Hitachi, Ltd.

Pioneer Electronic Corporation

Pioneer Electric Corporation

Kokusai Elect. Co. Ltd.

Masahiro Okamura

Takuzo Ogawa

Tsutomu Yatsuo

Kenji Miyata

Nobutake Konishi

Tatsuya Kamei

Naoto Inaba

Tomoyuki Tanaka

Masuhiro Sato

Yoshio Terasawa

Yoshiyuki Akiba

Masayoshi Naito

Toshiki Nakai

Takeshi Yokota

Tasao Soga

Fumiyuki Kobayashi

Yoshitaka Sugawara

Takaya Suzuki

Susumu Murakami

Saburo Oikawa

Toshikatsu Shirasawa

Sumio Kawakami

Hirobumi Ohuchi

Atsuo Watanabe

Moriaki Fuyama

Takahiro Daikoku

Noboru Akiyama

Masanobu Hanazono

Yutaka Misawa

Naohiro Momma

Hiroaki Hachino

Yasutoshi Kurihara

Osamu Asai

Shinya Iida

Hideyuki Yagi

Yosuke Inoue

Hiroo Tochikubo

Masahiro Gooda

Masato Fujita

Masao Iimura

In an image reproducing apparatus, a music information reproducing unit reproduces musical information, lyrics information or still picture information from a music information recording medium on which the musical information, the lyrics information or the still picture information relating to a plurality of music pieces are recorded, and an image information reproducing unit retrieves moving picture information in a predetermined order in correspondence with respective music pieces in the music information recording medium from an image information recording medium on which moving picture information divided into a plurality of moving picture information segments is recorded, and reproducing said picture information segments.

Image reproducing apparatus, image information recording medium, and

A musical accompaniment playing apparatus comprises a MIDI sound source, a phoneme information memory, a playing information memory, a control means, a mixing means and a sound output means. When a user sings a song with a musical accompaniment and a back chorus, the control means controls the MIDI sound source to output an audio signal in accordance with a phoneme information stored in the phoneme memory and a playing information stored in the playing information memory. The output audio signal is mixed with a singing voice of the user at the mixing means and output from the sound output means as a song in harmony with the back chorus.

Musical accompaniment playing apparatus having phoneme memory for chorus

A user management system is provided for a musical accompaniment playing (KARAOKE) apparatus. The system comprises an individual information recording medium, an input unit, a music information reproducing unit, a control unit and a calculation unit. The input unit is used to input user identification information and music piece selection. The control unit serves to set a musical environment and to record changes in the environment for the user. The calculation unit makes adjustments based on the number of music pieces recorded on the individual information recording medium.

User management system for musical accompaniment playing apparatus

The vapor phase growth on semiconductor wafers is carried out by an apparatus in which a multiplicity of semiconductor wafers are held by a holder so that the semiconductor wafers lie one over another in a vertical direction, and are rotated together with the holder, the holder is placed in a heater disposed in a reaction vessel, a raw material gas supply nozzle and a raw material gas exhaust nozzle are provided within the heater so that the semiconductor wafers are interposed between the gas supply nozzle and the gas discharge nozzle, and the gas supply nozzle and the gas discharge nozzle have gas supply holes and gas discharge holes, respectively, so that a raw material gas can flow on each semiconductor wafer in horizontal directions. When the temperature of the heater is raised by a heating source to heat the semiconductor wafers, the raw material gas is supplied from the gas supply holes to each semiconductor wafer, and thus a uniform layer is grown on each semiconductor wafer from the raw material gas.

Vapor phase growth on semiconductor wafers

In a high-voltage thyristor comprising a semiconductor body having contiguous pnpn four layers, and opposed anode and cathode electrodes and a gate electrode provided for the semiconductor body, one of p-base and n-base regions having an impurity concentration higher than the other has an impurity concentration which is no more than 8.times.10.sup.15 atoms/cm.sup.3 in the vicinity of a junction between the one base region and an adjacent emitter region and which has a gradually decreasing gradient toward the other contiguous base region. The one base region has a sheet resistance of 500 to 1500 ohms/.quadrature.. The realization of a high-voltage, large-diameter and large-current thyristor can be ensured.

High voltage thyristor with optimized doping, thickness, and sheet

A heat-conducting cooling module for cooling a semiconductor substrate in an integrated circuit package assembly in which a semiconductor substrate is mounted on a base board by small solder pellets, and which contains a single substrate or laminated substrates. A heat-conducting relay member is provided between the semiconductor substrate and a housing so as to be pressed onto the semiconductor substrate. At least either one of the housing or the heat-conducting relay member is made of a sintered product which includes silicon carbide as a chief component.

Heat-conducting cooling module

Disclosed is a field controlled thyristor in which a first semiconductor region of N.sup.+ -type, a second semiconductor region of N-type, third semiconductor regions of P-type, a fourth semiconductor region of N.sup.- -type and a fifth semiconductor region of P.sup.+ -type are formed in a semiconductor substrate having two main surfaces, the first, second and third semiconductor regions being exposed in the first main surface and the fifth semiconductor region being exposed in the second main surface; and the third semiconductor regions of P-type are spaced from each other by a predetermined spacing. The third semiconductor regions are connected with surface-exposed semiconductor regions exposed in the first main surface. The impurity concentration in the second semiconductor region decreases from the first semiconductor region toward the third semiconductor region so that a low forward voltage drop can be achieved along with a high reverse blocking voltage. Also disclosed is a method for forming the third semiconductor regions and the surface-exposed semiconductor regions through a diffusion process alone.

Field controlled thyristor with double-diffused source region

This invention provides a thermal fatigue resistant, low-melting point solder alloy consisting of 13 to 20% by weight Bi, 42 to 50% by weight, Pb, the balance being Sn. This solder alloy is suited for lap joints of electronic parts into or onto a printed substrate or a hybrid substrate.

Thermal fatigue resistant low-melting point solder alloys

A novel structure of a high breakdown voltage semiconductor device has a pair of major surfaces on which a pair of main electrodes are formed and a PN junction formed between the pair of major surfaces with a side surface to which the PN junction is exposed being covered with a passivation material. An auxiliary electrode of a conductive member is provided, which is disposed externally of the peripheral edge of the major surface of the semiconductor substrate, and which contacts to the passivation material and is electrically connected to the main electrode. When a voltage for reverse biasing the PN junction is applied between the pair of main electrodes, ions in the passivation material are collected by an electric field established in the passivation material so that the deterioration of the breakdown on the surface of the semiconductor substrate is prevented.

High breakdown voltage semiconductor device

A switching control circuit includes a first field controlled thyristor having a gate and a cathode between which a backward bias voltage source and a second field controlled thyristor are connected in series. Conduction of the second field controlled thyristor is controlled by controlling a voltage applied across the gate and the cathode, thereby to control conduction of the first field controlled thyristor. A large load current can be positively and safely turned on and off by a relatively small control current or voltage.

Field controlled thyristor control circuit with additional FCT in

An improvement in a semiconductor switching device is disclosed which comprises a semiconductor substrate of a first conductivity type, an anode region of a second conductivity type formed in the semiconductor substrate adjacent to a major surface thereof, a gate region of the second conductivity type formed a distance from the anode region, and a cathode region of the first conductivity type formed in the gate region and having a higher impurity concentration than the semiconductor substrate. A channel region is formed immediately below the cathode region thereby to directly contact the cathode region to the semiconductor substrate. A current path extending from the anode region to the cathode region through the semiconductor substrate is interrupted by a depletion layer produced in the vicinity of the channel region upon application of a reverse bias across a pn-junction formed between the gate region and the cathode region. When no reverse bias voltage is applied, the anode region, the semiconductor substrate and the gate region cooperate to function as a thyristor. The semiconductor switching device has a high dv/dt capability and is easily implemented in integrated circuits.

Lateral field controlled thyristor

A field controlled thyristor is disclosed which comprises a first emitter region exposed to one main surface of a semiconductor substrate and having a first conductivity type, a second emitter region exposed to the other main surface of the substrate and having a second conductivity type, a base region connecting the first and the second emitter region, and a gate region provided in the base region. The gate region consists of a slab-like first portion disposed parallel to both the emitter and a second portion connecting the first slab-like portion with one of the main surfaces of the semiconductor substrate. The impurity concentration of the base region is higher in the portion of the base region nearer to the emitter region having the same conductivity type as that of the base region than in the portion of the base region nearer to the emitter region having the opposite conductivity type to that of the base region. The field controlled thyristor has a high forward blocking voltage gain (anode-cathode voltage/gate bias voltage), a large current rating, and a high switching power capability and its switching time is very short.

Field controlled thyristor with dual resistivity field layer

Disclosed is a bidirectional light-activated thyristor which comprises a first and a second thyristor portion arranged in inverse-parallel with each other with a predetermined positional relation, an isolation section for electrically isolating the first and second thyristor portions from each other, a first and a second main electrode for connecting the first and second thyristor portions with each other in inverse-parallel, and a first and a second photo-trigger means for triggering the first and second thyristor portions respectively, wherein the photo-trigger signal from the first photo-trigger means is prevented by the first thyristor portion from reaching the second thyristor portion and the photo-trigger signal from the second photo-trigger means is prevented by the second thyristor portion from reaching the first thyristor portion.

Bidirectional light-activated thyristor having substrate optical

The whole body of a semiconductor device with its pn junction exposed ends covered by insulating glass is subjected to the exposure to radiation having an energy of higher than 0.5 MeV in terms of the reduced energy of electron beams while the semiconductor device is maintained at temperatures higher than 300.degree. C., and preferably higher than 350.degree. C. As a result, the life time of the minority carriers in the semiconductor device can be shortened without increasing the leakage current in the reverse direction.

Method of simultaneously controlling the lifetimes and leakage currents

Semiconductor devices with improved reverse characteristics are obtained by exposing the semiconductor bodies of the devices that are passivated by alkali-free glasses to a high energy radiation such as an electron radiation so as to shorten a life time of the bodies down to a predetermined value, while increasing the reverse leakage current of the bodies, and by subjecting the irradiated semiconductor bodies to an annealing treatment at a temperature of 250.degree. to 350.degree. C. for a sufficient time so as to decrease the reverse leakage current down to a predetermined value, while maintaining the order of the shortened life time.

Growing community of inventors

Hitachi, Japan

Masahiro Okamura