Canon Kabushiki Kaisha

Masahiro Okuda

Akira Shimizu

Akira Asai

Hitoshi Oda

Shigeki Matsutani

Hiroshi Matsuda

Koichi Fukuda

Ryota Sekiguchi

Takeo Ono

Toshiaki Aiba

Kazuhiro Takada

Masanori Mitome

Kazuhito Fujii

Takao Yonehara

Toshihiko Takeda

Hidetoshi Suzuki

Ichiro Nomura

Tatsuya Iwasaki

Hisaaki Kawade

Atsushi Kandori

Masataka Yashima

Noriyuki Nose

Sotomitsu Ikeda

Yoshiyuki Osada

Nobuo Kushibiki

Aoji Isono

Eiji Yamaguchi

Toshinori Hasegawa

Yasuhiro Hamamoto

Yoshinobu Sekiguchi

Takeshi Baba

Nobutaka Mizuno

Tetsuya Shimada

Katsuhiko Shinjo

Yukihide Ushio

Katsuhiko Nishimura

Hiroaki Toshima

Toshiyuki Nakajima

Noritake Suzuki

Yasuyuki Todokoro

Hiroshi Osawa

Yuichi Handa

Yasuo Tomita

Makoto Koto

Toshihiko Sugimoto

To provide a photoacoustic probe capable of acquiring subject information for reducing generation of artifacts without increasing the number of wires connected to the outside. Provided is a probe including a plurality of ultrasonic transducers, wherein the ultrasonic transducers are divided into a plurality of groups, two adjoining ultrasonic transducers belong to different groups, and the probe includes a group selection unit configured to switch signals of the ultrasonic transducers to be outputtable for each of the groups.

Probe, transducer unit, and subject information acquisition apparatus

A detecting device which detects electromagnetic waves includes an antennal configured to receive electromagnetic waves, and a plurality of semiconductor rectifying devices serially connected to the antenna, and connected in parallel to each other such that the polarity is aligned, so as to receive electromagnetic waves propagated from the antenna, wherein the plurality of semiconductor rectifying devices are each disposed at positions where the phase of electromagnetic waves propagated from the antenna is substantially the same phase.

Detecting device, detector, and imaging apparatus using the same

An oscillation element includes an antenna for oscillation configured to oscillate electromagnetic waves, and multiple negative resistance elements electrically connected to the antenna in parallel, and the multiple negative resistance elements are disposed in only a place where the phases of electromagnetic waves oscillated therefrom are the common phase or opposite phase.

Oscillation element, oscillator, and imaging apparatus using the same

A developer bearing member includes a base body, a surface layer, and a plurality of concave portions provided on the surface layer, wherein a resistance value of the surface layer is 10&#x3a9;&#xb7;cm to 10&#x3a9;&#xb7;cm, the number of the concave portions per unit area is 2250/mmto 12254/mm, a major diameter of an opening of the concave portion is 8 &#x3bc;m to 20 &#x3bc;m, a depth of the concave portion is 2 &#x3bc;m to 5 &#x3bc;m, a dimensional tolerance of the major diameter is 0.5 &#x3bc;m or less, and a dimensional tolerance of the depth is 0.5 &#x3bc;m or less.

Developer bearing member, developing apparatus, and image forming apparatus

Provided is a display apparatus including: a plurality of pixels each having a plurality of light emitting devices each showing different luminescent colors; and a circularly polarizing member placed on a light extraction side of each of the light emitting devices and being across the light emitting devices to be commonly used by the light emitting devices, in which: the circularly polarizing member shows a higher transmittance for a first luminescent color out of the plurality of luminescent colors in a light emitting device showing the first luminescent color than a transmittance for any other color; and a transmittance for the first luminescent color in a light emitting device showing any other luminescent color is lower than the transmittance for the first luminescent color in the light emitting device showing the first luminescent color.

Display apparatus

There is provided a display device which quenches ambient light by using only an optical interference effect without additionally using an optical filter such as a color filter, and can provide good visibility out of doors in the daylight. The display device includes a plurality of organic EL elements each having a light extraction electrode, a reflective electrode, and a plurality of organic compound layers disposed between the electrodes, wherein the plurality of organic EL elements include at least organic EL elements which emit a red light, a green light, and a blue light, respectively; a layer comprised of a material having anomalous dispersion is disposed at a location which is on a light extraction side with respect to the reflective electrode in each of the plurality of organic EL elements; and an ambient light reflectance of the display device shows a minimal in a region of 535 nm or more and 575 nm or less.

Organic EL display device including anomalous dispersion layer

This invention provides a semiconductor film manufacturing method using a new separation technique and applications thereof. The semiconductor film manufacturing method of this invention includes a separation layer forming a step of hetero-epitaxially growing a separation layer () on a seed substrate (), a semiconductor film forming step of forming a semiconductor film () on the separation layer (), and a separation step of separating, by using the separation layer (), the semiconductor film () from a composite member (Ia) formed in the semiconductor film forming step.

Semiconductor film manufacturing method and substrate manufacturing method

An electron-emitting device having an electron-emitting portion between a lower potential side electrode and a higher potential side electrode which are opposite to each other, the electron-emitting device including a field correction electrode disposed adjacent to the lower potential side electrode or the higher potential side electrode and capable of independently supplying a potential.

Electron-emission device and apparatus and image-formation using same

An electron-emitting apparatus is constituted by an electron-emitting device having an electroconductive film including electron-emitting portions, and an electrode for attracting electrons. An electrically insulated elongated region is formed in the electroconductive film to divide the film into a higher potential side and a lower potential side. The insulated region has a substantially periodical shape formed of portions projecting to the higher potential side and portions projecting to the lower potential side. Continuous electron-emitting portions are present at at least part of the portion projecting to the higher potential side in one period of the insulated region.

Electron-emitting apparatus having a periodical electron-emitting region

A semiconductor device in which a current is controlled by light includes a semiconductor member having a source unit and a drain unit and a channel unit through which electrons may flow between the source unit and the drain unit. The channel unit has a quantum well layer having a plurality of quantum energy levels and barrier layers provided adjacent to the well layer. Upon light irradiation of the quantum well layer, electrons make transitions between the different quantum energy levels, and the current flowing between the source unit and the drain unit is controlled by varying the mobility of these transitioned electrons.

Semiconductor device for varying the mobility of electrons by light

A method of manufacturing an electron source having a plurality of surface-conduction electron-emitting devices arranged on a substrate in row and column directions includes the forming of electron emission portions of the plurality of surface-conduction electron-emitting devices. The forming is carried out by supplying current through the plurality of surface-conduction electron-emitting devices upon dividing them into a plurality of groups. An image forming apparatus passes a current through a plurality of electron sources, which are formed on a substrate and arrayed in the form of a matrix, in dependence upon an image signal, and an image is formed by a light emission in response to electrons emitted from the plurality of electron sources.

Method of manufacturing an electron source

Novel electron wave combining and/or branching devices and Aharonov-Bohm type quantum interference devices are proposed, which have no curved electron waveguide structures to form an electron branching or decoupling part or ring geometry. But instead the electron branching part or ring geometry is effectively constructed in a straight double quantum well structures, by the control of the shapes of the wave functions or of the subband energy levels relative to the Fermi level by electric fields.

Electron wave combining/branching devices and quantum interference

An optical semiconductor device with wavelength selectivity comprises a substrate, a collector layer provided on said substrate and composed of a semiconductor having a first conductive type, a multiple quantum well layer provided on said collector layer, a base layer provided on said multiple quantum well layer and composed of a semiconductor having a second conductive type, said base layer consisting of an active layer, and first and second semiconductor layers with said active layer sandwiched therebetween and having a wider band gap than said active layer, said base layer and said multiple quantum well layer propagating light, an emitter layer provided on said base layer and composed of a semiconductor having the first conductive type, and a collector electrode, a base electrode and an emitter electrode electrically connected to said collector layer, base layer and emitter layer, respectively.

Optical semiconductor device with wavelength selectivity and method for

An electron wave is propagated through a plurality of quantum-structure paths of a quantum interference device and is branched into into plural electron waves that are confined in the quantum-structure paths. The electron waves from the quantum-structure paths are combined into a plurality of kinds of different energy level electron waves with varying magnitudes dependent on phase differences between the branched electron waves. The currents of the plurality of kinds of electron waves are detected and a non-fluctuating current is produced from the detected currents. The fluctuation of the electron wave current does not influence the non-fluctuating current and the phase differences among branched electron waves may be modulated by light, an electric field or a magnetic field applied to the branching portion of the device.

Quantum interference devices and methods for processing interference

Growing community of inventors

Sagamihara, Japan

Masahiro Okuda