Kabushiki Kaisha Toshiba

Masahiro Sekiguchi

Kazumasa Tanida

Mie Matsuo

Masayuki Dohi

Susumu Harada

Kenji Takahashi

Atsuko Kawasaki

Kenichiro Hagiwara

Chiaki Takubo

Ikuko Inoue

Kazutaka Akiyama

Eiji Takano

Tatsuhiko Shirakawa

Hitoshi Sugiyama

Hideo Numata

Naoko Yamaguchi

Itsuko Sakai

Atsuko Yamashita

Tsuyoshi Matsumura

Ninao Sato

Takashi Shirono

Satoshi Hongo

Akihiro Hori

Mari Otsuka

Masayuki Ayabe

Takuto Inoue

Yoshiteru Koseki

Kazuhiko Nakadate

Koushi Tozuka

Hiroki Neko

According to an embodiment, an active layer is formed on a first surface of a semiconductor substrate, a wiring layer is formed on the active layer, and an insulating layer is formed covering the wiring layer. The first surface of the semiconductor substrate is bonded to a support substrate via the insulating layer, and the semiconductor substrate bonded to the support substrate is thinned leaving the semiconductor substrate having a predetermined thickness which covers the active layer from a second surface. At least a part of area of the thinned semiconductor substrate is removed to expose the active layer.

Manufacturing method of semiconductor device, semiconductor substrate, and camera module

According to one embodiment, a manufacturing method of a semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate having first and second main surfaces, and a through hole passing through between the first and second main surfaces, a pad on the first main surface, a through electrode in the through hole, and a connection structure including a connection portion to directly connect the pad and the through electrode, and another connection portion to indirectly connect the pad and the through electrode. The method includes forming an isolation region in the first main surface, the isolation region being in a region where the through electrode is to be formed and being in a region other than the region where the through hole is to be formed, forming the pad, and forming the through hole by processing the substrate to expose a part of the pad.

Semiconductor device and manufacturing method thereof

A method for manufacturing a semiconductor device, includes: preparing a semiconductor substrate with a first notch; preparing a supporting substrate with a second notch; laminating the semiconductor substrate with the supporting substrate so that the first notch can be matched with the second notch; and processing a second main surface of the semiconductor substrate opposite to a first main surface thereof facing to the supporting substrate to reduce a thickness of the semiconductor substrate to a predetermined thickness.

Method for manufacturing a semiconductor device, method for detecting a semiconductor substrate and semiconductor chip package

A semiconductor devicehas a through holeformed in a second substrate. On the front surface of the semiconductor substrate, a first insulating layeris coated having an openingof the same diameter as that of the through hole, and a first wiring layeris formed on the first insulating layer. Further, near the first wiring layer, the through holeand a through connection portion constituted of a third insulating layerformed on the inner surface and the like and a third wiring layerfilled and formed in the through holeare formed. In addition, a second wiring layerinternally contacting the through connection portion is electrically connected with the first wiring layer. Between the inner surface of the through holeand the first wiring layer, a second insulating layerintervenes so that the first wiring layeris separated from the third wiring layerfilled and formed in the through hole

Semiconductor device and method of manufacturing semiconductor device

Semiconductor device includes semiconductor substrate, through hole having first opening and second opening, and including an expansion portion so that an opening area of first opening is greater than an opening area of lowermost portion of expansion portion, first insulating layer, and having an opening which communicates with through hole and has an area smaller than opening area of first opening, first wiring layer provided on first insulating layer, second insulating layer provided on expansion portion of through hole, and to cover first opening and an inner wall surface of through hole, second insulating layer having an opening communicating with opening of first insulating layer so as to expose first wiring layer through opening of first insulating layer, and second wiring layer provided on second insulating layer to extend from inside of through hole, and being connected to first wiring layer via openings of first and second insulating layers.

Semiconductor device, through hole having expansion portion and thin insulating film

A semiconductor package includes a solid-state imaging element, electrode pad, through-hole electrode, and light-transmitting substrate. The solid-state imaging element is formed on the first main surface of a semiconductor substrate. The electrode pad is formed on the first main surface of the semiconductor substrate. The through-hole electrode is formed to extend through the semiconductor substrate between the first main surface and a second main surface opposite to the electrode pad formed on the first main surface. The light-transmitting substrate is placed on a patterned adhesive to form a hollow on the solid-state imaging element. The thickness of the semiconductor substrate below the hollow when viewed from the light-transmitting substrate is larger than that of the semiconductor substrate below the adhesive.

Semiconductor package and camera module

A semiconductor device includes a semiconductor substrate having a first surface in which a light-receiving portion and electrodes are provided. The semiconductor substrate has a penetrating wiring layer connecting the first surface and the second surface. A light-transmissive protective member is disposed on the semiconductor substrate so as to cover the first surface. A gap is provided between the semiconductor substrate and the light-transmissive protective member. A protective film is formed at a surface of the light-transmissive protective member. The protective film has an opening provided at a region corresponding to the light-receiving portion.

Semiconductor device and method of manufacturing the same

Method for manufacturing a semiconductor device

A semiconductor device includes a semiconductor substrate having a through hole. An active layer is formed on a first surface of the semiconductor substrate. An inner wall surface of the through hole, a bottom surface of the through hole closed by the active layer and a second surface of the semiconductor substrate are covered with an insulating layer. A first opening is formed in the insulating layer which is present on the bottom surface of the through hole. A second opening is formed in the insulating layer which is present on the second surface of the semiconductor substrate. A first wiring layer is formed from within the through hole onto the second surface of the semiconductor substrate. A second wiring layer is formed to connect to the second surface through the second opening.

Semiconductor device and producing method of the same

A solid state imaging device includes: an imaging device substrate with an imaging device section formed on a first major surface side thereof; a backside interconnect electrode provided on a second major surface side of the imaging device substrate and electrically connected to the imaging device section, the second major surface being on the opposite side of the first major surface; a circuit substrate provided with a circuit substrate electrode opposed to the second major surface; a connecting portion electrically connecting the backside interconnect electrode to the circuit substrate electrode; and a light shielding layer provided coplanar with the backside interconnect electrode or on the circuit substrate side of the backside interconnect electrode.

Solid state imaging device and method for manufacturing same, and solid state imaging module

An imaging element is formed on the first main surface of a semiconductor substrate. An external terminal is formed on the second main surface of the semiconductor substrate. A through-hole electrode is formed in a through hole formed in the semiconductor substrate. A first electrode pad is formed on the through-hole electrode in the first main surface. An interlayer insulating film is formed on the first electrode pad and on the first main surface. A second electrode pad is formed on the interlayer insulating film. A passivation film is formed on the second electrode pad and the interlayer insulating film, and has an opening which exposes a portion of the second electrode pad. A contact plug is formed between the first and second electrode pads in a region which does not overlap the opening when viewed in a direction perpendicular to the surface of the semiconductor substrate.

Semiconductor package including through-hole electrode and light-transmitting substrate

Growing community of inventors

Yokohama, Japan

Masahiro Sekiguchi