Kabushiki Kaisha Toshiba

Kioxia Corporation

Sanyo Denki Co., Ltd.

Nec Corporation

Toshiba Memory Corporation

Hitachi, Ltd.

Mitsubishi Hitachi Power Systems, Ltd.

Hitachi Engineering Services Co., Ltd.

Masahiro Koike

Akira Nishiyama

Yasushi Nakasaki

Michael Arnaud Quinsat

Yasuaki Ootera

Masato Koyama

Tsuyoshi Kondo

Yuichiro Mitani

Tsutomu Nakanishi

Yuuichi Kamimuta

Nobuyuki Umetsu

Megumi Yakabe

Susumu Hashimoto

Shiho Nakamura

Akira Takashima

Tsunehiro Ino

Masaki Kado

Masamichi Suzuki

Agung Setiadi

Tatsuo Shimizu

Toshiyuki Nakamura

Naoki Yasuda

Katsumichi Ishihara

Takahisa Toda

Yo Muramatsu

Naoya Inada

Shigeyuki Hirayama

Hikaru Urushimoto

Tadashi Kai

Yoshihiro Ueda

Junichi Ito

Kazuhiro Suzuki

Tadaomi Daibou

Naoharu Shimomura

Daisuke Matsushita

Tsutomu Tezuka

Yutaka Suzuki

Toshiki Ogawara

Tetsuya Matsui

Junichi Gokurakuji

Hideki Satake

Takamitsu Ishihara

Yuuichiro Mitani

Shigeto Fukatsu

Tomoaki Ikeda

Chihiro Harada

Kouichi Muraoka

Shuhei Miura

Izumi Hirano

Shogo Itai

Mitsuru Odakura

Kojirou Kodaira

Takumi Okazaki

Souma Araki

Kenji Kumasaka

Katsumi Isaka

Kenji Tayama

Yuuji Adachi

Masao Shingu

Akiko Nara

Masayuki Uwabo

Akiko Masada

Masaya Ichikawa

A memory includes: a magnet including a first and second portions adjacent in a first direction. The first portion has a first dimension in a second direction at a first position at which a dimension of the magnet in the second direction is maximum, the second direction perpendicular to the first direction, the second portion has a second dimension in the second direction at a second position at which a dimension of the magnet in the second direction is minimum, the second dimension smaller than the first dimension, the first portion is continuous to the second portion via a third position between the first and second positions, a curve corresponding to an outer of the magnet extends between the first and third positions, and the curve passes through a side closer to the central axis of the magnet than a straight line connecting the first and second positions.

Magnetic memory

A semiconductor memory device includes a first conductive layer, a semiconductor layer extending in a first direction and being opposed to the first conductive layer, and a gate insulating film disposed between the first conductive layer and the semiconductor layer. The first conductive layer includes a first region, a second region disposed between the first region and the gate insulating film, and a third region disposed between the first region and the first interlayer insulating layer. The first to the third regions contain a metal. The third region contains silicon (Si). The first region does not contain silicon (Si) or has a lower silicon (Si) content than a silicon (Si) content in the third region. The second region does not contain silicon (Si) or has a lower silicon (Si) content than the silicon (Si) content in the third region.

Semiconductor memory device and method of manufacturing the same

A magnetic memory according to an embodiment includes: a first wiring and a second wiring; a first magnetic member having a first portion electrically connected to the first wiring and a second portion electrically connected to the second wiring, the first magnetic member extending in a first direction from the first portion to the second portion; a third wiring that is electrically insulated from the first magnetic member; and a control circuit electrically connected to the first wiring, the second wiring, and the third wiring, the control circuit supplying a current pulse, in which a trailing time is longer than a rising time, to the third wiring.

A magnetic memory according to an embodiment includes: a magnetic member including a first to third magnetic parts, the first magnetic part including a first portion and a second portion and extending in a first direction from the first portion to the second portion, the second magnetic part extending in a second direction that crosses the first direction, and the third magnetic part connecting the second magnetic part and the first portion; a first nonmagnetic metal layer arranged along the third magnetic part, the first nonmagnetic metal layer including a first end portion on a side of the second portion, a position of the first end portion along the first direction being between positions of the first and second portions along the first direction; and a first and second electrodes supplying a current between the first and second magnetic parts via the third magnetic part.

According to one embodiment, a magnetic memory includes a magnetic body with two portions of a first dimension in a first direction which are spaced from each other a second direction and another portion that has a second dimension less than the first dimension in the first direction, which is between the two other portions. A circuit supplies a shift pulse to the magnetic body. The shift pulse includes a first pulse and a second pulse and moves a domain wall in the magnetic body along the second direction. The first pulse has a first pulse width. The second pulse has a second pulse width less than the first pulse width. The second pulse is supplied to the magnetic body after the first pulse.

Magnetic memory with circuit to supply shift pulse to move a domain wall in a magnetic body

According to one embodiment, a device includes a member including a first portion having a first dimension in first direction, a second portion spaced from the first portion and having a second dimension in the first direction, a third portion between the first and second portions and having a third dimension in the first direction, and a fourth portion between the first and third portions and having a fourth dimension in the first direction; and a circuit to supply a shift pulse including first and second pulses to the member and move a domain wall in the member. The third dimension is less than the first dimension. The second and fourth dimensions are less than the third dimension. A second value of the second pulse is less than a first value of the first pulse.

According to one embodiment, a magnetic memory device includes a stacked structure including first and second magnetic layers having variable and fixed magnetization directions, respectively, and a nonmagnetic layer provided between the first and second magnetic layers and containing a first compound containing first cationic and anionic elements, and a predetermined-material layer provided around side surfaces of the stacked structure and containing a second compound containing second added cationic and second added anionic elements. An absolute value of a valence number (ionic valency) of the second added cationic element is less than that of the first cationic element, and an absolute value of a valence number (ionic valency) of the second added anionic element is less than that of the first anionic element.

Magnetic memory device and manufacturing method of the same

A measurement device includes: a casing that includes a first air duct with an air inlet; a straightening grid; a first chamber; an opening plate including an opening; a second chamber; pressure sensors configured to measure a first pressure, a second pressure, and a third pressure, the first pressure being air pressure from the air inlet to the straightening grid, the second pressure being air pressure in the first chamber, the third pressure being air pressure in the second chamber; a specific opening configured to allow the opening plate to be replaceable; an open/close portion configured to open and close the specific opening; and a duct forming a second air duct between the measurement device and a measurement target.

Measurement device for measuring airflow volume and a ventilation resistance and having a specific opening for allowing an opening plate to be replaceable and differential pressure measurement arrangement

A measurement device for measuring an airflow volume of a wind-blowing apparatus includes, a housing that includes an air duct with an air inlet and an air outlet, the air inlet being configured to take in air, the air outlet being configured to send out the taken air, an opening member installed inside the air duct, the opening member including an opening allowing the air taken from the air inlet to pass therethrough, pressure sensors configured to measure air pressures before and after the air passes through the opening member in the air duct, and an orifice provided on the opening member to change a size of the opening.

Measurement device having variable opening orifice for measuring airflow volume and ventilation resistance of wind blowing apparatus

A fan frame accommodates a fan for blowing air or cooling and has a hole into which a tapping screw is fixed. The hole has a first hole portion opened in an attachment surface onto which a supporting member fixed by the tapping screw is attached and a second hole portion extending from the first hole portion and having a predetermined inner diameter. The first hole portion of the hole is formed to have a diameter larger than that of the second hole portion.

Fan frame

According to one embodiment, a semiconductor device includes a semiconductor layer including Ge; and a metal Ge compound region provided in a surface portion of the semiconductor layer. Sn is included in an interface portion between the semiconductor layer and the metal Ge compound region. A lattice plane of the semiconductor layer matches with a lattice plane of the metal Ge compound region.

Semiconductor device and method for manufacturing the same

An axial flow fan includes a first lead wire engaging portion configured to be engaged with a plurality of lead wires such that the lead wires are pulled out therefrom into an outer space defined between a first flange and a second flange of a fan housing, a second lead wire engaging portion configured to be engaged with the plurality of lead wires such that the lead wires are pulled out toward the other side in the axial direction where the second flange is positioned, and a third lead wire engaging portion configured to be engaged with the plurality of lead wires such that the lead wires are pulled out in the axial direction toward one side where the first flange is positioned. The third lead wire engaging portion is formed in the first flange at a given distance from the first lead wire engaging portion.

Axial flow fan

A transmitting section of the present invention initiates transmission of a second video continuously after completing transmission of a first video being transmitted, in a case that a reproduction position of the first video being transmitted is beyond an end point of the first video, when a video recording start time of a second video stored in a video storage section and a video recording end time of the first video being transmitted coincide within a predetermined time difference.

Time-shifted viewing system, time-shifted viewing method, and time-shifted viewing apparatus and program

An axial flow fan provided herein allows for a wide range of selection for placement of the fan and wiring of the lead wires. The axial flow fan includes a first lead wire engaging portionconfigured to be engaged with a plurality of lead wiressuch that the lead wires are pulled out therefrom into an outer space OS defined between a first flangeand a second flangeof a fan housing, a second lead wire engaging portionconfigured to be engaged with the plurality of lead wiressuch that the lead wires, which have been engaged with the first lead wire engaging portionand pulled out therefrom into the outer space OS, are then pulled out toward the other side in the axial direction where the second flangeis positioned, and a third lead wire engaging portionconfigured to be engaged with the plurality of lead wiressuch that the lead wires, which have been engaged with the first lead wire engaging portionand pulled out therefrom into the outer space OS, are then pulled out in the axial direction toward one side where the first flangeis positioned. The third lead wire engaging portionis formed in the first flangeat a given distance from the first lead wire engaging portion

A nonvolatile semiconductor memory device includes: a memory element, the memory element including: a semiconductor substrate; a first insulating film formed on a region in the semiconductor substrate located between a source region and a drain region, and having a stack structure formed with a first insulating layer, a second insulating layer, and a third insulating layer in this order, the first insulating layer including an electron trapping site, the second insulating layer not including the electron trapping site, and the third insulating layer including the electron trapping site, and the electron trapping site being located in a position lower than conduction band minimum of the first through third insulating layers while being located in a position higher than conduction band minimum of a material forming the semiconductor substrate; a charge storage film formed on the first insulating film; a second insulating film formed on the charge storage film; and a control gate electrode formed on the second insulating film.

Nonvolatile semiconductor memory device and method for manufacturing the same

Growing community of inventors

Tokyo, Japan

Masahiro Koike