Matsushita Electric Industrial Co., Ltd.

Masahiro Kito

Masato Ishino

Yasushi Matsui

Nobuyuki Otsuka

Shinji Nakamura

Yoshiaki Nakano

Tomoaki Toda

Yuichi Inaba

Hisashi Nakayama

In a method for fabricating a semiconductor laser device, a plurality of grooves are formed in a surface of one conductive type of an InP layer. The InP layer is thermally treated in an atmosphere including at least a gas containing phosphorus and a gas containing arsenic in a mixed state, thereby forming a plurality of active regions made of InAsP in the plurality of grooves. An other conductive type of semiconductor layer is formed after the active regions are formed.

Fabrication method of a semiconductor laser device

A semiconductor laser includes a substrate; and a multilayered film formed on the substrate and including an active layer. The multilayered film includes a stripe structure that extends in a longitudinal direction of a resonator and has a tapered portion in which a width of a stripe changes in a tapered manner; and a first side face and a second side face that sandwich the stripe structure. At least one side face of the first side face and the second side face is inclined with respect to a principal surface of the substrate.

Semiconductor laser

The semiconductor laser device according to the present invention includes: a semiconductor substrate; an active layer having a stripe structure formed on the semiconductor substrate; and a buried layer formed on the semiconductor substrate and in a vicinity of the active layer, the buried layer including Fe and Ti.

Semiconductor laser apparatus

A semiconductor laser element including: a three-dimensional photonic crystal structure which has a light confining effect and includes alternating first and second refractive index changing layers, where refractive index of light periodically changes in a first direction in each first refractive index changing layer and periodically changes in a second direction in each second refractive index changing layer; and an active unit which is disposed in a portion having a predetermined refractive index inside the three-dimensional photonic crystal structure, and generates a laser beam in response to reception of electric power.

Semiconductor laser element having excellent light confinement effect and method for producing the semiconductor laser element

A semiconductor laser device includes a substrate, a p-type cladding layer and a n-type cladding layer provided on the substrate, and an active layer provided between the p-type cladding layer and the n-type cladding layer, having at least two barrier layers and at least two well layers, the barrier layers and the well layers being disposed alternately. Band offsets in a conduction band between the barrier layers and the well layers are provided so as to increase from the n-type cladding layer aide toward the p-type cladding layer side.

Semiconductor laser device

A semiconductor laser device includes an InP substrate and a multi-layered structure formed on the InP substrate, wherein the multi-layered structure includes at least a plurality of active regions for outputting a laser beam, and the plurality of active regions each are provided in each of a plurality of grooves dented toward the InP substrate.

Semiconductor laser device and fabrication method thereof

In a distributed feedback semiconductor laser includes an InP substrate and a multiple layer structure formed on a main surface of the InP substrate, the multiple layer structure includes at least an active layer for emitting laser light and a periodical structure for distributed feedback of the laser light, and the periodical structure includes a plurality of semiconductor regions each having a triangular cross section in a direction perpendicular to the main surface of the InP substrate and parallel to a cavity length of the distributed feedback semiconductor laser, the triangular cross section projecting toward the InP substrate.

Distributed feedback semiconductor laser and method for producing the

The semiconductor laser device of the invention includes: a strained quantum well structure including a well layer and a barrier layer, and a semiconductor substrate for supporting the strained quantum well structure. In the semiconductor laser device, at least one of the well layer and the barrier layer is composed of a mixed crystal where an atomic ordering is generated.

Semiconductor laser device and method for fabricating the same and

A strained multiple quantum well semiconductor laser including a semiconductor substrate, a multiple quantum well active layer including a plurality quantum well layers and a plurality of barrier layers, and a multilayer structure including the above multiple quantum well active layer is provided. Each barrier layer is interposed between two of the multiple quantum well active layers. The multilayer structure is formed upon the semiconductor substrate. Herein, at least one of the plurality of barrier layers is thicker than the other barrier layers, thereby serving as a layer absorbing strain which is stored in the barrier layers due to a difference between the lattice constant of semiconductor substrate and the lattice constant each quantum well layer.

Strained multiple quantum well semiconductor laser and a method for

The semiconductor laser comprises a Sn doped InP substrate 1, n-InGaAsP wave guide layer 2, 5 nm thick InGaAs well layer 3, 3.5 nm thick undoped InGaAsP layer 4, 3 nm thick p-InGaAsP modulation doping layer 5, 3.5 nm thick undoped InGaAsP layer 6, a modulation doping quantum well layer 7 with ten wells, a 90 nm thick p-InGaAsP layer 8, a p-InP clad layer 9 (Zn=7.times.10.sup.17 cm.sup.-3), p-n-p current block layer 10, and a mesa-shaped active layer region 11. An Au/sn n-electrode 12 and if Au/Zn p-electrode 13 are formed by vapor deposition to complete the laser structure.

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Osaka, Japan

Masahiro Kito