Toshiba Memory Corporation

Tokyo Shibaura Denki Kabushiki Kaisha

Kioxia Corporation

Toshiba Corporation

Masahiro Shimura

Mitsuhiro Noguchi

Sakae Kimura

Hideharu Nihei

Kenji Enokida

Tadatake Okai

A semiconductor device according to embodiments includes: a first conductivity-type first semiconductor layer set to a first potential; a second conductivity-type second semiconductor layer stacked on the first semiconductor layer and set to a second potential; an interlayer insulating film disposed on a main surface of the second semiconductor layer; a resistor disposed above the first semiconductor layer while interposing the second semiconductor layer and the interlayer insulating film therebetween; and a terminal electrically connected to the second semiconductor layer.

Semiconductor device

A getter device is disclosed in which at least on the exposed surface of a getter material filled in a metal getter container and containing a barium-aluminum alloy powder and a nickel powder is formed a gas-impermeable film of a boron compound or a mixture of a boron compound with silicon oxide.

Getter device

A sintered electrode in a discharge tube comprises a sintered compact body and a cesium compound layer deposited on the sintered compact body. The sintered compact body comprises a gas getter such as titanium in the range of 5 to 50% by weight of the body, an additive for sintering such as silicon oxide in the range 0.1 to 1.0% by weight of the body and the remainder formed by a high melting point metal such as tantalum.

Sintered electrode in a discharge tube

Growing community of inventors

Yokohama, Japan

Masahiro Shimura