Kabushiki Kaisha Toshiba

Matsushita Electric Industrial Co., Ltd.

Stanley Electric Co., Ltd

Nippon Metal Industry Co., Ltd.

Makino J Co., Ltd.

Optoelectronics Technology Research Corporation

Masahiro Sasaki

Yoshito Kawakyu

Masao Mashita

Hideyuki Kamiyama

Yoji Oki

Hiroshi Arai

Youji Oki

Noboru Murakami

Takudai Maenosono

Yasuhiko Nomura

Shigeo Goto

Yoshitaka Morishita

Seiichi Takeda

Kazuhisa Yokoyama

Sachiyo Otsuka

Tsuyoshi Kuwano

Yasuhiro Tsuchie

Seikoh Yoshida

A conveyance device () comprises: a carriage (); a support column (); a lifting device () that moves in the vertical direction along the support column (); and a load platform () that is moved in the vertical direction by the lifting device (). The lifting device () includes an upper guide (), a lower guide (), and a linking member () for linking an upper member () and a lower member () together. The upper guide () includes: a first wheel () that rolls on a rear surface () of the support column (); and the upper member () which supports the first wheel (). The lower guide () includes: a second wheel () that rolls on a front surface () of the support column (); and the lower member () which supports the second wheel (), the lower guide being disposed below the upper guide (). The load platform () is disposed in front of the second wheel (), and is linked to front side and rear side portions of the linking member ().

Conveyance device

A GPS receiver for shortening the time for locking onto a satellite includes a detector having an oscillator and plural reception channels, a navigational-message-receiver for analysing the message demodulated at the detector from a signal transmitted by a GPS satellite, a position-determiner for acquiring information of the receiver's position, a satellite-selector for selecting a receivable GPS satellite, a stationary-satellite-receiver for receiving a signal from a stationary satellite and measuring an offset frequency of the oscillator. The satellite selector sets a scanning range on a center frequency for each channel, the scanning range being formed by adding the Doppler-shift frequency to the offset frequency of the oscillator, the offset frequency being measured by the stationary-satellite-receiver. The stationary-satellite-receiver always receives signals from the stationary satellite to measure the offset frequency of the oscillator while a main power source is turned off. Therefore, the satellite selector immediately sets a correct frequency scanning range for the satellites upon turning on the main power source, thereby shortening the time for locking onto the satellite.

GPS receiver

A plurality of documents and a plurality of types of classifications are registered on a plurality of hierarchy stages of a hierarchy structure. In each of the documents, a plurality of document files indicating contents of the document is stored in a contents file block, and document attribute information designating one or more document attributes peculiar to the document is stored in a document attribute information file. In each of the types of classifications, classification attribute information designating one or more classification attributes of the type of classification is stored in a classification attribute information file. The classification attributes have no connection with contents of any document. In the hierarchical structure, one or more documents and types of classifications characterized by a common attribute are registered on a first hierarchy stage on the basis of the classification attribute information, which designates the common attribute and is stored in one classification attribute information file of one type of classification registered on a second hierarchy stage higher than the first hierarchy stage by one hierarchy stage, for each hierarchy stage. Therefore, each document can be logically registered, preserved, retrieved and renewed at high speed while tracing a plurality of types of classifications one after another in the hierarchical structure.

Electronic document filing system for registering and retrieving a

In a method of selectively growing a crystal of a compound semiconductor layer which is composed of gallium and arsenic, a selective growth is selectively carried out on a substrate by using a combination of metallic gallium and a reactive gas, such as trisdimethylminoarsine, which includes a metallic compound of arsenic specified by at least one amine. The combination may includes organometallic gallium, such as trimethylgallium, triethylgallium instead of the metallic gallium. Such a combination serves to selectively deposit the compound semiconductor layer only on an exposed portion uncovered with a mask. Any other compound semiconductor layer may be selectively deposited on the exposed portion. The exposed portion may be composed of GaAs, AlGaAs, or InGaAs.

Method of growing a crystal of a compound semiconductor at a low

Disclosed is a method of selective chemical vapor deposition for selectively forming thin films of a semiconductor, dielectric or metal on a semiconductor by providing a mask of SiO.sub.2 having a plurality of openings in various forms on the substrate, wherein a trimethyl gallium (TMG) gas as a Group III material, 10% hydrogen-based arsine (AsH.sub.3) gas as a Group V material, and 500 ppm hydrogen-based disilane (Si.sub.2 H.sub.6) gas as an n-type impurity material are alternately supplied onto the substrate, and each supply amount of the material gases is controlled at a value to obtain a film growth rate for forming the corresponding monoatomic layer or monomolecular layer to each material at each opening. Also disclosed is an apparatus for performing the above-disclosed method of chemical vapor deposition, wherein four reaction chambers are included, and the material gases are supplied to the respective reaction chambers in accordance with the following gas supply sequences: Chamber 1: TMG+H.sub.2 /H.sub.2 (for gas replacement)/AsH.sub.3 +H.sub.2 /H.sub.2 (for gas replacement); Chamber 2: H.sub.2 (for gas replacement)/AsH.sub.3 +H.sub.2 /H.sub.2 (for gas replacement)/TMG+H.sub.2 ; Chamber 3: AsH.sub.3 +H.sub.2 /H.sub.2 (for gas replacement)/TMG+H.sub.2 /H.sub.2 (for gas replacement); Chamber 4: H.sub.2 (for gas replacement)/TMG+H.sub.2 /H.sub.2 (for gas replacement)/AsH.sub.3 +H.sub.2.

Method for producing compound semiconductors and apparatus therefor

A vapor-phase epitaxial growth method for group III-V compound semiconductor crystal layers by which alternating layers of (InAs)1 and (GaAs)1 are grown on an InP substrate by means of vapor-phase epitaxy while different material gases are supplied alternately. The substrate is irradiated with excimer laser light when a specific layer of the crystal layers is grown, thereby controlling the thickness of the specific crystal layer on a monoatomic scale.

Vapor-phase epitaxial growth method for semiconductor crystal layers

In the revolution frequency indication apparatus in which the revolution frequency of a rotating body is measured and indicated according to a sensor pulse obtained from a revolution sensor mounted on said rotating body or its surrounding, a revolution frequency indication apparatus comprising an indication updating time counter circuit which counts predetermined indication updating time intervals, and a revolution frequency measurement portion which measures the revolution frequency of said rotating body by means of a sensor pulse entered within a measurement time interval of said counter circuit.

Engine speed measuring device with plural counters for averaging angular

A circuit system for preventing a measuring device such as an engine speed measuring device or the like from being erroneously operated includes as essential components a filter circuit, a Schmitt trigger circuit, an oscillating circuit, a counting circuit, a pulse monitoring circuit and an adding circuit. A combination of the filter circuit and the Schmitt trigger circuit serve to properly shape a wave form of each of a series of pulse-shaped sensor detection signals. The oscillating circuit generates a series of pulses each having a reference frequency. The pulse monitoring circuit monitors a wave-form shaping output pulse by counting the number of a series of output pulses each having a reference frequency for a predetermined period of time with the edge of the wave-form shaping output pulse as a trigger. In addition, the pulse monitoring circuit serves to discriminate whether a bound is caused in the wave-form shaping output signal or not and then deliver a processing signal to a processing circuit at the next stage. The circuit system has a diverging point which is located between the Schmitt circuit and the counting circuit so that a series of pulse-shaped sensor detecting signals are transmitted to the pulse monitoring circuit via the diverging point.

Circuit system for preventing measuring device from being erroneously

The present invention provides a process for producing a clad plate which comprises a first step of forming a coil by taking up two or more metal sheets as clad materials and a thin sheet of heat-resistant steel which works as a separator material while these members are overlaid on one another and a second step of vacuum heat-treating the resultant coil.

Growing community of inventors

Kanagawa, Japan

Masahiro Sasaki