Sanyo Electric Co., Ltd.

Nissin Foods Holdings Co., Ltd.

Masahiro Oda

Kazuhiro Sasada

Mitsuru Tanaka

Mayumi Nakasato

Shinichi Nakagawa

Takuo Nakazeko

Tatsuo Yamaya

Makoto Izumi

Ryu Shimizu

Toru Dan

Disclosed is an extruded noodle having a hole extending therethrough in a longitudinal direction, wherein: the hole closes or contracts during boiling or rehydration in hot water; and the hole in a cross section of the noodle is configured such that a plurality of grooves are formed rotationally symmetrically about a center of the cross section, extending in an outer radial direction from the center of the cross section of the noodle.

Extruded noodle and die piece for extruded noodle

Disclosed is a method for manufacturing instant noodles using extruded noodles, with each noodle having a hole extending therethrough in a longitudinal direction, wherein the hole closes or contracts during boiling or rehydration in hot water and the hole in a cross section of the noodle is configured such that a plurality of grooves are formed rotationally symmetrically about a center of the cross section, extending in an outer radial direction from the center of the cross section of the noodle.

An imaging device includes a storage portion of carriers, a multiplier section having a multiplier electrode multiplying carriers, a holding portion of the carriers and a readout electrode of carriers, wherein the multiplier electrode is set to an OFF-state potential and carriers are transferred to the holding portion after the potential of the readout electrode is set to an ON-state potential, and the ON-state potential of the readout electrode is maintained at least until a signal corresponding to the carriers transferred to the holding portion is read.

Imaging device

This image sensor includes a charge increasing portion for increasing the quantity of charges, a first electrode for applying a voltage regulating a region adjacent to the charge increasing portion to a prescribed potential, a second electrode provided adjacently to the first electrode for applying another voltage increasing the quantity of charges in the charge increasing portion, a first wire formed on a prescribed layer for supplying a signal to the first electrode and a second wire formed on a layer different from the prescribed layer for supplying another signal to the second electrode.

Image sensor comprising multilayer wire

An imaging device capable of multiplying carriers and miniaturizing the device is obtained. The imaging device includes a carrier storage portion for storing carriers generated by photoelectric conversion, having a photoelectric conversion function, a multiplier section including a multiplier electrode applying an electric field for multiplying carriers due to impact ionization by an electric field, one first transfer electrode so provided between the carrier storage portion and the multiplier electrode as to be adjacent to the carrier storage portion and the multiplier electrode.

Imaging device including a multiplier electrode

A method of fabricating a semiconductor device capable of improving reliability of a gate insulator film is obtained. This method of fabricating a semiconductor device comprises a step of forming a gate insulator film on the main surface of a semiconductor layer by heat treatment, and the step of forming the gate insulator film includes a step of performing the heat treatment in an atmosphere containing oxidizing gas at a temperature exceeding the temperature causing viscous flow of the gate insulator film thereby forming the gate insulator film on the main surface of the semiconductor layer.

Method of fabricating semiconductor device

A method for manufacturing a semiconductor device including forming a buffer film on a semiconductor substrate, forming a element partitioning trench, forming a oxidized film on the surface of the element partitioning trench, and washing the semiconductor substrate with hydrofluoric acid. The washing removes part of the buffer film, and the end of the buffer film is inwardly removed from the top edge of the element partitioning trench by a predetermined distance. The distance and the thickness of the oxidized film are represented by the expression 0&#x2266;x&#x2266;(d/2 sin &#x3b8;), where x represents the distance, and &#x3b8; represents the angle between a plane parallel to the semiconductor substrate and a side surface of the element partitioning trench.

Method for manufacturing semiconductor device

Threshold voltage fluctuation in upper corner portions of a trench isolation is inhibited by rounding upper corner portions of the trench by thermal oxidation, introducing a first impurity into both upper corner portions of the trench and heat-treating the semiconductor substrate. Embodiments include increasing the threshold voltage in the upper corner portion of the trench in an n-channel transistor, previously increased by rounding oxidation, and introducing a p-type impurity, thereby canceling the threshold voltage reduction resulting from diffusion of the impurity during heat-treating the semiconductor substrate. In a p-channel transistor, the threshold voltage in the upper corner portion of the trench is increased by rounding oxidation thereby canceling the threshold voltage reduction resulting from introduction of the p-type first impurity into both upper corner portions of the trench.

Growing community of inventors

Itami, Japan

Masahiro Oda