Murata Manufacturing Co., Ltd.

Masahiro Kodama

Akira Ando

Hideaki Niimi

Mitsutoshi Kawamoto

Atsushi Kishimoto

Hideaki Nimi

A BaTiO-type semiconducting ceramic material which has undergone firing in a reducing atmosphere and re-oxidation, wherein the relative density of the ceramic material after sintering is about 85&#x2013;90%. A process for producing the semiconducting ceramic material of the present invention and a thermistor containing the semiconducting ceramic material are also disclosed.

Semiconducting ceramic material, process for producing the ceramic material, and thermistor

A ceramic electronic component includes a component body having semiconductive ceramic layers and internal electrodes. The semiconductive ceramic layers and the internal electrodes are alternately laminated. The semiconductive ceramic layers have a relative density of about 90% or less and contain no sintering additives. The component body is provided with an external electrode on each side thereof. The ceramic electronic component has a low resistance and a high withstand voltage.

Ceramic electronic component

A chip-type electronic component is provided in which generation of cracks in a glass coating layer and degradation of the insulating resistance in the ceramic body is unlikely to occur. In addition, a manufacturing method therefor is also provided. In the glass coating layer described above, the ratio of the alkali metal content to the silicon content is gradually increased from the vicinity of the glass coating layer to the inside thereof. The component is formed by forming a glass coating layer on surfaces of the component, in which the ratio of the alkali metal to the silicon in the glass coating layer is 0.3 or more; and a subsequent step of dipping the component provided with the glass coating layer in an acidic aqueous solution.

Chip-type electronic component and manufacturing method therefor

The semiconducting ceramic material of the present invention containing BaTiO and having a positive temperature coefficient of resistance is endowed with high withstand voltage. In the semiconducting ceramic material, a boundary temperature defined at the boundary between a first temperature range and a second temperature range is 180&deg; C. or more (e.g., 370&deg; C.) higher than the Curie temperature, wherein the first temperature range is higher than the Curie temperature and the ceramic material has a positive temperature coefficient of resistance in the range, and the second temperature range is higher than the first temperature range and the ceramic material has a negative temperature coefficient of resistance in the range.

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Shiga-ken, Japan

Masahiro Kodama