Tokyo Ohka Kogyo Co., Ltd.

San-Apro Limited

Masahiro Masujima

Kenji Maruyama

Kazuyuki Nitta

Satoshi Shimatani

Toshihiro Yamaguchi

Yusuke Nakagawa

Ken Miyagi

Kousuke Doi

Hirofumi Imai

Jun Koshiyama

Masaki Kurihara

Takako Hirosaki

Satoshi Niikura

Atsushi Sawano

Shinichi Hidesaka

Hiroshi Shimbori

Yuriko Shirai

Takuto Nakao

Yuji Nakamura

Sachiko Yoshizawa

Takahiro Kondo

Kenichi Yamagata

Tomoyuki Shibagaki

A negative photosensitive resin composition containing an epoxy group-containing resin and a cationic polymerization initiator which includes a sulfonium salt represented by General Formula (I0). In Formula (I0), R1 and R2 represent an aryl group, a heterocyclic hydrocarbon group, or an alkyl group. R3 to R5 are an alkyl group, a hydroxy group, an alkoxy group, an alkylcarbonyl group, an arylcarbonyl group, an acyloxy group, an arylthio group, an alkylthio group, an aryl group, a heterocyclic hydrocarbon group, an aryloxy group, a hydroxy(poly)alkyleneoxy group, or a halogen atom. k is an integer of 0 to 4, m is an integer of 0 to 3, and n is an integer of 1 to 4. A is a group represented by —S—, —O—, —SO—, —SO—, or —CO— Xrepresents a monovalent polyatomic anion.

Negative photosensitive resin composition, pattern formation method, and laminated film

The anti-reflection film forming material according to the present invention includes (a) a water soluble resin having a vinyl acetate constituent unit, and (b) a compound having a constituent unit represented by the following general formula. Wherein, Rand Rrepresent a direct bond or a methylene chain; Rand Rrepresent a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or a group represented by &#x2014;(CH)&#x2014;O&#x2014;R&#x2014;R; and at least one of Rand Ris a group represented by &#x2014;(CH)&#x2014;O&#x2014;R&#x2014;R, wherein: Rrepresents a direct bond or an alkylene chain having 1 to 10 carbon atoms which may be interrupted with &#x2014;O&#x2014;; Rrepresents an alkyl group having 1 to 10 carbon atoms in which a portion or all hydrogen atoms are substituted with a fluorine atom; and n represents an integer of 0 to 10. Wherein, the total number of carbon atoms present in Rand Ris 1 or 2.

Anti-reflection film forming material, and method for forming resist pattern using the same

A positive resist composition for forming a thick-film resist having a film thickness of 1 to 15 &#x3bc;m, the composition comprising: a resin component (A) that includes a polymer compound (A1), which has a weight average molecular weight of 20,000 to 50,000, and includes a structural unit (a1) derived from a hydroxystyrene and a structural unit (a2) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group, an acid generator component (B) that generates acid upon exposure and includes an onium salt-based acid generator having an anion moiety represented by general formula (I): R&#x2033;SO(wherein, R&#x2033; represents a linear or branched alkyl group or fluoroalkyl group of 4 carbon atoms), and a nitrogen-containing organic compound (D) that includes a tertiary aliphatic amine.

Positive resist composition for forming thick-film resist, thick-film resist laminate, and method of forming resist pattern

The present invention provides a chemical amplification type positive photoresist composition which is excellent in storage stability as a resist solution in a bottle. A novolak resin or a hydroxystyrenic resin is reacted with a crosslinking agent to give a slightly alkali-soluble or alkali-insoluble resin having such a property that solubility in an aqueous alkali solution is enhanced in the presence of an acid, which is then dissolved in an organic solvent, together with (B) a compound generating an acid under irradiation with radiation to obtain a chemical amplification type positive photoresist composition wherein the content of an acid component is 10 ppm or less.

Chemically amplified positive photo resist composition and method for forming resist pattern

To provide a chemical amplification type positive photoresist composition, which has high sensitivity, high heat resistance and high resolution (high contrast) and is capable of suppressing an undulation phenomenon, and a method for formation of a resist pattern, a chemical amplification type positive photoresist composition comprising (A) an alkali soluble resin comprising a hydroxystyrene constituent unit (a1) and a styrene constituent unit (a2), (B) a crosslinking agent, (C) a photo acid generator, and an organic solvent is prepared and a resist pattern is formed by using the same.

Chemical amplified positive photo resist composition and method for forming resist pattern

Growing community of inventors

Kawasaki, Japan

Masahiro Masujima