Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Kioxia Corporation

Other

Masahiro Kiyotoshi

Kiwamu Sakuma

Yoshio Ozawa

Katsuhiko Hieda

Akihito Yamamoto

Fumitaka Arai

Riichiro Shirota

Kazuhiro Eguchi

Osamu Arisumi

Atsuko Kawasaki

Haruka Kusai

Shosuke Fujii

Takeshi Hoshi

Yoshihiro Ogawa

Atsuhiro Kinoshita

Soichi Yamazaki

Haruka Sakuma

Katsuhiko Tachibana

Ichiro Mizushima

Takashi Suzuki

Takashi Nakao

Keitaro Imai

Masao Shingu

Nobuhide Yamada

Kaori Umezawa

Takeshi Hizawa

Katsuya Okumura

Mitsuru Sato

Li Zhang

Haruo Okano

Masumi Saitoh

Katsuyuki Sekine

Yoshitaka Tsunashima

Yasuhito Yoshimizu

Koichi Muraoka

Satoshi Nagashima

Tadashi Iguchi

Hiroaki Yamada

Ryota Fujitsuka

Keisuke Nakazawa

Kenji Aoyama

Eiji Ito

Hisataka Meguro

Daisuke Hagishima

Shoko Ito

Fumihiko Inoue

Moto Yabuki

Minako Inukai

Masaaki Nakabayashi

Makiko Katano

Junya Fujita

Tatsuhiko Koide

Takatoshi Ono

Hideyuki Yamawaki

A semiconductor memory includes a plurality of stripe-like active areas formed by stacking, in a direction perpendicular to a substrate, a plurality of layers extending parallel to the substrate, a first gate electrode formed on first side surfaces of the active areas, the first side surfaces being perpendicular to the substrate, a second gate electrode formed on second side surfaces of the active areas, the second side surfaces being perpendicular to the substrate. The layers are patterned in self-alignment with each other, intersections of the active areas and the first gate electrode form a plurality of memory cells, and the plurality of memory cells in an intersecting plane share the first gate electrode.

Semiconductor memory and method of manufacturing the same

A semiconductor manufacturing apparatus according to the present embodiment comprises a chamber. A chemical-agent supply part is configured to supply a water-repellent agent or an organic solvent to a surface of a semiconductor substrate having been cleaned with a cleaning liquid in the chamber. A spray part is configured to spray a water-capture agent capturing water into an atmosphere in the chamber.

Semiconductor manufacturing apparatus and manufacturing method of semiconductor device

Stack structures are arranged in a first direction horizontal to a semiconductor substrate, one of which has a longitudinal direction along a second direction. One stack structure has a plurality of semiconductor layers stacked between interlayer insulating layers. A memory film is formed on side surfaces of the stack structures and include a charge accumulation film of the memory cell. Conductive films are formed on side surfaces of the stack structures via the memory film. One stack structure has a shape increasing in width from above to below in a cross-section including the first and third directions. One conductive film has a shape increasing in width from above to below in a cross-section including the second and third directions. Predetermined portions in the semiconductor layers have different impurity concentrations between upper and lower semiconductor layers.

Non-volatile semiconductor memory device

According to one embodiment, a nonvolatile semiconductor memory device includes fin-type stacked layer structures. Each of the structures includes semiconductor layers stacked in a perpendicular direction. Assist gate electrodes are disposed in an in-plane direction and divided on a surface in the perpendicular direction of the structures.

Nonvolatile semiconductor memory device and method of manufacturing the same

According to one embodiment, a nonvolatile semiconductor memory device includes a semiconductor substrate, a first stacked layer structure including first to nsemiconductor layers (n is a natural number greater than or equal to 2) stacked in a first direction, and extending in a second direction, and first to nmemory cells provided on surfaces of the first to nsemiconductor layers facing a third direction. The imemory cell (1&#x2266;i&#x2266;n) comprises a second stacked layer structure in which a first insulating layer, a charge storage layer, a second insulating layer, and a control gate electrode are stacked. The second insulating layer has an equivalent oxide thickness smaller than that of the first insulating layer.

Nonvolatile semiconductor memory device

According to one embodiment, a nonvolatile semiconductor memory device includes a stacked layer structure including first to n-th semiconductor layers (n is a natural number equal to or larger than 2) stacked in a first direction which is perpendicular to a surface of a semiconductor substrate, and an upper insulating layer stacked on the n-th semiconductor layer, the stacked layer structure extending in a second direction which is parallel to the surface of the semiconductor substrate, and first to n-th NAND strings provided on surfaces of the first to n-th semiconductor layers in a third direction which is perpendicular to the first and second directions respectively.

Stack structures are arranged in a first direction horizontal to a semiconductor substrate, one of which has a longitudinal direction along a second direction. One stack structure has a plurality of semiconductor layers stacked between interlayer insulating layers. A memory film is formed on side surfaces of the stack structures and includes a charge accumulation film of the memory cell. Conductive films are formed on side surfaces of the stack structures via the memory film. One stack structure has a shape increasing in width from above to below in a cross-section including the first and third directions. One conductive film has a shape increasing in width from above to below in a cross-section including the second and third directions. Predetermined portions in the semiconductor layers have different impurity concentrations between upper and lower semiconductor layers.

A method of manufacturing a semiconductor device in which an insulating film is filled between patterns etched into a workpiece structure is disclosed. The method includes cleaning etch residues residing between the etched patterns by a first chemical liquid; rinsing the workpiece structure cleaned by the first chemical liquid by a rinse liquid; and coating the workpiece structure rinsed by the rinse liquid with a coating liquid for formation of the insulating film. The cleaning to the coating are carried out within the same processing chamber such that a liquid constantly exists between the patterns of the workpiece structure.

Method of manufacturing semiconductor device and apparatus for manufacturing semiconductor device

A nonvolatile semiconductor storage device includes: a plurality of stacked units juxtaposed on a major surface of a substrate, each stacked unit aligning in a first direction parallel to the major surface of the substrate; and a gate electrode aligning parallel to the major surface in a second direction non-parallel to the first direction. Each of the plurality of stacked units includes a plurality of stacked semiconductor layers via an insulating layer. The plurality of stacked units are juxtaposed so that the spacings between adjacent stacked units are alternately a first spacing and a second spacing larger than the first spacing. The second spacing is provided at a periodic interval four times a size of a half pitch F of the bit line. The gate electrode includes a protruding portion that enters into a gap of the second spacing between the stacked units. A first insulating film, a charge storage layer, and a second insulating film are provided between a side face of the semiconductor layer and the protruding portion.

Nonvolatile semiconductor storage device and method for manufacturing same

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Sagamihara, Japan

Masahiro Kiyotoshi