Tower Partners Semiconductor Co., Ltd.

Tower Semiconductor Ltd.

Towerjazz Panasonic Semiconductor Co., Ltd.

Masahiro Oda

Hirohisa Otsuki

Hiroki Takahashi

Nobuyoshi Takahashi

Hiroyuki Doi

Yasunori Morinaga

Hisashi Yano

Mitsunori Fukura

Yutaka Ito

Katsuya Furukawa

Yuka Inoue

A solid-state imaging device includes an N-type semiconductor layer, an element layer including a photoelectric conversion element and an active element, an interconnect layer providing an interconnect for the active element, and an element isolation trench penetrating the semiconductor layer. The element layer includes a P-type region and an N-type region. A first hole storage layer is formed on a surface of the semiconductor layer on a side opposite to the element layer. A second hole storage layer is formed in contact portions of the semiconductor layer and the element layer with the element isolation trench. The P-type region of the element layer and the first hole storage layer are connected to each other by the second hole storage layer.

Solid-state imaging device

A solid-state imaging device includes a plurality of pixels two-dimensionally arranged on a semiconductor substrate. Each of the pixels includes at least one shallow light receiving portion formed near a surface of the semiconductor substrate and at least one deep light receiving portion formed under the shallow light receiving portion. One or more of the shallow light receiving portions and the deep light receiving portion are connected to each other so as to form a second light receiving portion. The rest of the shallow light receiving portions forms a first light receiving portion. Excess electric charge in the first light receiving portion is discharged to the deep light receiving portion.

A plurality of pixels are two-dimensionally arranged on a semiconductor substrate. Each of the pixels includes: two photodiodes each generating charge by photoelectric conversion; first and second memories spaced apart from each other between the two photodiodes as viewed in cross section; a first readout gate reading charge from the two photodiodes to the first memory; and a second readout gate reading charge from the two photodiodes to the second memory.

A solid-state imaging element includes a plurality of shallow light receivers that are arrayed two-dimensionally in the vicinity of the surface of a semiconductor substrate and a plurality of deep light receivers that are arrayed two-dimensionally below the shallow light receivers. The shallow light receivers include visible light image light receivers that photoelectrically convert visible light and infrared light and output signals, and infrared light receivers that photoelectrically convert the infrared light. The infrared light receivers include a first infrared light receiver that is used to correct the signals output from the visible light image light receivers to provide signals of visible light components in the visible light image light receivers and a second infrared light receiver that is connected to the deep light receivers to form a multilayer light receiver.

Solid-state imaging element

A semiconductor device includes a first interlayer film formed on an upper surface of a substrate, a first metal wiring line, a second interlayer film, a second metal wiring line, a first via electrically connecting the first metal wiring line and the second metal wiring line, a landing pad embedded in an upper portion of the first interlayer film and penetrating the second interlayer film, and a second via penetrating the substrate and the first interlayer film from a back side of the substrate and connected to the landing pad. The lower surface position of the landing pad is different from that of the first metal wiring line.

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Hyogo, Japan

Masahiro Oda