Ulvac, Inc.

Toyota Jidosha Kabushiki Kaisha

Masahiro Matsumoto

Atsuhito Ihori

Noriaki Tani

Masashi Kubo

Makoto Arai

Toshihiro Suzuki

Manabu Harada

Tetsushi Fujinaga

Harunori Iwai

Hidenori Yanagitsubo

Koji Takahashi

Tetsuya Shimada

Yoshihito Mizuno

Shinji Koike

Susumu Ikeda

Hideyuki Odagi

Minoru Dogi

Masahiro Kinokuni

Fumitsugu Yanagihori

Eriko Mase

Kenji Iwata

Takashi Yoshida

Yoshinao Sato

A substrate processing device includes a housing connected to ground, a cathode stage that supports a substrate, an anode unit, and a gas feeding unit that feeds gas toward the first plate. The cathode stage is applied with voltage for generating plasma. The anode unit includes a first plate including first through holes and a second plate including second through holes that are larger than the first through holes. The second plate is located between the first plate and the cathode stage. The first plate produces a flow of the gas through the first through holes. The gas that has passed through the first through holes flows through the second through holes into an area between the second plate and the cathode stage. A distance between the first plate and the second plate is 10 mm or greater and 50 mm or less.

Substrate processing device

A touch panel of the present invention includes a touch panel substrate, a cover substrate provided to overlap the touch panel, and a connection part including a scattering layer laminated from the cover substrate side toward the touch panel substrate side and is provided between the touch panel substrate and the cover substrate in an area other than a display area.

Touch panel, method of manufacturing touch panel, and optical thin film

A thin substrate processing device include a substrate processing unit configured to process a thin substrate, and a cooling unit configured to cool the thin substrate when the substrate processing unit is processing the thin substrate.

Thin substrate processing device

A film formation method is one for forming an organic layer comprising a fluorine-containing resin on an inorganic layer () formed on a substrate and comprising an inorganic substance. In the method, for the formation of the inorganic layer, a reactive sputtering procedure using water vapor as a reactive gas is carried out to form the inorganic layer on the substrate. Subsequently, the organic layer is formed on the inorganic layer. A film formation device enables the implementation of the film formation method.

Film formation method and film formation apparatus

A touch panel of the present invention includes: a cover substrate; a connector being provided on an area of the cover substrate other than a display area, and including a color layer and a shield layer, the shield layer being formed from a multilayer structure, the multilayer structure being configured so that a metal layer and a dielectric layer which is thicker than the metal layer are alternately laminated; and a touch panel substrate being arranged to face the cover substrate with the connector interposed therebetween.

Touch panel, method of producing the same, optical thin film substrate and method of producing the same

There is provided a film forming apparatus which is capable of forming a film on both surfaces of a substrate by sputtering continuously with high efficiency by restraining a rise in temperature of the substrate to a predetermined value or higher. In a film forming chamberthe pressure of which is controlled, while a rotating drumis rotated by the driving of a drive motor, a film is formed on the top surface of a substrateon a substrate trayheld on a substrate holderby cathodesandfor outer surface to which a d.c. voltage or an a.c. voltage or a high-frequency voltage is applied, and also a film is formed on the back surface of the substrateon the substrate trayheld on the substrate holderby cathodesandfor inner surface to which a d.c. voltage or an a.c. voltage or a high-frequency voltage is applied, by which a high-quality film is formed on both surfaces of the substrateby sputtering continuously with high efficiency by restraining a rise in temperature of the substrate to a predetermined value or higher.

Film forming apparatus

A semiconductor device is provided with a silicon substrate, with a surface for soldering the silicon substrate to a ceramic substrate, and an electrode making contact with the surface of the silicon substrate. The electrode comprises a first conductor layer, a second conductor layer, and a third conductor layer. The first conductor layer makes contact with the surface of the silicon substrate and includes aluminum and silicon. The second conductor layer makes contact with the first conductor layer and includes titanium. The third conductor layer is separated from the first conductor layer by the second conductor layer and includes nickel.

Semiconductor devices and method of manufacturing them

Growing community of inventors

Chigasaki, Japan

Masahiro Matsumoto