Matsushita Electric Industrial Co., Ltd.

Mita Industrial Co., Ltd.

Sumitomo Electric Industries, Limited

Masahiro Nakagawa

Shinji Fujiwara

Eiichiro Tanaka

Tetsuro Nakamura

Hiroyuki Harada

Masahiro Sako

Takashi Kotani

Yasushi Kamezaki

Toru Tanjo

Yukio Tanisaki

Hiromichi Oguma

Kohji Tada

Kotani Toshihiro

A direct contact type image sensor includes an optical fiber array plate including a transparent substrate and an optical fiber array and having a lower face brought into close contact with an original document. A semiconductor image sensor chip including a photosensor array is mounted on an upper face of the optical fiber array plate by transparent photo-setting and insulating resin. A circuit conductive layer is formed on an upper face of the transparent substrate, and a bump electrode is formed on a lower face of the semiconductor image sensor chip so as to be brought into contact with the circuit conductive layer. A light source is provided for illuminating the original document. The optical fiber array plate is formed, on the upper face, with a slit for allowing light from the light source to pass therethrough. A first light shielding layer is provided at other portions of the lower face of the optical fiber array plate than that corresponding to the optical fiber array, and a second light shielding layer is provided at other portions of the upper face of the optical fiber array plate than those corresponding to the optical fiber array and the slit.

Direct contact type image sensor and its production method

A direct-contact type image sensor device according to the present invention includes: a light-transmitting substrate having an upper surface and a lower surface; a patterned conductor layer formed over the upper surface of the light-transmitting substrate; e transparent electrically conductive layer formed on the lower surface of the light-transmitting substrate; an image sensor chip mounted face-down on the upper surface of the light-transmitting substrate, with an insulating resin layer being interposed between the image sensor chip and the upper surface of the light-transmitting substrate, the image sensor chip being mounted by a flip-chip-bonding method, a light-interrupting layer provided between the patterned conductor layer and the upper surface of the light-transmitting substrate; and a light-interrupting portion for interrupting a portion of a light beam, the light beam being radiated on an original through the light-transmitting substrate by a light source disposed above the light-transmitting substrate. The image sensor chip and the light-interrupting portion serve as an optical throttle for the light beam.

Direct-contact type image sensor device, an image sensor unit, and

A document conveying apparatus for a document processor has a pair of width restriction members for correctly positioning documents to be processed. The width restriction members are movable in the width direction of the document processor. First and second rack-and-pinion mechanisms are spaced apart in the document conveying direction and are interlocked so that the racks of both mechanisms move together in a synchronized manner. Each width restriction member is coupled to two of the racks that move in the same direction.

Document conveying apparatus

A document conveying apparatus has a document pushing-down/adjusting mechanism disposed at an upper position on the downstream side of a document discharge port. The document pushing-down/adjusting mechanism acts on the rear end of the document on delivery after its rear end is substantially liberated from being nipped by a pair of document discharge rollers, forcibly pushes the rear end of the document down toward the upstream end position on the document-placing plate means, and holds the document for the document-placing plate means for a predetermined period of time.

Document conveying appartus

A direct-contact type image sensor device according to the present invention includes: a light-transmitting substrate having an upper surface and a lower surface; a patterned conductor layer formed over the upper surface of the light-transmitting substrate; a transparent electrically conductive layer formed on the lower surface of the light-transmitting substrate; an image sensor chip mounted face-down on the upper surface of the light-transmitting substrate, with an insulating resin layer being interposed between the image sensor chip and the upper surface of the light-transmitting substrate, the image sensor chip being mounted by a flip-chip-bonding method, a light-interrupting layer provided between the patterned conductor layer and the upper surface of the light-transmitting substrate; and a light-interrupting portion for interrupting a portion of a light beam, the light beam being radiated on an original through the light-transmitting substrate by a light source disposed above the light-transmitting substrate. The image sensor chip and the light-interrupting portion serve as an optical throttle for the light beam.

A semiconductor device according to the present invention includes: a light-transmitting substrate having a first surface and a second surface; a circuit conductor layer formed on the first surface of the light-transmitting substrate; a semiconductor chip having electrodes formed on a surface thereof, the semiconductor device being mounted face-down on the first surface of the light-transmitting substrate; a photo-thermal cross-linkable insulating resin layer for fixing the semiconductor chip on the light-transmitting substrate; a plated metal layer formed on at least a portion of the circuit conductor layer, the electrodes of the semiconductor chip being connected to the circuit conductor layer through the plated metal layer; an alloy layer formed in an abutting portion between each plated metal layer and the circuit conductor layer; and a second alloy layer formed in an abutting portion between each electrode and each plated metal layer, the alloy layers being formed by melting and recoagulating the plated metal layer upon the circuit conductor layer.

Semiconductor device, an image sensor device, and methods for producing

An apparatus for producing a single crystal according to the CZ method, which comprises

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Osaka, Japan

Masahiro Nakagawa