Sharp Kabushiki Kaisha Corporation

Sakai Display Products Corporation

Sharp Corporation

Masahiro Mitani

Kohzoh Nakamura

Kiyoshi Minoura

Yozo Narutaki

Hiroshi Tsuchiya

Katsuhiko Kishimoto

Shinichi Kawato

Yuhki Kobayashi

Shinji Shimada

Makoto Yokoyama

Tomohiro Kimura

Hisashi Watanabe

Toshihiro Yanagi

Yutaka Takafuji

Naoki Ueda

Kohhei Tanaka

Youhei Nakanishi

Seiichi Uchida

Ryuzo Yuki

Yasumori Fukushima

Masayuki Kanehiro

Keiichi Yamamoto

Takayuki Nishiyama

Fumiyuki Kobayashi

Seiji Muraoka

Aya Nakatani

In a display device including organic EL elements OLED, a p-channel switching transistor Tis connected at a conductive terminal to a channel region of a p-channel drive transistor T. When holes are trapped in trap levels within the channel region of the drive transistor Twhile the display device presents a white display image, this configuration enables the holes to be extracted through the switching transistor Tto an initialization line Vini. Consequently, a drive current flows through the drive transistor Tin accordance with a data voltage, resulting in no perceptible afterimage even when a gray display image is presented during an immediately subsequent frame.

Display device

Provided is a scanning-line driving circuit configured with a plurality of unit circuits cascaded in stages and integrally formed with a display panel. The unit circuit includes a first transistor, a resistor, a second transistor, and an output transistor. The first transistor has a first conductive electrode supplied with a first-level voltage and a second conductive electrode connected to a first node. The resistor is connected to the first node at a first terminal. The second transistor has a first conductive electrode supplied with a second-level voltage and a second conductive electrode connected to a second terminal of the resistor. The output transistor has a control electrode connected to the first node and a first conductive electrode connected to an output terminal. The resistor is formed in a semiconductor layer. The unit circuit further includes an upper electrode formed above the resistor. This configuration allows the scanning-line driving circuit to prevent an operation failure due to a change in characteristics of the resistor in the unit circuit.

Scanning-line driving circuit and display device provided with same

In the present embodiment, a sealing agent () sealing two substates contains a low melting-point glass material and is adhered to each of a first substrate () and a second substrate (), a barrier rib (), which is formed in such a manner as to surround the outer periphery of an electronic element (), is disposed between the sealing agent () and the electronic element (), and between the first substrate () and the second substrate (), and the sealing agent () is spaced apart from the barrier rib (). As a result, a deterioration of the electronic element, caused by the heat produced when sealing, may be prevented while the electronic element formed between the two substrates is protected from moisture and oxygen.

Substrate sealing structure body, and, display device and production method therefor

A display device according to one embodiment of the present invention is provided with a plurality of pixels which are arranged as a matrix on a substrate, and each of which is provided with a liquid crystal display element and an organic EL display element. The organic EL display element is provided with a positive electrode and a negative electrode, which are formed so as to be electrically separated from a pixel electrode and a counter electrode of the liquid crystal display element. Each one of the plurality of pixels is provided with: a first transistor which changes the magnitude of a current to be supplied to the organic EL display element on the basis of the potential of a first bus line; a second transistor which electrically separates the first bus line and the pixel electrode from each other on the basis of the potential of a third bus line; and a third transistor which electrically connects the first transistor and the second transistor with the first bus line on the basis of the potential of a second bus line. A method for driving a display device according to one embodiment of the present invention reduces the potential difference between the pixel electrode and the counter electrode before turning off the second transistor during switching from display by means of the liquid crystal display element to display by means of the organic EL display element.

Display device and method for driving display device

A reflective liquid crystal display device () including a reflection electrode (), a liquid crystal layer (), and a counter electrode () is formed above an insulating layer () in a first region (R) of a TFT substrate (). An organic EL display device () including a first electrode (), an organic layer (), and a second electrode () is formed on the insulating layer () of the TFT substrate () in a second region (T). A coating layer () is formed at least on a surface of the organic EL display device () so as to wrap the second electrode () and the organic layer () of the organic EL display device (). A part of the coating layer () is in contact with the insulating layer (). As a result, a complex display apparatus capable of preventing the organic layer from deteriorating and excellent in reliability can be obtained.

Display apparatus

An active side slit and an FPC side slit each extend through a second inorganic insulating film and reach a first inorganic insulating film. The active side slit is formed between an active region and an IC chip mounted region of an EL device in plan view and also, the IC chip mounted region is sandwiched between the active side slit and the FPC side slit.

A display apparatus according to one embodiment comprises pixels each comprising a liquid crystal display element (LC element) and an organic EL display element (EL element). The EL element comprises an anode and a cathode electrically separated from each electrode of the LC element. Each pixel comprises a first transistor which changes the magnitude of a current flowing through the EL element based on the potential of a first bus line; a second transistor which electrically separates the first bus line and the LC element; and a third transistor which electrically connects the first and second transistor with the first bus line. A method for driving a display device according to one embodiment reduces the potential difference between the pixel electrode and the counter electrode before turning off the second transistor during switching from display by the LC element to display by the EL element.

The present application discloses a display device and a driving method thereof using the SSD method capable of charge with the data voltage in the pixel circuit and sufficient internal compensation even if the high resolution of a display image is improved.

A liquid crystal display device (a display device) includes a liquid crystal panel (a display panel) having an outer peripheral edge portion having a substantially circular shape and including linear edge portions that are linear at a part of the outer peripheral edge portion, and flexible printed circuit boards (mounting components) mounted in an outer portion of the liquid crystal display panel to match arrangement of the linear edge portions in a circumferential direction.

A liquid crystal display device includes a liquid crystal panel, a panel driver board, and flexible circuit boards. The liquid crystal panel has a substantially round shape and includes linear edge sections formed by linearly cutting out outer edge portions. The panel driver board is configured to supply signals related to image display to the liquid crystal panel. The flexible circuit boards include first ends and second ends. The first ends are mounted to the liquid crystal panel aligned with the linear edge sections with respect to the circumferential direction in a non-display area. The second ends are mounted to the panel driver board. Portions of the flexible circuit boards joining the first ends and the second ends have bending shapes in a plan view.

According to a semiconductor substrate (), a space (A) between a plurality of Si thin film (), which are provide apart from one another on the insulating substrate (), is (I) larger than a difference between elongation of part of the insulating substrate which part corresponds to the space (A) and elongation of each of Si wafers () when a change is made from room temperature to 600&#xb0; C. and (II) smaller than 5 mm. This causes an increase in a region of each of a plurality of semiconductor thin films which region has a uniform thickness, and therefore prevents transferred semiconductor layers and the insulating substrate from being fractured or chipped.

Semiconductor substrate, thin film transistor, semiconductor circuit, liquid crystal display apparatus, electroluminescent apparatus, semiconductor substrate manufacturing method, and semiconductor substrate manufacturing apparatus

A semiconductor substrate () includes an insulating substrate (), a plurality of semiconductor thin films () which are arranged on the insulating substrate () to be separated from each other, and a conductive film () which is arranged between the semiconductor thin films (). Therefore, it is possible to uniformly thin the film thickness of each of the semiconductor thin films.

Semiconductor substrate, method of manufacturing semiconductor substrate, thin film transistor, semiconductor circuit, liquid crystal display apparatus, electroluminescence apparatus, wireless communication apparatus, and light emitting apparatus

Film thickness variations are prevented in a plurality of single crystal semiconductor films separated at a fragile layer reliably and transferred to a base substrate. A method for manufacturing a SOI substrate () in which a plurality of SOI layers () are disposed on a base substrate () includes the steps of bonding a plurality of SOI wafers (), in which an oxide film (), a SOI layer (), a BOX layer (), and a Si support substrate () having a fragile layer () formed by ion irradiation in the inside and being made from a single crystal semiconductor material are stacked sequentially, to a base substrate () in such a way that the oxide film () is located on the side close to the base substrate (), applying heat to the plurality of SOI wafers () to separate part of the Si support substrate () at the fragile layer () and transfer the oxide film (), the SOI layer (), the BOX layer (), and a single crystal Si layer () which is part of the Si support substrate () to the base substrate (), and subjecting the base substrate () to an etch back treatment to expose the BOX layer () by etching the transferred single crystal Si layer ().

Method for manufacturing semiconductor substrate, substrate for forming semiconductor substrate, stacked substrate, semiconductor substrate, and electronic device

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Sakai, Japan

Masahiro Mitani