Tdk Corporation

Honda Giken Kogyo Kabushiki Kaisha

Masahiro Miyazaki

Akira Furuya

Hajime Kuwajima

Hiroshi Yamazaki

Ken Unno

Kenichi Tochi

Makoto Shibata

Shigeru Shoji

Takao Noguchi

Kazuhiko Maejima

Kouichi Terunuma

Hirofumi Sasaki

Masahiro Itoh

Toshiyuki Yoshizawa

Susumu Haratani

Hitoshi Yamaguchi

Masaomi Ishikura

Shigeru Shimura

Nobuyuki Okuzawa

Tsutomu Saka

Keisuke Takasugi

Hiroshi Take

Minoru Maeda

Hideyuki Moriya

Kazuhito Wakabayashi

Tetsuo Kita

Yoshio Sase

Taiki Yamada

Masayuki Arakawa

Kazuarki Suzuki

Koji Terazono

A current sensor includes first to fourth magneto-resistive elements each having a resistance value; and a compensation current line applying a compensation magnetic field to the magneto-resistive elements. A bridge circuit is formed by the magneto-resistive elements. Resistance values of the first and third magneto-resistive elements change together in one increasing/decreasing direction. Resistance values of the second and fourth magneto-resistive elements change together in the other increasing/decreasing direction. The compensation current is generated by a potential difference between the first and second junctions in response to application of voltage between the third and fourth junctions. The compensation current line includes first to fourth line portions. Each line portion extends in the same direction as the extending direction of the magneto-resistive elements, overlaps the corresponding magneto-resistive elements, and. The current-to-be-detected is detected based on the compensation current.

Current sensor

A signal transmission device includes: an input signal conductor in which an input signal current flows and thereby generating an input signal magnetic field; a magnetically-biasing conductor in which a biasing current flows and thereby generating a biasing magnetic field; and one or more magnetoresistive elements in each of which a sensing current flows and thereby generating a self-biasing magnetic field, and each including a magnetization free layer having a magnetization direction which varies in response to the input signal magnetic field, the biasing magnetic field, and the self-biasing magnetic field. Each of the biasing magnetic field and the self-biasing magnetic field is applied to the magnetization free layer in a same direction to each other.

Non-contact signal transmission device having a magnetoresistive element for communicating between mutually insulated electrical circuits

A thin-film device incorporates a device main body and four terminal electrodes. The device main body has four side surfaces. The terminal electrodes are disposed to touch respective portions of the side surfaces. The device main body includes a lower conductor layer that is not used to form a passive element, and an upper conductor layer used to form the passive element. The upper and lower conductor layers include respective lead electrode portions that have respective end faces located at the side surfaces of the device main body. At the side surfaces of the device main body, the end face of the lead electrode portion of the lower conductor layer and the end face of the lead electrode portion of the upper conductor layer are electrically and physically connected to each other. The terminal electrodes touch these end faces and are thereby connected to the upper and lower conductor layers.

Thin-film device including a terminal electrode connected to respective end faces of conductor layers

The present invention provides an electronic device with improved characteristics and a method of making the electronic device. In a method of making an electronic device (piezoelectric device)according to the present invention, an outer edge Rof a piezoelectric filmA formed on an electrode filmA of a laminateis located inside an outer edge Rof the electrode filmA. For this reason, in removal of a monocrystalline Si substratefrom a multilayer board, where an etching solution permeates between polyimideand laminate, the etching solution circumvents the electrode filmA before it reaches the piezoelectric filmA. Namely, a route A of the etching solution to the piezoelectric filmA is significantly extended by the electrode filmA. In the method of making the electronic device, therefore, the etching solution is less likely to reach the piezoelectric filmA. It significantly suppresses a situation of dissolution of the piezoelectric filmA and realizes improvement in characteristics of the piezoelectric devicemade.

Electronic device and method of making same

The present invention provides an electronic component which is capable of effectively suppressing the characteristic deterioration of the passive element portion. An electronic component comprises a ceramic substrate, a passive element portion on the substrate, an insulator layer which is provided over the passive element portion and comprises a through-hole, a lead terminal which is fitted in the through-hole of the insulator layer and electrically connected to the passive element portion, and an external connection terminal which is electrically connected to the lead terminal. The insulator layer comprises a first face on the side of the passive element portion, a second face on the side opposite the passive element portion, and a third face which connects the first face and the second face and constitutes the peripheral face of the insulator layer, the external connection terminal is in contact with the lead terminal and the second face and the third face of the insulator layer. In a cross-section of the through-hole in a thickness direction of the substrate, a boundary line between the internal surface of the through-hole and the lead terminal is inclined in a direction moving away from a region of the third face with which the external connection terminal is in contact with an end of the boundary line on the side of the first face being taken as a fixed point.

Electronic component

The invention provides an electronic component which has an improved breakdown limit value of withstand voltage and improved insulation properties and which can be made compact and provided with a multiplicity of layers and a great capacity. The electronic component includes a first conductor having a bottom conductor formed on a substrate and a raised conductor formed to protrude from the bottom conductor, a dielectric film formed on the raised conductor, and a second conductor formed on the dielectric film to constitute a capacitor element in combination with the raised conductor and the dielectric film.

Electronic component comprising a coil conductor and a capacity element

An electronic component having: a substrate, a lower conductor layer provided on the substrate; an inorganic dielectric film that covers the lower conductor layer; and an upper conductor layer having an upper electrode portion provided on the inorganic dielectric film. The lower conductor layer has a lower electrode portion that together with the upper electrode portion and the inorganic dielectric film constitutes a capacitor, and a coil portion that constitutes an inductor. The entire inorganic dielectric film is formed integrally, and the lower conductor layer is in contact only with the substrate, inorganic dielectric film, and upper conductor layer.

Electronic component and method for manufacturing same

A terminal electrode body on a substrate is exposed relative to a resin layer, protruding out beyond the side of the resin layer. That is, the terminal electrode body is not covered by the resin layer. The electronic element is covered by an insulating layer and the terminal electrode body and the electronic element are electrically connected. Hence, an electric signal applied to the terminal electrode body can be transmitted to the electronic element. A cover layer covers the terminal electrode body and the boundary between the terminal electrode body and the resin layer.

Thin film device and method for manufacturing the same

A thin-film device incorporates a device main body and four terminal electrodes. The device main body has four side surfaces. The terminal electrodes are disposed to touch respective portions of the side surfaces. The device main body includes a lower conductor layer used to form a first passive element and an upper conductor layer used to form a second passive element. At each side surface of the device main body, an end face of the lower conductor layer and an end face of the upper conductor layer are electrically and physically connected to each other. The terminal electrodes touch the end faces of the lower and upper conductor layers, and are thereby connected to the lower and upper conductor layers.

The invention relates to an electronic component including a capacitor and provides an electronic component in which electromigration can be prevented and whose capacitor element has an accurate capacity value. The electronic component includes a bottom conductor formed on a substrate, a dielectric film formed to cover the bottom conductor, an organic insulation film formed on the dielectric film, and a top conductor formed in an opening provided in the organic insulation film over the bottom conductor, the top conductor forming a capacitor element in combination with the bottom conductor and the dielectric film.

A thin-film device comprises a substrate and a capacitor provided on the substrate. The capacitor incorporates: a lower conductor layer; a dielectric film a portion of which is disposed on the lower conductor layer; and an upper conductor layer disposed on the dielectric film. The lower conductor layer has a top surface, a side surface, and a corner portion formed by the top and side surfaces. The upper conductor layer incorporates an upper electrode portion having a bottom surface opposed to the top surface of the lower conductor layer with the dielectric film disposed in between. When seen from above the upper conductor layer, the periphery of the bottom surface of the upper electrode portion is located inside the periphery of the top surface of the lower conductor layer without touching the periphery of the top surface of the lower conductor layer.

Thin-film device and method of manufacturing same

A thin-film device incorporates: a substrate; an insulating layer, a plurality of lower conductor layers, a dielectric film, an insulating layer, a plurality of upper conductor layers and a protection film that are stacked in this order on the substrate; and a plurality of terminal electrodes. One of the terminal electrodes is connected to one of the lower conductor layers. The one of the lower conductor layers has a protruding portion that protrudes to extend more outward in a lateral direction than a side surface of the insulating layer. The one of the terminal electrodes has a concave portion that accommodates and touches at least part of the protruding portion, and touches the side surface of the insulating layer.

Thin-film device

Method of making a piezoelectric device

A flexure is provided with a main body on which a wire for energizing a head slider is disposed. Head slider is mounted at the front end of the flexure. Two piezoelectric layer units, each including layered piezoelectric elements, are disposed so that two of the units sandwich a line that extends from head slider to a base portion of an arm member. A voltage can be applied individually to each of the piezoelectric elements. The shape of the piezoelectric layer units are changed by adjusting the voltage applied to each of the piezoelectric elements, thereby moving head slider freely.

Flexible, suspension, and head gimbal assembly with piezoelectric layer units addressable by a voltage

The invention relates to a piezoelectric thin film vibrator having a piezoelectric device formed by using thin film formation technology, a fabrication method thereof, a driving apparatus and a piezoelectric motor using the same, and an object is to provide a piezoelectric thin film vibrator which can provide an excellent piezoelectric characteristic at low cost, a fabrication method thereof, a driving apparatus and a piezoelectric motor using the same. A piezoelectric thin film vibrator is configured to have a resonator which generates a flexure traveling wave, a lower electrode which is formed on the resonator, a piezoelectric thin film which is formed by epitaxial growth on the lower electrode, and a plurality of upper electrode parts which is formed on the piezoelectric thin film.

Growing community of inventors

Tokyo, Japan

Masahiro Miyazaki