Hitachi, Ltd.

Hitachi Information Control Systems, Inc.

Masahiro Nagasu

Mutsuhiro Mori

Hideki Miyazaki

Ryuichi Saito

Yutaka Sato

Katsumi Ishikawa

Shin Kimura

Hideo Kobayashi

Junichi Sakano

Satoru Inarida

Motomi Shimada

Naoki Sakurai

Kiyoshi Nakata

Shuji Katoh

Hiromitsu Sakai

Mutsuhiro Terunuma

Hidetoshi Aizawa

Ryuji Iyotani

Dai Tsugawa

Katsunori Suzuki

Kazuji Yamada

Seiji Ishida

Tsutomu Yatsuo

Hiroshi Arita

Shigeta Ueda

Akira Horie

Hirokazu Inoue

Eiichi Toyota

Haruka Shimizu

Sunao Funakoshi

Yasuo Osone

Kazutoshi Ogawa

Kento Mochizuki

Hironori Kodama

Yasuhiko Kohno

Toshiyuki Murakami

Masaomi Konishide

Shigenobu Yanai

Shuichi Tachihara

Tetsu Sugiura

Yasuhiko Kono

Mikiya Nohara

Daijiro Araki

Keiji Ishida

Ryoichi Oishi

Tadanori Sato

Toshio Sekine

Tetsuo Mizoguchi

A power converter includes a first electric power conversion unit having an inverter for converting a first DC electric power to an AC electric power, an AC circuit connected to the first electric power conversion means;

Power converter and power converter of rolling stock

A control device for a railway vehicle controls an inverter device based on a direct-current link voltage Vfc between the opposite terminals of a filter capacitor. A direct-current voltage applied to the inverter device during regeneration is the sum of a voltage Vb of power storage equipment and an overhead wire voltage Vs, so that only detecting the direct-current link voltage Vfc is not enough to separate the voltage Vb of the power storage equipment and the overhead wire voltage Vs from each other. The power storage equipment can be connected in series with the inverter device, and a voltage sensor that detects the overhead wire voltage Vs is provided between a current collector device and a grounding point. The power storage equipment is controlled based on the detection result from the voltage sensor.

Drive device for railway vehicle

The invention provides a switching circuit of a power semiconductor device having connected in parallel SiC diodes with a small recovery current, capable of significantly reducing turn-on loss and recovery loss without increasing the noise in the MHz band, and contributing to reducing the loss and noise of inverters. The present invention provides a switching circuit and an inverter circuit of a power semiconductor device comprising a module combining Si-IGBT and SiC diodes, wherein an on-gate resistance is set smaller than an off-gate resistance.

Drive circuit of semiconductor device

A gate driving circuit for a voltage-driven power semiconductor switching device has (a) the voltage-driven power semiconductor switching device, (b) a driving circuit for supplying a drive signal to the gate electrode of the switching device, and (c) an inductance between the emitter control terminal or source control terminal of the switching device and the emitter main terminal or source main terminal of a semiconductor module. A voltage produced across the inductance is detected. The gate-driving voltage or gate drive resistance is made variable based on the detected value.

Drive circuit for power semiconductor switching device

The invention provides a control apparatus of a power conversion system for driving an induction motor via a VVVF inverter, wherein the AC voltage generated by the inverter is increased so as to expand the high-speed side property of the induction motor, to thereby improve the performance during power running and regenerative braking. In the present system, a DC power supply source having a power storage system with a capacity capable of processing the current flowing into or out of the inverter is inserted in series to the ground side of the input of the inverter, and the output voltage thereof is controlled from zero in a continuous manner to be added to the trolley voltage, which is then applied to the inverter.

Control apparatus of power conversion system

An object of the present invention is to reduce the conducting loss of an existing conversion circuit while suppressing its noise. The present invention is typically a circuit arrangement includes at least one switching device and a free-wheel diode connected in parallel with the switching device. The free-wheel diode is formed by connecting a silicon PiN diode in parallel with a Schottky barrier diode that uses a semiconductor material having a wider band gap than silicon as a base material. The silicon PiN diode and Schottky barrier diode are separate chips.

Circuit arrangement having a free-wheel diode

In a conventional hybrid scheme used to mount a rechargeable battery in a motor vehicle, store into the battery the electric power that has been obtained via a regenerative brake, and utilize the power during acceleration of the vehicle, when a temperature rise of the battery due to charging or discharging causes a temperature of the battery to stay outside a defined range, it has been absolutely necessary to stop the battery charge or discharge, and fuel efficiency has decreased. This invention predicts a charge level and temperature of a rechargeable battery from the cruising input/output power requirements calculated from route information and historical records of cruising, prevents a stoppage of the battery by calculating chronological engine output and brake control data for the temperature to stay within a defined range, and hence improves fuel efficiency.

Hybrid cruising control system

A subject of the present invention is to reduce noise caused by ringing or the like while reducing turn-on power loss of the element and reverse recovery loss of the diode in a switching circuit of a power semiconductor element to which a SiC diode having small recovery current is connected in parallel. A means for solving the problem is to detect gate voltage and/or collector voltage of the power semiconductor switching element and change gate drive voltage in several stages based on the detected value.

Gate drive circuit with reduced switching loss and noise

A high reliability information transmission system which can continue transmission upon at the occurrence of multiple failures. The system includes two transmission lines and transmission terminals coupled to both of the transmission lines. Data can be transmitted between respective terminals using both transmission lines. The transmission terminals check the data reception status at the corresponding receiving terminals. When data is not being received, the data may be relayed to the receiving terminal using one of the other transmission lines.

Information transmission system and information transmission method

A gate driver circuit of a voltage drive type power semiconductor switching device capable of speeding up di/dt and dv/dt even during large-current driving to thereby reduce the switching loss is disclosed. This power semiconductor switching device gate driving circuit includes a drive circuit which applies a drive signal to the gate electrode of the power semiconductor switching device and a measurement unit for measuring a flow current of the power semiconductor switching device. Based on a detected value of the flow current of the power semiconductor switching device, the gate is made variable in mirror voltage thereof.

Gate driver circuit for switching device

A fault detection system detecting malfunctions or deteriorations, which may result in an inverter fault, is provided. The system has a temperature sensor installed on a semiconductor module to monitor a temperature rise rate. It is judged that an abnormal condition has occurred if the thermal resistance is increased by the deterioration of a soldering layer of the semiconductor module or by drive circuit malfunctions and, as a result, the relation between an operation mode and the temperature rise rate falls outside a predetermined range.

Fault detection system

A railway vehicle operation-control system includes at least one central processing unit being connected to a plurality of devices, which are connected in parallel, via information communication means, the plurality of the devices having at least one operational state-monitoring function which transmits information on operational states of each device to the central processing unit; wherein a total controlled-variable necessary for the system is attained by allocating the total control variable to each device based on operational states determined from results of monitoring performed by the operational state-monitoring function, and a performance margin which is defined as a difference between a permissible power-output value and a current power-output value for each device while monitoring and reflecting the performance margin of each device.

Railway vehicle operation-control system and a railway vehicle using the operation control system

Control electrode wirings which are led out from control electrodes over a number of chips built in a flat package and insulating members which are provided in order to insulate the control electrode wirings from main electrode wirings are also given function of positioning of the respective semiconductor chips in the flat package. Further, a one-piece control electrode wiring net is housed in the common electrodes of the package and the electrodes which are led out from the control electrodes of the respective semiconductor chips are connected to the net to simplify the processing of a large number of gate signal wirings.

Flat semiconductor device and power converter employing the same

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Hitachinaka, Japan

Masahiro Nagasu