Tokyo Electron Limited

Tokyo Electron Limi Ted

Masahiro Murata

Hitoshi Kato

Shigehiro Miura

Jun Sato

Yutaka Takahashi

Kentaro Oshimo

Tomoko Sugano

Hiroyuki Kikuchi

A film deposition method is provided for filling a recessed pattern formed in a surface of a substrate with a film. In the method, an adsorption blocking group is formed by adsorbing chlorine gas activated by plasma on a top surface of the substrate and an upper portion of the recessed pattern. A source gas that contains one of silicon and a metal, and chlorine, is adsorbed on a lower portion of the recessed pattern where the adsorption blocking group is not formed, by supplying the source gas to the surface of the substrate including the recessed pattern. A molecular layer of a nitride film produced by a reaction of the source gas and a nitriding gas is deposited on the lower portion of the trench by supplying the nitriding gas to the surface of the substrate including the recessed pattern.

Film deposition method and film deposition apparatus

A film deposition method for filling a recessed pattern with a SiN film is provided. NHgroups are caused to adsorb on a surface of a substrate containing a recessed pattern formed in a top surface of the substrate by supplying a first process gas containing NHconverted to first plasma to the surface of the substrate containing the recessed pattern. The NHgroups is partially converted to N groups by supplying a second process gas containing Nconverted to second plasma to the surface of the substrate containing the recessed pattern on which the NHgroups is adsorbed. A silicon-containing gas is caused to adsorb on the NHgroups by supplying the silicon-containing gas to the surface of the substrate containing the recessed pattern on which the NHgroups and the N groups are adsorbed. The above steps are cyclically repeated.

Film deposition method

A protective film forming method is provided. In the method, substantially an entire surface of a silicon-containing underfilm is terminated with fluorine by supplying a fluorine-containing gas to the silicon-containing underfilm formed on a substrate having a surface including a plurality of recesses and a flat surface provided between the adjacent recesses. A surface of the silicon-containing underfilm formed on the flat surface of the substrate is nitrided by supplying a nitriding gas converted to plasma to the silicon-containing underfilm terminated with fluorine such that a silicon adsorption site is formed on the surface of the silicon-containing underfilm formed on the flat surface of the substrate. A silicon-containing gas is adsorbed on the silicon adsorption site by supplying the silicon-containing gas to the silicon-containing underfilm.

Protective film forming method

A method for processing a substrate is provided. According to the method, a process gas is supplied to a surface of a substrate, and then a separation gas is supplied to the surface of the substrate. Moreover, a first plasma processing gas is supplied to the surface of the substrate in a first state in which a distance between the first plasma generation unit and the turntable is set at a first distance, and a second plasma processing gas is supplied to the surface of the substrate in a second state in which a distance between the second plasma generation unit and the turntable is set at a second distance shorter than the first distance. Furthermore, the separation gas is supplied to the surface of the substrate.

Method for processing a substrate and substrate processing apparatus

A method for depositing a silicon nitride film is provided. A nitrided adsorption site is formed in a recess formed in a surface of a substrate by supplying an ammonia-containing gas to the substrate for nitriding the surface of the substrate including the recess. A non-adsorption site is formed in a predetermined upper area of the recess by adsorbing a chlorine-containing gas on the nitride adsorption site in the predetermined upper area by physical adsorption. The predetermined upper area ranges from an upper end of the recess to a predetermined depth of the recess. A silicon-containing gas is adsorbed on the nitride adsorption site other than the predetermined upper area so as to deposit a silicon nitride film by a chemical reaction between the adsorbed ammonia-containing gas and the adsorbed silicon-containing gas. The nitride adsorption site includes a bottom surface of the recess.

Method for depositing a silicon nitride film

A method for depositing a silicon-containing film is performed by causing a silicon-containing gas to adsorb on a first surface of a depression formed in a second surface of a substrate by supplying the silicon-containing gas to the substrate. A silicon component contained in the silicon-containing gas adsorbed on the first surface of the depression is partially etched by supplying an etching gas to the substrate. A silicon-containing film is deposited in the depression by supplying a reaction gas reactable with the silicon component to the substrate so as to produce a reaction product by causing the reaction gas to react with the silicon component left in the depression without being etched.

Method and apparatus for gap fill using deposition and etch processes

A method of depositing a thin film on a substrate inside a vacuum chamber includes a first process that deposits a first film on the substrate, the first process including a process of supplying an active species that is obtained by changing a gas to plasma and is related to a quality of the thin film to the substrate; and a second process that deposits a second film that is the same type as that of the first film on the first film, the second process including a process of supplying the active species to the substrate so that a supply quantity of the active species per a unit film thickness is greater than a first supply quantity of the active species per the unit film thickness in the first process by adjusting a controlled parameter.

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Iwate, Japan

Masahiro Murata