Canon Kabushiki Kaisha

Aubex Corporation

Masahiro Kanai

Yasushi Fujioka

Akira Sakai

Tadashi Hori

Isamu Shimizu

Takahiro Yajima

Shotaro Okabe

Shunichi Ishihara

Keishi Saitoh

Kyosuke Ogawa

Teruo Misumi

Tetsuo Sueda

Yoshio Tsuezuki

Shunri Oda

Shigeru Ohno

Koichiro Moriyama

Katsumi Nakagawa

Yuzo Koda

Yuzo Kohda

Takehito Yoshino

Atsushi Koike

Hiroshi Echizen

Soichiro Kawakami

Tsutomu Murakami

Tadashi Sawayama

Hirokazu Ohtoshi

Hiroshi Shimoda

Jinsho Matsuyama

Tetsuya Takei

Hiroyuki Ozaki

Takeshi Shishido

Hideo Tamura

Kozo Arao

Koichi Matsuda

Toshimitsu Kariya

Masaaki Hirooka

Jun-Ichi Hanna

Yukito Aota

Masafumi Sano

Tatsuyuki Aoike

Naoto Okada

Tomonori Nishimoto

Hirohito Yamaguchi

Yasuyoshi Takai

Takayoshi Arai

Atsushi Yasuno

Katsunori Oya

Kohei Yoshida

Hidetoshi Tsuzuki

Hirokazu Otoshi

Masatoshi Tanaka

Hiroshi Sugai

Junichi Hanna

Hisami Tanaka

Shuichiro Sugiyama

Takashi Kurokawa

Hitomi Sano

Harumi Sakou

Tomokazu Sushihara

Ryo Hayashi

Keishi Saito

Ryuji Okamura

Hisanori Tsuda

Atsushi Shiozaki

Hiroaki Niino

Yusuke Miyamoto

Takeshi Aoki

Atsushi Yamagami

Mutsuo Mitsui

Eiji Takeuchi

Tatuyuki Aoike

Kouichi Matuda

Mituyuki Niwa

Keishi Saitou

Masahumi Sano

Takahiro Yajimaa

Etsumi Nagaya

The present invention provides an excellent organic EL device with a glass substrate and a sealing glass sheet which are thinned for weight reduction while avoiding lowering the durability and impact resistance of the device. The organic luminescence device is characterized in that sealing is performed at the space between a face of the sealing glass sheet along the outer edge and a face of the device substrate with a low melting point metal.

Organic electroluminescence device

Provided are a method of effectively manufacturing an organic EL element with high quality and an apparatus therefor. A surface to be processed of a substrate in an upper electrode forming step is held downward, and the surface to be processed of the substrate in a passivation layer forming step is held upward.

Manufacturing method for organic electronic element and manufacturing apparatus therefor

In a plasma processing method, on a back side of a cathode electrode is provided at least one conductor plate d.c. potentially insulated from the cathode electrode and an opposing electrode, and the cathode electrode and the conductor plate are enclosed with a shielding wall such that a ratio of an inter-electrode coupling capacitance provided by the cathode electrode and the opposing electrode to a coupling capacitance provided by the cathode electrode and a bottom surface of the shielding wall on the back side of the conductor plate is not less than a predetermined value. Thereby, a high-quality, high-speed plasma processing is realized.

Plasma processing method and apparatus

A plasma-processing apparatus having a high frequency power application electrode in which plasma is generated by supplying VHF power to the high frequency power application electrode. The plasma-processing apparatus has an impedance-matching equipment comprising a capacitive element and an inductive element, which are mutually connected in series. The apparatus is arranged so that the capacitive element and the inductive element of the impedance-matching equipment are symmetrical with respect to the center of the high frequency power application electrode.

Plasma-processing apparatus

A chemical-reaction inducing means is provided in an exhaust line connecting a processing space for subjecting a substrate or a film to plasma processing to an exhaust means, and at least either an unreacted gas or byproduct exhausted from the processing space are caused to chemically react without allowing plasma in the processing space to reach the chemical-reaction inducing means, thereby improving the processing ability of the chemical-reaction inducing means to process the unreacted gas or byproduct.

Exhaust processing method, plasma processing method and plasma processing apparatus

A milling apparatus is provided in which temperature rise of a treatment-object in milling treatment, especially of the substrate thereof, is prevented. In the apparatus, ionization mechanismcomprises casinghaving an opening at the center portion of the face thereof opposing to substrateheld by substrate holdera filament is placed at the position where the straight line drawn from the filament to substrateis intercepted by casingand electromagnetsare provided around ionization mechanismfor generating a magnetic field to produce magnetic lines extending through openingto substrate

Milling apparatus

In a deposited-film formation method or apparatus according to the present invention, which comprises providing a discharge electrode in a vacuum vessel equipped with exhaust means, supplying a hydrogen gas and a raw material gas for forming a deposited film which contains at least an Si element, generating plasma from the material gas by supplying high frequency electric power to the discharge electrode, and forming a deposited film on a substrate in the vacuum vessel by plasma CVD, wherein an auxiliary electrode is arranged in plasma in the vacuum vessel, a periodically changing voltage is applied to the auxiliary electrode without causing a discharge to form a deposited film, whereby it is possible to form an amorphous-silicon-based deposited film having good quality and good uniformity over a large area at a high rate of film formation.

Method and apparatus for deposited film

A plate high-frequency electrode for supplying a high-frequency power of the VHF band and a grounding electrode are disposed in opposition to each other at an interval of less than 8 mm in a vacuum vessel; at least a silane-based gas and nitrogen gas as source gases are introduced into a reaction space of the vacuum vessel, and a silicon nitride deposited film is formed with the pressure of the reaction space being kept at 40 to 133. Thereby, a silicon nitride film with good quality can be obtained.

Method of forming silicon nitride deposited film

To provide an apparatus for forming a deposited film, which is a parallel plate electrode type CVD apparatus, with a discharge vessel receiving a material gas flowing therein and discharging air therefrom, decomposing the material gas by the aid of a plasma generated therein, and depositing the film on the substrate, in which the exhaust port of the material gas exhaust means has an opening wider in the lateral direction than the parallel plate electrode. This structure diminishes the stagnant region of the material gas during the deposited film forming process and controls formation of by-products, to deposit the film uniform in quality and thickness.

Apparatus for forming deposited film

Sputtering particles emitted from a target are ionized by the Penning ionization process. And the sputtering particles ionized are caused to fly in the direction of the substrate by a magnetic field formed by ambipolar diffusion due to a magnetic field generating means without scattering the particles to deposit the particles on the substrate. The partial pressure of a sputtering discharge gas in a discharge space is set to 1.3 Pa or less and a distance from the target to an ionization space is within twice the mean free path of the partial pressure of the sputtering discharge gas.

Method of forming deposited film

A vacuum-processing apparatus comprising a vacuum vessel, a processing chamber arranged in the vacuum vessel and a heater for heating a circumferential wall of the processing chamber, wherein a substrate is arranged in the processing chamber and the substrate is vacuum-processed in the processing chamber, characterized in that the vacuum-processing apparatus has a cooling plate located outside the processing chamber and arranged at a position to oppose the circumferential wall of the processing chamber for cooling the circumferential wall of the processing chamber, and a mechanism for moving the cooling plate so as to change a distance between the cooling plate and the circumferential wall of the processing chamber. A vacuum-processing method for performing a surface treatment for a substrate using the vacuum-processing apparatus.

Vacuum-processing method using a movable cooling plate during processing

A deposited film forming apparatus has a power applying electrode disposed above a flat plate type base member grounded, in a vacuum chamber, and a power source for supplying a power to the power applying electrode, the deposited film forming apparatus being constructed to supply the power from the power source to the power applying electrode so as to generate a plasma in a discharge space between the power applying electrode and a substrate disposed in opposition to the power applying electrode in the vacuum chamber and serving as an electrode in a pair with the power applying electrode, thereby decomposing a source gas introduced into the vacuum chamber to form a deposited film on the substrate, wherein the power applying electrode is fixed to the base member with the power applying electrode being isolated from the base member.

Deposited film forming apparatus and deposited film forming method

A two-layer structured electric power application electrode including a non-split electrode consisting of a single planar plate and six split electrodes arranged on the non-split electrode so as to be electrically in contact with the non-split electrode is arranged on the upper side of a discharge chamber provided within a vacuum container such that the power application electrode faces a strip substrate in parallel. The split electrodes are arranged in such a manner as to form a planar plane, and the distance between the surfaces of the split electrodes facing the strip substrate and the strip substrate is uniform. The total area of the surfaces of the split electrodes facing the strip substrate is the same as the area of the non-split electrode on which the split electrodes are mounted. This improves the uniformity in plasma generated in the apparatus for forming a deposited film and enables cutting-down of the costs required to form deposited films.

Apparatus and method for forming deposited film

A substrate-processing method includes at least (a) a step of delivering a web substrate and an interleaf from a substrate delivery bobbin provided in a substrate delivery chamber while the web substrate is transported into a substrate-processing chamber and the interleaf delivered is wound on an interleaf takeup bobbin, and (b) a step of subjecting the web substrate transported into the substrate-processing chamber to desired processing in the substrate-processing chamber. The web substrate processed in the substrate-processing chamber is transported outside the substrate-processing chamber, and transport abnormality of the interleaf in the substrate delivery chamber is detected by a transport abnormality-detecting mechanism.

Apparatus and method for processing a substrate

A gas adsorptive member is disposed in a space communicating with film deposition chambers, and deposition films are deposited while continuously feeding gas components released from this member, thereby enabling the high quality and uniform deposition films to be formed on the substrate with good reproducibility.

Method and apparatus for forming deposition film, and method for treating substrate

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Tokyo, Japan

Masahiro Kanai