Sumitomo Electric Device Innovations, Inc.

Fujitsu Corporation

Eudyna Devices Inc.

Felica Networks, Inc.

Fujitsu Quantum Devices Limited

Masahiro Nishi

Kozo Makiyama

Tsuyoshi Takahashi

Masahito Kanamura

Koji Hashizume

Ryoji Matsuyama

Toshikatsu Shimura

This information processing apparatus includes an instruction determining unit and a signal output unit. The instruction determining unit determines an instruction related to communication using a code image with an external apparatus. The signal output unit outputs, on the basis of the determined instruction related to the communication, a signal for controlling an operation related to communication of the external apparatus. Accordingly, high usability can be provided for communication with the external apparatus.

Information processing apparatus and information processing method

A semiconductor device includes a semiconductor layer formed on a substrate, an electrode contact window that includes a recess formed on a surface of the semiconductor layer, an inner wall having a slope, and a source electrode, a drain electrode, and a gate electrode formed on the semiconductor layer, in which the drain electrode is in contact with the slope of the inner wall.

Semiconductor device comprising slanted slope electrode contact windows

A method of fabricating a semiconductor device includes: forming a metal layer containing Al; forming an insulating film on the metal layer; forming an opening pattern to the insulating film, the metal layer being exposed in the opening pattern; and forming a wiring layer in the opening pattern, a first portion being disposed between an edge of the wiring layer and an edge of the opening pattern, a width of the first portion being 1 &#x3bc;m or less, and the metal layer being exposed in the first portion.

Method of fabricating semiconductor device

Method of manufacturing semiconductor device

A manufacturing method according to an embodiment of this invention is a method of manufacturing a semiconductor device, which has: a first step of forming a first electrodecontaining Ti or Ta on a top face of a nitride semiconductor layer; a second step of forming a second electrodecontaining Al on a top face of the first electrode; a third step of forming a coating metal layercovering at least one of an edge of a top face of the second electrodeand a side face of the second electrode, having a windowexposing the top face of the second electrodein a region separated from the foregoing edge, and containing at least one of Ta, Mo, Pd, Ni, and Ti; and a step of performing a thermal treatment, after the third step.

Semiconductor device and method of manufacturing semiconductor device

A semiconductor device includes: a nitride semiconductor layer; a first silicon nitride film that is formed on the nitride semiconductor layer, has a first opening whose inner wall is a forward tapered shape; a second silicon nitride film that is formed on the first silicon nitride film, and has a second opening whose inner wall is an inverse tapered shape; and a gate electrode formed so as to cover the whole surface of the nitride semiconductor layer exposed on the inside of the first opening; wherein a side wall of the gate electrode separates from the first silicon nitride film and the second silicon nitride film via a cavity.

Semiconductor device and method for manufacturing the same

Semiconductor device and method of manufacturing the same

A semiconductor device includes a SiC substrate, a semiconductor layer formed on the SiC substrate, a via hole penetrating through the SiC substrate and the semiconductor layer, a Cu pad that is formed on the semiconductor layer and is in contact with the via hole, and a barrier layer covering an upper face and side faces of the Cu pad, and restrains Cu diffusion.

A method for fabricating a semiconductor device including performing oxygen plasma treatment to a surface of a nitride semiconductor layer, a power density of the oxygen plasma treatment being 0.2 to 0.3 W/cm.

Method for fabricating semiconductor device including performing oxygen plasma treatment

A method of manufacturing a semiconductor device includes: forming a lower electrode layer in contact with a surface of a nitride semiconductor layer; forming an Al layer on the lower electrode layer; performing a heat treatment after the formation of the Al layer; removing the Al layer after the heat treatment is performed; and forming an upper electrode layer on the lower electrode layer after the removal of the Al layer.

A semiconductor device is configured so as to comprise a substrate, an n-type semiconductor layer or an undoped semiconductor layer on the substrate, and an ohmic electrode on the n-type semiconductor layer or the undoped semiconductor layer, and the ohmic electrode is configured so as to comprise a tantalum layer formed on the n-type semiconductor layer or the undoped semiconductor layer, an aluminum layer formed on the tantalum layer, and a metal layer formed on the aluminum layer and made of any one material of tantalum, nickel, palladium, and molybdenum.

Growing community of inventors

Yokohama, Japan

Masahiro Nishi