Kabushiki Kaisha Toshiba

Ebara Corporation

Other

Masahiro Miyata

Hirokazu Ezawa

Hiroaki Inoue

Manabu Tsujimura

Yukio Ikeda

Naoaki Ogure

Kenji Nakamura

Soichi Homma

Tatsuo Migita

Soichi Yamashita

Moriji Matsumoto

Takeyuki Ohdaira

Mie Matsuo

Tadashi Iijima

Junichiro Yoshioka

Masayuki Uchida

Takashi Togasaki

Hidemitsu Egawa

Tsuyoshi Tokuoka

Tatsuo Shiotsuki

Johta Fukuhara

Shinzi Takeda

Takeyuki Odaira

Toru Matanabe

Koro Nagamine

Kiyoshi Muranishi

According to one embodiment, a semiconductor substrate, a metal film, a surface modifying layer, and a redistribution trace are provided. On the semiconductor substrate, a wire and a pad electrode are formed. The metal film is formed over the semiconductor substrate. The surface modifying layer is formed on a surface layer of the metal film and improves the adhesion with a resist pattern. The redistribution trace is formed on the metal film via the surface modifying layer.

Semiconductor device and manufacturing method of semiconductor device

According to one embodiment, a manufacturing method of a semiconductor device attained as follows. A dielectric layer having a first opening and a second opening reaching an electrode terminal is formed by modifying a photosensitive resin film on a substrate on which the electrode terminal of a first conductive layer is provided. Next, a second conductive layer that is electrically connected to the electrode terminal is formed on the dielectric layer that includes inside of the first opening, and a third conductive layer that has an oxidation-reduction potential of which difference from the oxidation-reduction potential of the first conductive layer is smaller than a difference of the oxidation-reduction potential between the first conductive layer and the second conductive layer is formed on the second conductive layer. Next, a dielectric layer having a third opening reaching the third conductive layer and a fourth opening reaching the electrode terminal via the second opening is formed by modifying a photosensitive resin film, and a bump that is electrically connected to the third conductive layer is formed.

Manufacturing method of semiconductor device and semiconductor device

There is provided an electroless Ni&#x2014;B plating liquid for forming, a Ni&#x2014;B alloy film on at least part of the interconnects of an electronic device having an embedded interconnect structure, the electroless Ni&#x2014;B plating liquid comprising nickel ions, a complexing agent for nickel ions, a reducing agent for nickel ions, and ammonums (NH). The electroless Ni&#x2014;B plating liquid can lower the boron content of the resulting plated film without increasing the plating rate and form a Ni&#x2014;B alloy film having an FCC crystalline structure.

Electroless Ni-B plating liquid, electronic device and method for manufacturing the same

After a copper diffusion preventing film is formed on a copper pad , a barrier metal including a titanium film , a nickel film , and a palladium film is formed on the copper diffusion preventing film . The copper diffusion preventing film formed on the copper pad suppresses diffusion of copper. Even when a solder bump is formed on the copper pad, diffusion of tin in the solder and copper is suppressed. This prevents formation of an intermetallic compound between copper and tin, so no interface de-adhesion or delamination occurs and a highly reliable connection is obtained. This structure can be realized by a simple fabrication process unlike a method of forming a thick barrier metal by electroplating. In this invention, high shear strength can be ensured by connecting a solder bump, gold wire, or gold bump to a copper pad without increasing the number of fabrication steps.

Semiconductor device having semiconductor element with copper pad mounted on wiring substrate and method for fabricating the same

A semiconductor device comprises an electrode formed above a substrate, an under bump metal (UBM) film on the electrode, the under bump metal film being in the shape of a recess, and a bump electrode embedded in the under bump metal film, the bump electrode having sides and bottom thereof surrounded by the under bump metal film.

Semiconductor device and method of manufacturing the same

There is provided an electroless Ni&mdash;B plating liquid for forming, a Ni&mdash;B alloy film on at least part of the interconnects of an electronic device having an embedded interconnect structure, the electroless Ni&mdash;B plating liquid comprising nickel ions, a complexing agent for nickel ions, a reducing agent for nickel ions, and ammonums (NH ). The electroless Ni&mdash;B plating liquid can lower the boron content of the resulting plated film without increasing the plating rate and form a Ni&mdash;B alloy film having an FCC crystalline structure.

Electroless Ni&mdash;B plating liquid, electronic device and method for manufacturing the same

A present semiconductor device includes a plurality of bump electrodes formed over a semiconductor substrate to allow signals to be input and output to and from a semiconductor element. After the formation of the bump electrodes an organic insulting film is coated on the whole surface of a resultant wafer structure, followed by a drying, a solidifying and an etch-back step. By so doing, a top area of the bump electrode is more projected than a top area of the organic insulating film. A lead is connected by a pressure and heat to the top area of the bump electrode.

Method of manufacturing a semiconductor device having a protruding bump electrode

The present semiconductor element comprises a semiconductor substrate, a wiring pad formed thereon, a layer of barrier metal formed thereon, an intermetallic compound Ag Sn formed thereon, and a protruded electrode consisting of low-melting metal formed thereon. In addition, a fabricating method of a semiconductor element comprises the steps of forming a wiring pad on a semiconductor substrate, forming a layer of barrier metal thereon, forming a metallic layer containing Ag thereon, forming a layer of low-melting metal containing Sn thereon, and melting the layer of low-melting metal containing Sn to form a protruded electrode and simultaneously to form an intermetallic compound Ag Sn at an interface between the metallic layer containing Ag and the layer of low-melting metal containing Sn. Thus, with Pb-free solder, a semiconductor element of high reliability can be obtained.

Semiconductor element and fabricating method thereof

A semiconductor device includes at least one bump electrode for inputting and outputting signals to and from the semiconductor device. The bump electrode is positioned above a semiconductor substrate with an electrode pad and metal layer disposed therebetween. A resin film covers a surface of the semiconductor substrate except at a top area of the bump electrode. The bump electrode projects a sufficient distance above a top surface of the resin film so that heat induced defects are reduced and pressure exerted on a top area of the bump electrode is absorbed to suppress occurrence of cracks in the resin film.

Semiconductor device having a protruding bump electrode

Disclosed is a method of manufacturing a semiconductor device, comprising the step of forming a pad electrode on an insulating film covering a semiconductor substrate, the step of forming a first metal layer on the pad electrode, the first metal layer being capable of forming a strong adhesive bond with the pad layer, followed by forming a second metal layer on the first metal layer, the second metal layer acting as a barrier layer and being capable of forming a strong adhesive bond with a solder, the step of forming a resist pattern on the second metal layer in a manner to cover that region which corresponds to the pad electrode, the step of etching the second metal layer using the resist pattern as a mask, the step of removing the resist pattern, the step of forming a solder layer selectively on the second metal layer, and the step of selectively etching the first metal layer using the solder layer as a mask.

Method of manufacturing semiconductor device

The improved method comprises contacting a substrate 5 at least once by a liquid containing the elements that compose a pure metal or an alloy with which the small holes or recesses 3a in the substrate 5 are to be filled or covered, whereby the liquid wets the inner surfaces of said small holes or recesses 3a while, at the same time, said pure metal or said alloy is deposited on the surface of said substrate 5. The method is capable of filling small holes or covering small recesses in the surface of the substrate 5 with improved efficiency while, at the same time, it improves the heat resistance and materials stability of the part that contains the formed filling or covering layer.

Method for filling small holes or covering small recesses in the surface

In a semiconductor device and a method for manufacturing the same according to the present invention, for example, an insulating film is deposited on a silicon substrate, and a concave groove is formed in the insulating film in accordance with a predetermined wiring pattern. Titanium and palladium are deposited in sequence on the insulating film to form a titanium film and a palladium film, respectively. A silver film is formed on the palladium film by electroplating, and a groove-shaped silver wiring layer is formed by polishing. The resultant structure is annealed at a temperature of about 700.degree. C., and an intermetallic compound is formed by alloying the titanium film and palladium film with each other. Consequently, a burying type wiring layer whose resistance is lower than that of aluminum, is constituted by the silver wiring layer and intermetallic compound.

Method for manufacturing wiring in groove

An evaporation chamber for forming fine metal particles is separated from a film formation chamber in which the substrate having a metal film such as a metal column thereon is placed during metal film deposition. The pressure of the film formation chamber is set to be lower than that of the evaporation chamber, and the fine metal particles are sprayed on the substrate by the pressure difference to form the metal column. Therefore, a wiring layer, a connection electrode for connecting the wiring layer to another wiring layer, and the like can easily be formed by a small number of steps.

Apparatus and method of manufacturing semiconductor device

Semiconductor device and method for manufacturing the same

With a semiconductor device manufacturing method, a lower-layer interconnection is formed on a circuit board on which a plurality of semiconductor chips are mounted. Using a screen plate with openings corresponding to desired positions on the lower-layer interconnection, screen printing of a metal paste is effected, and the printed metal paste is dried and calcined by heat treatment to form a metal pillar on the lower-layer interconnection. An insulating film covering the lower-layer interconnection and the metal pillar is formed so that the tip of the metal pillar may be exposed. An upper-layer interconnection is formed on the insulating film so that this layer may contact with the exposed tip of the metal pillar.

Growing community of inventors

Oita, Japan

Masahiro Miyata