Rohm Co., Ltd.

Masahiro Sakuragi

Goro Nakatani

Takeshi Yoshida

Nobuyuki Yamada

Kei Hayashi

Koichi Niino

Mizuho Okada

Toma Fujita

Masahiko Sonoda

A MEMS sensor includes a silicon substrate that has a first surface and a second surface on a side opposite to the first surface and that has a cavity in the first surface, a silicon diaphragm that has a first surface and a second surface on aside opposite to the first surface and in which the second surface is joined directly to the first surface of the silicon substrate, and a piezoresistance formed at the first surface of the silicon diaphragm, and, in the MEMS sensor, a plane orientation of the first surface of the silicon substrate and a plane orientation of the first surface of the silicon diaphragm differ from each other.

MEMS sensor

A method for manufacturing a MEMS device includes a hole forming step of forming a plurality of holes concaved from a principal surface in a substrate material including a semiconductor, a connecting-hollow-portion forming step of forming a connecting hollow portion that connects the plurality of holes together, and a movable-portion forming step of, by partially moving the semiconductor of the substrate material so as to close at least one part of the plurality of holes, forming a hollow portion that exists inside the substrate material and a movable portion that coincides with the hollow portion when viewed in a thickness direction of the substrate material.

MEMS-device manufacturing method, MEMS device, and MEMS module

An electronic part (air pressure detecting device)includes a sensor element (air pressure sensor element)that includes an ambient air contacting surface S including an ambient air contacting region Sa to be exposed to ambient air, and a supporting substrate, arranged to support the sensor element. The sensor elementis bonded to one surfaceof the supporting substratein a state where its ambient air contacting surface S faces the one surfaceof the supporting substrateand a gap, through which the ambient air flows, is formed between the ambient air contacting surface S and the one surfaceof the supporting substrate

Electronic part with sensor exposed to ambient air

A semiconductor pressure sensor () includes a thin film piezoelectric element () which applies strain to a portion of a semiconductor substrate that corresponds to a thin region (). The thin film piezoelectric element () is formed at a distance away from diffusion resistors (, and) functioning as strain gauges and is extended to the proximity of a bonding pad (A) connected to an upper electrode layer of the thin film piezoelectric element and a bonding pad (F) connected to a lower electrode thereof. The diffusion resistors (, and) constitute a bridge circuit by metal wiring () and diffusion wiring (). During self-diagnosis, a prescribed voltage is applied to a thin film piezoelectric element (). If the output difference of the bridge circuit between before and after the voltage application falls outside a prescribed range, it is determined that a breakage occurs in the semiconductor pressure sensor ().

Semiconductor pressure sensor, pressure sensor apparatus, electronic equipment, and method of manufacturing semiconductor pressure sensor

A probe card includes a board or silicon substrate; a plurality of probes (terminals) at a first surface of the board, the respective probes having a first extending portion extending along the first surface of the board; a plurality of through-holes formed in correspondence to the respective probes and penetrating between the first and second surfaces of the board; through electrodes embedded in the respective through-holes and conductively connected to the probes in the respective through-holes; and a wiring at the second surface of the board conductively connected to the through electrodes, the wiring having a second extending portion extending along the second surface of the board, wherein the first extending portion and the second extending portion extend in different directions from each other, and a space is formed across the entire width of the first extending portion between the first extending portion and the first surface of the board.

Probe card

Provided is a method for manufacturing a probe card which inspects electrical characteristics of a plurality of semiconductor devices in batch. The method includes: a step of forming a plurality of probes, which are to be brought into contact with external terminals of the semiconductor devices, on one side of a board which forms the base body of the probe card; a step of forming on the board, by photolithography and etching, a plurality of through-holes which reach the probes from the other side of the board; a step of forming, in the through-holes, through electrodes to be conductively connected with the probes, respectively; and a step of forming wiring, which is conductively connected with the through electrodes, on the other side of the board.

Method for manufacturing probe card, probe card, method for manufacturing semiconductor device, and method for forming probe

[Subject] To provide a pressure sensor capable of implementing cost reduction and miniaturization. [Solving Means] A pressure sensorincludes a silicon substrateprovided therein with a reference pressure chamber, a diaphragm, consisting of part of the silicon substrate, formed on a surface layer portion of the silicon substrateto partition a reference pressure chamber, and an etching stop layerformed on a lower surface of the diaphragmfacing the reference pressure chamber. A through-holecommunicating with the reference pressure chamberis formed on the diaphragm, and a filleris arranged in the through-hole

Pressure sensor and method for manufacturing pressure sensor

AMOS transistor comprises: a first conduction type region; a second conduction type drain region formed on the outermost layer portion of the first conduction type region; a second conduction type source region formed on the outermost layer portion of the first conduction type region with a channel region provided between the second conduction type drain region and the second conduction type source region; agate electrode formed on the channel region; a second conduction type base region formed inside of the second conduction type drain region in plan elevation; a plurality of first conduction type emitter regions formed in the second conduction type base region on the outermost layer portion thereof at spatial intervals in a predetermined direction; and a drain contact connected to, as lying astride, adjacent two first conduction type emitter regions and that portion of the second conduction type drain region between these adjacent two first conduction type emitter regions.

Vertical transistor and a semiconductor integrated circuit apparatus having the same

A bipolar transistor is provided, which is low in collector-to-emitter saturation voltage, small in size and to be manufactured by a reduced number of processes, and a semiconductor device formed with such a bipolar transistor and a MOS transistor on a same substrate. A high concentration region for reducing the collector-to-emitter saturation voltage VCE(sat) is formed in a manner surrounding a base region of an NPN transistor. This high concentration region is not necessarily formed in such a depth as reaching a buried layer, and can be reduced in the spread in a lateral direction. Because a high concentration region can be formed in a same process as upon forming source and drain regions for an NMOS transistor to be formed together with an NPN transistor on a same silicon substrate, it is possible to omit a diffusion process exclusive for forming a high concentration region and hence to manufacture a semiconductor device through a reduced number of processes.

Growing community of inventors

Kyoto, Japan

Masahiro Sakuragi