Kabushiki Kaisha Toshiba

Masahiro Seiki

Atsushi Sugahara

Ryoichi Watanabe

Makoto Shibusawa

Akira Kubo

Osamu Shimada

Katsuhiko Inada

Ryuji Tada

Akimasa Toyama

Yasunori Miura

Ikuo Matsunaga

A first signal line and a second signal line are paired, and in one signal line selection period, CPU of the inspection circuit controls a write circuit and writes analog signals into the first signal line selected by means of a switch of the selection circuit. In the next signal line selection period, CPU controls a read circuit and reads output signals from the second signal line selected by means of the switch. CPU detects a short circuit between the paired signal lines based upon the output signals from the second signal line.

Electronic inspection of an array

There is provided a liquid crystal display wherein a first display region corresponding to a first area on which first pixel electrodes are provided displays an image by light reflection mode, and a second display region corresponding to a second area on which second pixel electrodes are provided can display an image by light transmission mode.

Liquid crystal display with display regions of light reflection mode and light transmission mode

Transflective liquid crystal display

An array substrate of a liquid crystal display device has a glass substrate on which gate lines, signal lines, pixel electrodes, and thin-film transistors are arranged. Each of the thin-film transistors includes a gate electrode composed of a part of one of the gate lines and including a first conductive layer formed on the glass substrate and a second conductive layer covering the first conductive layer. A gate insulating film is formed on the glass substrate and covers the gate electrode. A thin non-single-crystal silicon film is disposed on the gate insulating film on the gate electrode and includes a channel region. Source and drain electrodes are connected electrically to the thin non-single-crystal silicon film. The first conductive layer has two opposite side edge portions extending inclined at an angle to the surface of the substrate, the inclination angle of each side edge portion is ranges from 10&deg; to 30&deg;, so that the thin non-single-crystal silicon film has a continuous interface without bends, situated on the side of the gate insulating film in the channel region.

Method of manufacturing thin-film transistors

In a thin-film transistor 171, in order to sufficiently suppress an optical leakage current Ioff, thereby achieving a high ON/OFF current ratio, at least one of shortest distances between an arbitrary intersection of an outline of a gate electrode 131 and an outline of a drain electrode 141 and an intersection of the outline of the gate electrode 131 and an outline of a source electrode 151 is formed to be larger than the shortest distance between a portion of the outline of the gate electrode 131 overlapping the drain electrode 141 and another portion thereof overlapping the source electrode 151.

Thin-film transistor and display device using the same

An array substrate of a liquid crystal display device has a glass substrate on which gate lines, signal lines, pixel electrodes, and thin-film transistors are arranged. Each of the thin-film transistors includes a gate electrode composed of a part of one of the gate lines and including a first conductive layer formed on the glass substrate and a second conductive layer covering the first conductive layer. A gate insulating film is formed on the glass substrate and covers the gate electrode. A thin non-single-crystal silicon film is disposed on the gate insulating film on the gate electrode and includes a channel region. Source and drain electrodes are connected electrically to the thin non-single-crystal silicon film. The first conductive layer has two opposite side edge portions extending inclined at an angle to the surface of the substrate, the inclination angle of each side edge portion is ranges from 10.degree. to 30.degree., so that the thin non-single-crystal silicon film has a continuous interface without bends, situated on the side of the gate insulating film in the channel region.

Thin-film transistor with edge inclined gates and liquid crystal display

An object of the technology of our invention is to solve a luminance defect viewed as a 'seam' or the like and to provide a liquid crystal display device having a screen for equally displaying an image. For example, when an exposing process is performed for one conductor layer or a dielectric layer, a total of four photomasks are used corresponding to four shot areas. A light insulation layer of a photomask used for the exposing process for patterning for example a signal line is formed so that it becomes a projection pattern of the signal line. The photomasks corresponding to adjacent shot areas are formed so that patterns of the light insulation layers of the boundary portion are engaged with each other on the plane.

Growing community of inventors

Fukaya, Japan

Masahiro Seiki