Hoya Corporation

Japan Science and Technology Agency

Japan Science and Technology Corporation

Masahiro Orita

Hiroyuki Sakai

Hideo Hosono

Megumi Takeuchi

Hiromichi Ota

Hiroaki Tanji

Hiroshi Kawazoe

Masahiro Hirano

Hiroaki Yanagita

Kazushige Ueda

Satoshi Kobayashi

Toshio Kamiya

Hidenori Hiramatsu

Yuki Tani

Kenichi Kawamura

Hiromichi Ohta

Misaki Hatsuda

Nobuhiko Sarukura

Takashi Narushima

Msahiro Hirano

Morihiro Niimi

Hiroaki Yanagida

Toshio Room 207 Monarch Mizonokuchi Iii Kamiya

To provide a p-type semiconductor material having a band matching with a hole injection layer and suitable for an anode electrode that can be formed on a glass substrate or a polymer substrate, and to provide a semiconductor device. In the p-type semiconductor material, 1&#xd7;10to 5&#xd7;10cmof Ag is contained in a compound containing Zn and Se, and the semiconductor device includes a substrate and a p-type electrode layer arranged on this substrate and having the aforementioned p-type semiconductor material.

P-type semiconductor material, semiconductor device, organic electroluminescent device, and method for manufacturing P-type semiconductor material

A light emitting device having practical light emission characteristics is obtained without epitaxial growth. A quantum dot-dispersed light emitting device of the invention includes a substrate, an electron injection electrode, a hole injection electrode, and an inorganic light emitting layerdisposed so as to be in contact with both the electrodes. The inorganic light emitting layercontains an ambipolar inorganic semiconductor material and nanocrystalsdispersed as luminescent centers in the ambipolar inorganic semiconductor material and is configured so as to be capable of light emission without having, at the interface with the electron injection electrode and/or the hole injection electrode, epitaxial relation therewith.

Quantum dot-dispersed light emitting device, and manufacturing method thereof

It is an object to provide a p-type ZnS based semiconductor material having a low resistance which can easily form an ohmic contact to a metallic material. Moreover, the invention provides a semiconductor device and a semiconductor light emitting device which include an electrode having a low resistance on a substrate other than a single crystal substrate, for example, a glass substrate. The semiconductor material according to the invention is used as a hole injecting electrode layer of a light emitting device and has a transparent property in a visible region which is expressed in a composition formula of ZnCuMgCdSSeTe(0.004&#x2266;&#x3b1;&#x2266;0.4, &#x3b2;&#x2266;0.2, &#x3b3;&#x2266;0.2, 0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;0.2, and x+y&#x2266;1).

P-type ZnS based semiconductor material having a low resistance due to its high copper content

As a p-type ohmic contact electrode formation technique in a Group II-VI compound semiconductor, there is provided a material for forming an electrode that is low in resistance, stable, and not toxic, and is excellent in productivity, thereby providing an excellent semiconductor element. A semiconductor electrode material in the form of a material represented by a composition formula AxByCz where A: at least one element selected from Group 1B metal elements, B: at least one element selected from Group 8 metal elements, C: at least one element selected from S and Se), where X, Y, and Z are such that X+Y+Z=1, 0.20&#x2dc;X&#x2dc;0.35, 0.17&#x2dc;Y&#x2dc;0.30, and 0.45&#x2dc;Z&#x2dc;0.55.

Electrode material and semiconductor element

Disclosed is a method of producing an LnCuOX single-crystal thin film (wherein Ln is at least one selected from the group consisting of lanthanide elements and yttrium, and X is at least one selected from the group consisting of S, Se and Te), which comprises the steps of growing a base thin film on a single-crystal substrate, depositing an amorphous or polycrystalline LnCuOX thin film on the base thin film to form a laminated film, and then annealing the laminated film at a high temperature of 500&#xb0; C. or more. While a conventional LnCuOX film produced by growing an amorphous film through a sputtering process under appropriate conditions and then annealing the film at a high temperature was unexceptionally a polycrystalline substance incapable of achieving high emission efficiency and electron mobility required for a material of light-emitting devices or electronic devices, the method of the present invention can grow a thin film with excellent crystallinity suitable as a single crystal to an building black of light-emitting diodes, semiconductor leasers, filed-effect transistors, or a hetero-bipolar transistors.

LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film

Disclosed is a natural-superlattice homologous single-crystal thin film, which includes a complex oxide which is epitaxially grown on either one of a ZnO epitaxial thin film formed on a single-crystal substrate, the single-crystal substrate after disappearance of the ZnO epitaxial thin film and a ZnO single crystal. The complex oxide is expressed by the formula: MMO(ZnO), wherein Mis at least one selected from the group consisting of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y, Mis at least one selected from the group consisting of Mn, Fe, Ga, In and Al, and m is a natural number of 1 or more. A natural-superlattice homologous single-crystal thin film formed by depositing the complex oxide and subjecting the obtained layered film to a thermal anneal treatment can be used in optimal devices, electronic devices and X-ray optical devices.

Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film

The present invention provides an ultraviolet-transparent conductive film comprising a GaOcrystal. The film has a transparency in the wavelength range of 240 to 800 nm, or 240 to 400 nm, and an electric conductivity induced by an oxygen deficiency or dopant in the GaOcrystal. The dopant includes at least one element selected from the group consisting of the Sn, Ge, Si, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W. The ultraviolet-transparent conductive film is formed through either one of a pulsed-laser deposition method, sputtering method, CVD method and MBE method, under the conditions with a substrate temperature of 600 to 1500&#xb0; C. and an oxygen partial pressure of 0 to 1 Pa.

Ultraviolet-transparent conductive film and process for producing the same

A low-resistance ITO thin film having a resistivity on the order of, or lower than 10 &OHgr;cm, and a method for manufacturing such a film are disclosed. The ITO thin film is manufactured by depositing ITO on a crystalline substrate by pulsed laser deposition, low-voltage sputtering, oxygen cluster beam deposition, chemical vapor deposition, metal organic chemical vapor deposition, metal organic chemical vapor deposition&mdash;atomic layer deposition, or molecule beam epitaxy.

Low-resistance ITO thin film and method for manufacturing such a film

An ultraviolet-light-emitting semiconductor diode comprising an n-type ZnO layer with luminous characteristics formed on a transparent substrate, and a p-type semiconductor layer selected from the group consisting of SrCu O , CuAlO and CuGaO , which is formed on the n-type ZnO layer to provide a p-n junction therebetween. The transparent substrate is preferably a single crystal substrate having atomically flat yttria-stabilized zirconia (YSZ) (III) surface. The n-type ZnO layer is formed on the transparent substrate having a temperature of 200 to 1200&deg; C., and the p-type semiconductor layer selected from the group of SrCu O , CuAlO and CuGaO is formed on the n-type ZnO layer. The n-type ZnO layer may be formed without heating the substrate, and then the surface of the ZnO layer may be irradiated with ultraviolet light to promote crystallization therein.

Light-emitting diode and laser diode having n-type ZnO layer and p-type semiconductor laser

Electro-conductive oxides showing excellent electro-conductivity, electrodes using the electro-conductive oxide and methods for manufacturing the same are described. The electro-conductive oxides are represented by the general formula: M(1).sub.x M(2).sub.y In.sub.z O.sub.(x+3y/2+3z/2)-d. The above electro-conductive oxides show not only excellent electro-conductivity but also excellent transparency all over the visible region and therefore they are particularly useful as, for example, electrodes for liquid crystal displays, EL displays and solar cells, which require light transmission.

Electro-conductive oxides and electrodes using the same

Electro-conductive oxides showing excellent electro-conductivity, electrodes using the electro-conductive oxide and methods for manufacturing the same are described. The electro-conductive oxides are represented by the general formula: M(1).sub.x M(2).sub.y In.sub.z O.sub.(x+3y/2+3s/2)-d. The above electro-conductive oxides show not only excellent electro-conductivity but also excellent transparency all over the visible region and therefore they are particularly useful as, for example, electrodes for liquid crystal displays, EL displays and solar cells, which require light transmission.

Electro-conductive oxide electrodes and devices using the same

Electro-conductive oxides showing excellent electro-conductivity, electrodes using the electro-conductive oxide and methods for manufacturing the same are described. The electro-conductive oxides are represented by the general formula:

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Akishima, Japan

Masahiro Orita