Sony Corporation

Masahiro Mitsunaga

Yuji Ibusuki

Shinichi Tamari

A semiconductor device includes a buffer layer formed with a semiconductor adapted to produce piezoelectric polarization, and a channel layer stacked on the buffer layer, wherein a two-dimensional hole gas, generated in the channel layer by piezoelectric polarization of the buffer layer, is used as a carrier of the channel layer. In a complementary semiconductor device, the semiconductor device described above and an n-type field effect transistor are formed on the same compound semiconductor substrate. Further, a semiconductor device manufacturing method includes forming a compound semiconductor base portion, forming a buffer layer on the base portion, forming a channel layer on the buffer layer, forming a date on the channel layer, and forming a drain and source with the gate therebetween on the channel layer.

Semiconductor device and manufacturing method of the same

A semiconductor device includes a buffer layer formed with a semiconductor adapted to produce piezoelectric polarization, and a channel layer stacked on the buffer layer, wherein a two-dimensional hole gas, generated in the channel layer by piezoelectric polarization of the buffer layer, is used as a carrier of the channel layer. In a complementary semiconductor device, the semiconductor device described above and an n-type field effect transistor are formed on the same compound semiconductor substrate. Further, a semiconductor device manufacturing method includes forming a compound semiconductor base portion, forming a buffer layer on the base portion, forming a channel layer on the buffer layer, forming a gate on the channel layer, and forming a drain and source with the gate therebetween on the channel layer.

A semiconductor device includes a buffer layer formed with a semiconductor adapted to produce piezoelectric polarization, and a channel layer stacked on the buffer layer, wherein a two-dimensional hole gas, generated in the channel layer by piezoelectric polarization of the buffer layer, is used as a carrier of the channel layer. On a complementary semiconductor device, the semiconductor device described above and an n-type field effect transistor are formed on the same compound semiconductor substrate. Also, a level shift circuit is manufactured by using the semiconductor device. Further, a semiconductor device manufacturing method includes forming a compound semiconductor base portion, forming a buffer layer on the base portion, forming a channel layer on the buffer layer, forming a gate on the channel layer, and forming a drain and source with the gate therebetween on the channel layer.

A semiconductor device includes: an epitaxial substrate formed by stacking a plurality of kinds of semiconductors over one semiconductor substrate by epitaxial growth; a field effect transistor of a first conductivity type formed in a first region; a field effect transistor of a second conductivity type formed in a second region; and a protective element formed in a third region. The protective element includes: a first stacking structure formed by etching the epitaxial substrate by vertical etching that proceeds in a stacking thickness direction; and a second stacking structure formed by etching the epitaxial substrate by vertical etching that proceeds in a stacking thickness direction. The protective element has two PN junctions on a current path formed between an upper end of the first stacking structure and an upper end of the second stacking structure via a base part of the first stacking structure and the second stacking structure.

Semiconductor device, manufacturing method thereof, protective element, and manufacturing method thereof

A semiconductor device including at least a p-channel field-effect transistor region formed above a compound semiconductor substrate. The p-channel field-effect transistor region includes an undoped buffer layer; a p-type channel layer formed in contact with the buffer layer; a p-type source region and a p-type drain region formed in the channel layer, being separated with each other; and an n-type gate region formed above the channel layer and between the source region and the drain region. The buffer layer is formed having either a multilayer structure including a hole diffusion control layer with a band gap larger than the channel layer, or a single layer structure including only the hole diffusion control layer.

Growing community of inventors

Kagoshima, Japan

Masahiro Mitsunaga