Kyocera Corporation

Fujitsu Corporation

Kyushu Fujitsu Electronics Limited

Masahiro Nakahara

Tetsuji Hayasaki

Taiji Ema

Yoshikazu Kanazawa

Yoshihiro Okawa

Yumiko Itoh

Toshiyuki Hamada

Shinichi Nomura

Yukinori Miyazaki

Mitsuhiro Moriyama

Ryuji Tazume

Disclosed is a corrosion resistant member comprising a sintered material having an &#x3b1;-AlOcrystal and an YAG (yttrium-aluminum-garnet) crystal. The corrosion resistant member contains metal elements, 70 to 98% by mass (inclusive) of Al in terms of AlOand 2 to 30% by mass of Y in terms of YO. The corrosion resistant member has a peak intensity ratio I/Iwithin the range from 0.94 to 1.98, preferably. 2.21 or higher, wherein Iand Irepresent peak intensities attributed to the (116) face and the (104) face, respectively, of an &#x3b1;-AlOcrystal as measured by X-ray diffractometry on its surface layer.

Corrosion-resistant member, treatment apparatus and sample treatment method using the member, and method for manufacture of corrosion-resistant member

A corrosion resistant member comprising a base material made of ceramics or a metal and at least one layer of corrosion resistant film formed on the surface of the former. At least one layer of the corrosion resistant film is a corrosion resistant film formed from a compound of the group 3 element as the main component and has specific characteristics so that it can improve film property.

Corrosion resistant member and method for manufacturing the same

There is provided a ceramic member for semiconductor manufacturing equipment which is formed of an alumina-based sinter containing an yttrium-aluminum-garnet at the amount of 3 to 50 wt %, silicon oxide at the amount of not more than 0.2 wt %, preferably 0.1 wt %, and the balance substantially alumina, wherein the sinter has dielectric loss of not more than 4&#xd7;10particularly 2.5&#xd7;10or less in the frequency range of 10 MHz to 5 GHz. Such a member may be formed of a ceramic sinter including an aluminum phase having mean crystal grain size in a range of 2 to 10 &#x3bc;m and a yttrium-aluminum-garnet phase having a mean crystal grain size in a range of 1.5 to 5 &#x3bc;m, wherein the ratio of the mean crystal grain size of the alumina phase to that of the yttrium-aluminum-garnet phase is larger than 1 and smaller than 7.

Ceramic member for semiconductor manufacturing equipment

A plasma display panel of a surface discharge type is disclosed, which can positively generate the discharge for display while suppressing the power consumption even when the number of the electrodes is increased for attaining the high definition. A plurality of display electrode pairs are arranged in proximity with each other inside of a pair of substrates opposed to each other with a discharge gap formed therebetween. Each display electrode includes a main pattern extending in one direction, independent discharge patterns each formed for each luminous area corresponding to a display cell, and a plurality of auxiliary patterns for electrically connecting the main pattern and the discharge patterns to each other. The auxiliary patterns are higher in conductivity than the discharge patterns.

Surface discharge plasma display panel

The present invention is to provide ceramic members for being used as members constituting a processing chamber for etching or cleaning semiconductor substrates or wafers by halogen plasma. A ceramic member includes at least 10% by volume of a compound of yttrium-aluminum-garnet (YAG) phase and not more than 90% by volume of at least an oxide phase selected from aluminum oxide, yttrium oxide and aluminum nitride. Particularly, the ceramic member contains yttrium within a range of 35 to 80 mole % in terms of yttrium oxide Y O and aluminum within a range of 20 to 65 mole % in terms of aluminum oxide Al O to form a mixture of YAG phase with yttria phase, producing ceramic material having high corrosion resistance to halogenous gas and its plasma. Such ceramic material may be well applicable to members to be exposed by the halogen plasma, for example, a chamber wall, a wafer stage, a clamp ring, a shower head, which are used in systems for etching and cleaning semiconductor wafers. A ceramic member of the invention can also be composed of YAG and alumina or aluminum nitride, showing high thermal conductivity enough to prevent a deposit of the reaction products of halide over the whole members in the chamber by external heating.

Ceramic member resistant to halogen-plasma corrosion

An electrically erasable and programmable read only memory includes a memory cell array having a plurality of memory cells coupled to bit lines and word lines. Each of the memory cells includes a select transistor controlled by one of the word lines, a memory transistor of the enhancement type coupled to one of the bit lines through the select transistor and having a control gate, and a drive transistor having a gate coupled to the one of the word lines and applying a control gate voltage supplied through a program line to the control gate of the memory transistor. Further, the electrically erasable and programmable read only memory includes a select device for selecting at least one of the bit lines and one of the word lines on the basis of an address supplied from an external device, and a sense amplifier for outputting data stored in the memory cell array. Also provided is a discharging device which discharges the drain regions and the control gates of the memory transistors after a predetermined time has passed from a transition of the address and application of the control gate voltage.

Growing community of inventors

Kokubu, Japan

Masahiro Nakahara