Sharp Kabushiki Kaisha Corporation

Panasonic Intellectual Property Management Co., Ltd.

Panasonic Corporation

Zeon Corporation

International Business Machines Corporation

Sanyo Electric Co., Ltd.

Lintec Corporation

Matsushita Electric Industrial Co., Ltd.

Globalfoundries Inc.

Tokyo Electron Limited

Shimano Inc.

Mitsubishi Heavy Industries Engine & Turbocharger, Ltd.

Tottori Sanyo Electric Co., Ltd.

Panasonic Energy Co., Ltd.

Asahi Kasei Microdevices Corporation

Masahiro Nakamura

Masahito Yamana

Takeyuki Yamaki

Sebastian Ulrich Engelmann

Hideo Kobayashi

Nicholas C M Fuller

Takayuki Suzuki

Richard Stephan Wise

Robert L Bruce

Shozo Oshio

Tatsuya Okuno

Koji Yamaguchi

Eric Andrew Joseph

Hiroyuki Miyazoe

Markus Brink

Takuji Maeda

Michael A Guillorn

Yu Zhu

Shinji Inoue

Nathan P Marchack

Takeshi Abe

Masahiro Nakanishi

Mahmoud M Khojasteh

Yoshihiro Sekimoto

Makoto Ochi

Tatsuya Sugimoto

Satyavolu S Papa Rao

Hiroya Tsuji

George Gabriel Totir

Norimichi Shigemitsu

Nobuhiro Ide

Tomoyuki Saito

Josephine B Chang

Masanobu Honda

Eiji Ohno

Takashi Arai

Osamu Kariyama

Kenichi Takahashi

Tadashi Ono

Hiroshi Sakurai

Takaaki Matsuoka

Kazuya Hisada

Akihiro Horikawa

Hirokazu So

Kohei Kawamura

Shinichi Shinohara

Takahiro Koyanagi

Mitsuo Yaguchi

Daiki Kato

Hironobu Nishimura

Masahiko Kotoyori

Ravi K Dasaka

Youshin Lee

Tomomichi Ueda

Bang N To

Yukio Ohtake

Hiroki Yabe

Atsushi Mizawa

Junichi Sugaya

Norihiro Ito

Hiroki Etoh

Yoshio Mitsutake

Yuki Kotani

Tsuyoshi Wakahira

Kanya Kaji

Keiji Nishikiori

Isao Kato

Makoto Ozaki

Akinori Kitamura

Takahiro Yamashita

Eigo Katou

Takeo Koike

Kei Kobayashi

Keigo Sakamoto

Eiichi Shimizu

Naoto Ozawa

Toshihiko Tanaka

Kenji Hatazawa

Takaharu Yoshida

Hiroyuki Mitsui

Takefumi Suzuki

Nobuhiro Fujii

Shoji Iwasaki

Edmund M Sikorski

Shigeyoshi Sakuma

Kazuto Matsuda

Kouichi Noma

Shigekazu Kogita

Akiho Yoshizawa

Zenichi Kakinuma

Tetsuya Fujimoto

Nozomi Hirai

Yuji Yamagami

Goh Matsuura

Tetsushi Konda

Hiroshi Kinemura

Etsuo Matsui

Jouji Yamada

Yusuke Furuta

A connection structure includes: a first structure body and a second structure body which is detachably connected to the first structure body. The first structure body includes a first fitting portion, and the second structure body includes a second fitting portion which is detachably fitted with the first fitting portion. At least one of the first fitting portion or the second fitting portion is an anisotropic elastic structure body including a periodic structure and having an elasticity which differs depending on a direction. When a fitting direction in which the first fitting portion and the second fitting portion are fitted together is a first direction, and a direction which is orthogonal to the first direction is a second direction, the anisotropic elastic structure body has an elasticity which is greater in the second direction than in the first direction.

Connection structure, decoration method, and connection structure body set

A structural body includes: a three-dimensional net shaped body including a plurality of net lines that form a three-dimensional net shape; and a plurality of objects respectively present in two or more of a plurality of spaces partitioned by the plurality of net lines. The plurality of objects are each a mobile object that moves within one of the plurality of spaces or moves over two or more of the plurality of spaces.

Structural body, system, and structural product

The present disclosure aims to suppress, in a winding type electrode body in which a negative electrode lead is bonded to a winding start side end of a negative electrode collector, electrode plate deformation in association with charge/discharge cycles. A nonaqueous electrolyte secondary battery according to one aspect of the present disclosure includes a winding type electrode body (). A negative electrode () includes a negative electrode lead () bonded to a winding start side end of a negative electrode collector and is wound at least one turn from a winding-direction inner end so as not to face a positive electrode () with a separator () interposed therebetween. The negative electrode () includes an insulating tape () adhered to the negative electrode collector so as to straddle a surface of the negative electrode lead () in a winding direction.

Nonaqueous electrolyte secondary battery

A wavelength converter includes: a substrate portion; and an optical conversion layer including optical conversion inorganic particles and a binder portion that mutually holds the optical conversion inorganic particles, and being formed on the substrate portion, wherein the substrate portion and the binder portion bond to each other, and wherein the binder portion includes, as a main component, an inorganic polycrystalline substance composed in such a manner that inorganic material particles having an average particle size of 1 &#x3bc;m or less are bound to one another, and has thermal conductivity of 2 w/mK or more.

Wavelength converter

A compressor wheel includes a compressor wheel body, and a thermal insulating coating layer disposed so as to cover at least a part of a back surface of the compressor wheel body.

Compressor wheel and supercharger

A nonaqueous electrolyte secondary battery according to an embodiment of the present disclosure includes: a wound electrode assembly () formed by spirally winding, via a separator (), a positive electrode () and a negative electrode () in which a negative electrode mixture layer is formed on a negative electrode core, where: the negative electrode () includes a non-opposing portion () that is wound 1.25 turns or more from an inner edge in a winding direction of the wound electrode assembly () without facing the positive electrode via the separator (); the non-opposing portion () includes a negative electrode mixture layer-formed portion () in which the negative electrode mixture layer is formed on at least either side continuously in an inward winding direction from an outer edge in the winding direction; and the negative electrode mixture layer-formed portion () is wound 0.75 turns or more.

Cylindrical nonaqueous electrolyte secondary battery

A wavelength conversion member includes: a substrate; a wavelength converter including phosphor particles excited by excitation light and a binder layer that fixes or adheres the adjacent phosphor particles to one another, the wavelength converter being provided on a front surface side of the substrate; and a light reflecting film that reflects fluorescent light radiated by the phosphor particles, the light reflecting film being provided on at least a part of an interface between the substrate and the wavelength converter, wherein a refractive index of the phosphor particles is larger than a refractive index of the binder layer. It is preferable that the binder layer include nanogaps which are voids with an average diameter of 300 nm or less in an inside.

Wavelength conversion member

A wavelength conversion member includes: a substrate; and a wavelength converter that converts color of incident light, the wavelength converter being provided on a surface of the substrate. The wavelength converter has: inorganic phosphor particles which convert the color of the incident light; and a binder layer that fixes the inorganic phosphor particle to one another, the binder layer including at least one type of metal oxides with a melting point of 800&#xb0; C. or less. The substrate and the wavelength converter are fixed to each other by the binder layer of the wavelength converter.

A silicon nitride cap on a gate stack is removed by etching with a fluorohydrocarbon-containing plasma subsequent to formation of source/drain regions without causing unacceptable damage to the gate stack or source/drain regions. A fluorohydrocarbon-containing polymer protection layer is selectively deposited on the regions that are not to be etched during the removal of the nitride cap. The ability to remove the silicon nitride material using gas chemistry, causing formation of a volatile etch product and protection layer, enables reduction of the ion energy to the etching threshold.

High selectivity nitride removal process based on selective polymer deposition

A light emitting deviceincludes: a substrate; and a phosphor layercomposed in such a manner that a large number of phosphor particlesare adhered onto a flat surfaceof the substrate. At least one of the phosphor particlesis a polyhedral phosphor particlethat is monodispersed, is derived from a crystal structure of garnet and has facets, and a median particle size Dof the polyhedral phosphor particleis 30 &#x3bc;m or more and a maximum thickness of the phosphor layeror less. It is preferable that at least one of the phosphor particlesadhered onto the flat surfaceof the substrateis the polyhedral phosphor particlethat is monodispersed, is derived from the crystal structure of the garnet, and has the facets.

Light emitting device

A positive electrode active material layer is formed on at least one surface of a positive electrode current collector having a substantially rectangular planar shape. The positive electrode current collector includes an exposed portion in a partial region in a longitudinal direction and at an end portion of the partial region in a width direction, and a positive electrode lead is to be connected to the exposed portion. In a region in which the positive electrode active material layer is formed, an elastic modulus of a first region adjacent to the exposed portion in the width direction is larger than elastic moduli of second regions adjacent to the exposed portion and the first region in the longitudinal direction.

Electrode sheet for use in power storage device and power storage device including electrode sheet

Fabrication of a semiconductor device includes providing a semiconductor substrate, and a dielectric layer disposed over the semiconductor substrate. The dielectric layer includes a plurality of vias extending through the dielectric layer to the top surface of the semiconductor substrate. Each of the vias contains an organic planarization material. The dielectric layer is removed by plasma etching with a gas having a general chemical formula of CHFwherein x is greater than 3 and y is greater than z to provide an array of pillars including the organic planarization material on the semiconductor substrate.

Image reversal process for tight pitch pillar arrays

A method of manufacturing a camera module that is low profile and that can achieve superior resolving power, a camera module, and an imaging device are provided. A positioning step of positioning an object-side group optical unit () along an optical axis direction with the use of a jig () such that the object-side group optical unit () is located so as not to be in contact with an image-plane-side group lens () and a fixing step of fixing the object-side group optical unit () to a lens holder () are included.

Method of manufacturing camera module and camera module

Growing community of inventors

Osaka, Japan

Masahiro Nakamura