (13) is sprayed onto an SiO.sub.2 substrate (11) by an action of the Ne atom current, so that an amorphous Si thin film is grown on the substrate (11) by a plasma CVD reaction. At the same time, a part of the Ne atom current having high directivity is directly incident upon the substrate (11), while another part thereof is incident upon the substrate (11) after its course is bent by a reflector (12). The reflector (12) is so set that all directions of the parts of the Ne atom current which are incident upon the substrate (11) are perpendicular to densest planes of single-crystalline Si. Therefore, the as-grown amorphous Si is sequentially converted to a single-crystalline Si thin film having crystal axes which are so regulated that the densest planes are oriented perpendicularly to the respective directions of incidence, by an action of the law of Bravais. Thus, a single-crystalline thin film is formed on a polycrystalline substrate.

Apparatus for forming single-crystalline thin film by beam irradiator

Method of forming single-crystalline thin film using beam irradiating

Method of and apparatus for forming single-crystalline thin film, beam

Method of forming single-crystalline thin film by beam irradiator

In order to form a single-crystalline thin film on a polycrystalline substrate using plasma CVD, a downwardly directed mainly neutral Ne atom current is formed by an ECR ion generator (2). A reaction gas such as silane gas which is supplied from a reaction gas inlet pipe (13) is sprayed onto an SiO.sub.2 substrate (11) by an action of the Ne atom current, so that an amorphous Si thin film is grown on the substrate (11) by a plasma CVD reaction. At the same time, a part of the Ne atom current having high directivity is directly incident upon the substrate (11), while another part thereof is incident upon the substrate (11) after its course is bent by a reflector (12). The reflector (12) is so set that all directions of the parts of the Ne atom current which are incident upon the substrate (11) are perpendicular to densest planes of single-crystalline Si. Therefore, the as-grown amorphous Si is sequentially converted to a single-crystalline Si thin film having crystal axes which are so regulated that the densest planes are oriented perpendicularly to the respective directions of incidence, by an action of the law of Bravais. Thus, a single-crystalline thin film is formed on a polycrystalline substrate. (FIG. 13)

Photovoltaic device

The hardware-implemented rule-based expert system of this invention is suitable for performing high speed inferencing in artificial intelligence (AI) applications, and is characterized by being domain independent so that it can be applied to a variety of different application domains. The expert system includes a working memory in which, at the beginning of an inferencing operation, is stored known information or facts pertaining to the application domain. Additionally, a rule memory is provided for storing a rule set for the application domain. The rule set is comprised of a series of instructions, each defining a condition or an action. Instructions are successively loaded from the rule memory into via a first data bus. The logic unit successively executes the instructions in working memory with reference to the stored facts in working memory to thereby deduce new facts. The logic unit is coupled to working memory via a second data bus. During the inferencing operation, as new facts are deduced, they are stored in working memory and may be used for the execution of subsequent instructions. Upon the completion of the inferencing operation, an input/output interface transfers the facts stored in working memory to an output device.

VLSI hardware implemented rule-based expert system apparatus and method

A computer-aided system and method is disclosed for designing an application specific integrated circuit (ASIC) whose intended function is implemented both by a hardware subsystem including hardware elements on the integrated circuit and by a software subsystem including a general purpose microprocessor also on the integrated circuit. The system also generates software instructions for use by the software subsystem. The system utilizes a knowledge based expert system, with a knowledge base extracted from expert ASIC designers, and thus makes it possible for ASIC's to be designed and provided quickly and economically by persons not having the highly specialized skill of an ASIC designer.

Integrated silicon-software compiler

Growing community of inventors

Toyonaka, Japan

Masahiro Shindo