Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Nuvoton Technology Corporation Japan

Masahiro Maeda

Shigeru Morimoto

Masatoshi Kamitani

Katsuhiko Kawashima

Morio Nakamura

Yorito Ota

Osamu Ishikawa

Masato Seki

Hidetoshi Ishida

Hiroshi Komori

Takayuki Yoshida

Keiichi Murayama

Shingo Matsuda

Hiroshi Sugiyama

Hirotaka Miyamoto

Masazumi Yamazaki

Masatosi Kamitani

Motonari Katsuno

A high-frequency amplifier includes: a carrier amplifier which amplifies a first signal; a peak amplifier which amplifies a second signal; a first matching circuit which is connected to the output terminal of the carrier amplifier; a second matching circuit which is connected to the output terminal of the peak amplifier; a first transmission line which is connected between the first matching circuit and the second matching circuit, and has an electric length that is less than ¼ of the wavelength of the center frequency of a predetermined frequency band. The phase rotation by a series inductor which is included in each of the first matching circuit and the second matching circuit and has one end that has been grounded is opposite to the phase rotation by the first transmission line.

High-frequency amplifier

A high-frequency power amplifier that amplifies a high-frequency input signal and outputs a signal having one power selected from a plurality of powers includes a high output route that is a circuit, which amplifies the input signal and outputs a signal of a high power, and a medium output route that is a circuit, which amplifies the input signal and outputs a signal of a medium power. The high output route includes a high-output amplifier that amplifies the input signal, an output matching circuit that is connected to an output node of the high-output amplifier, and a switch element that is connected to an output node of the output matching circuit. The medium output route includes a medium-output amplifier that amplifies the input signal and a switch element that is connected between an output node of the medium-output amplifier and an output node of the output matching circuit.

High-frequency power amplifier

A constant-voltage circuit includes: first and second field-effect transistors; a first node connected to the drains of the first and second field-effect transistors; a second node connected to the gates of the first and second field-effect transistors; a bipolar transistor whose collector is connected to the second node; a resistor connected to the source of the second field-effect transistor and the collector of the bipolar transistor; and a bias circuit that is connected to the source of the second field-effect transistor and supplies a bias voltage to the base of the bipolar transistor, wherein a power supply is connected to the first node and a constant voltage is outputted from the source of the first field-effect transistor.

Constant-voltage circuit

The radio frequency power amplifier is connected between an other end of the first switching element and an other end of the second switching element, supplies power to a second amplifier via the first switching element and a second matching circuit, and includes a first power supply line for supplying power to the third amplifier via a second switching element and a third matching circuit, and the other end of the first switching element is connected to an input node of the first matching circuit, the other end of the second switching element is connected to the input node of the first matching circuit via the first power supply line, and an impedance of an output side of the RF power amplifier as viewed from an output node of the third amplifier is higher than an impedance of the RF power amplifier as viewed from an output node of the second amplifier.

Radio frequency power amplifier

A radio frequency power amplifier includes an input terminal to which a radio frequency signal is applied; a first hetero-bipolar transistor (HBT), which amplifies the radio frequency signal; a second HBT, which amplifies the radio frequency signal; a matching circuit connected to an output node of the second HBT; a switch connected to an output node of the matching circuit; and an output matching circuit connected to an output node of the first HBT. The output node of the switch is connected to the output node of the first HBT via the output matching circuit, and an impedance looking into an output side of the radio frequency power amplifier from the output node of the switch is higher than an impedance looking into the output side of the radio frequency power amplifier from the output node of the first HBT.

A bipolar transistor and a radio frequency amplifier circuit capable of preventing thermal runaway in the bipolar transistor without affecting the radio frequency amplifier circuit, which includes: a direct-current (DC) bias terminal to which a DC bias is supplied; a DC base electrode connected to the DC terminal; a radio frequency (RF) power terminal to which a radio frequency signal is supplied; an RF base electrode connected to the RF terminal; and a base layer connected to the DC base electrode and the RF base electrode.

Bipolar transistor and radio frequency amplifier circuit

A base mesa finger (an emitter ledge layer, a base layer, and a collector layer) is interposed between two collector fingers (collector electrodes), and on the base mesa finger, a base finger (a base electrode) and two emitter fingers (an emitter layerand an emitter electrode) on both sides of the base finger, are formed. The two emitter fingers are formed symmetric with respect to the base finger as a reference.

Bipolar transistor and power amplifier

A power amplifier amplifies an input signal having a fundamental frequency of which band width ranges between a first fundamental frequency Fand a second fundamental frequency F. The power amplifier includes a power amplifier transistor for amplifying the input signal and an output matching circuit for suppressing a harmonic component included in an output signal from the power amplifier transistor. The output matching circuit includes: a first second-order harmonic series resonant circuit including a first inductor and a first capacitor and having a frequency twice as large as Fas a resonance frequency; and a second second-order harmonic series resonant circuit including a second inductor and a second capacitor and having a frequency twice as large as Fas a resonance frequency.

Power amplifier

A high-frequency power amplifier device including: a power amplifier circuit which amplifies a high-frequency signal; an output matching circuit connected to an output side of the power amplifier circuit; and a high-frequency circuit connected to an output side of the output matching circuit, which is designed so that X[f] satisfies the relationship expressed as X[L]&#x3c;X[H], where j denotes an imaginary number, f denotes a frequency, an impedance of the high-frequency circuit viewed from the output matching circuit is defined as Z[f]=R[f]+jX[f], L denotes a lower limit of the frequency, and H denotes an upper limit of the frequency.

High-frequency power amplifier device

The present invention provides a compact and low-cost high-frequency power amplifier including GaAs heterojunction bipolar transistors (HBTs) but having a low level of noise in the transmission band. In the high-frequency power amplifier of the present invention, a chip capacitoris connected at one end to an upstream stage bias circuitvia a bonding wire B, and grounded at the other end. Also, a chip inductoris connected to a base electrode of a high-frequency signal amplification HBTvia a bonding wire B. In the high-frequency power amplifier of the present invention, the chip capacitorcauses noise generated within the upstream stage bias circuitto flow to the ground, thereby reducing noise in the reception band. Also, the chip inductorreduces a power loss of a high-frequency signal which is caused because the high-frequency signal flows to the ground.

There is provided a high-frequency GaAs power FET element with high performance, capable of suppressing an abnormal oscillation. Thin film resistors are provided so as to be connected electrically between incoming distributed constant lines connected electrically to FET chips, and thin film resistors are provided so as to be connected electrically between outgoing distributed constant lines electrically connected to FET chips. An unnecessary roundabout power is consumed by the thin film transistors in the incoming distributed constant lines and the outgoing distributed constant lines.

High-frequency semiconductor device

An RF power amplifier has a pair of power amplifying elements for receiving first and second distributed signals resulting from distribution of an input signal from the outside and having the characteristics of the same amplitude and opposite phases, performing power amplification with respect to each of the first and second distributed signals that have been received, and outputting the first and second amplified signals and a pair of transmission lines connected correspondingly to the pair of power amplifying elements. The pair of transmission lines have a pair of protruding portions provided at respective edge portions thereof disposed in opposing relation. The pair of protruding portions are disposed in mutually spaced apart and opposing relation to compose a capacitor.

RF power amplifier

A package according to the present invention includes: a support for mounting a semiconductor component on the upper surface thereof; a positioning control plate, which is secured to the support and includes an opening or a notch; and a lead provided on the support for establishing electrical continuity between the semiconductor component mounted on the support and an external component. The positioning control plate houses at least a lower part of the semiconductor component inside the opening or the notch, thereby controlling a position of the semiconductor component on the support.

Package, semiconductor device and method for fabricating the semiconductor device

The radio frequency module of the present invention includes an insulating substrate having a first metal film on a first principal surface thereof and a second metal film on a second principal surface thereof opposed to the first principal surface and a semiconductor device. The semiconductor device is thermally and electrically coupled to the second metal film, and a thickness of the second metal film is larger than that of the first metal film.

Growing community of inventors

Osaka, Japan

Masahiro Maeda