Hitachi, Ltd.

Hitachi Haramachi Electronics Co., Ltd.

Masahiro Iwamura

Ikuro Masuda

Tatsumi Yamauchi

Hideo Maejima

Shigeya Tanaka

Takashi Hotta

Kazuo Kato

Takashi Akioka

Yutaka Kobayashi

Kozaburo Kurita

Yasuhiro Nakatsuka

Tadaaki Bandoh

Yukio Suzuki

Tetsuo Nakano

Yuji Yokoyama

Atsushi Hiraishi

Akira Ide

Shinji Kadono

Sin-ichi Sinoda

Yoji Nishio

Akira Uragami

Hideaki Uchida

Masayoshi Yoshimura

Toshiaki Matsubara

Mutsuhiro Mori

Noboru Akiyama

Kazutaka Mori

Shigeru Takahashi

Shigeo Kuboki

Takao Sasayama

Nobuyuki Gotou

Kinya Mitsumoto

Nagaharu Hamada

Masamitsu Inaba

Masahiro Ueno

Seigoh Yukutake

Hideki Miyazaki

Nozomu Matsuzaki

Katsunori Suzuki

Fumio Murabayashi

Koji Tateno

Junichi Sakano

Shinji Shirakawa

Akihiko Emori

Masahiko Saito

Keiichi Mashino

Kenichi Kurosawa

Naoki Sakurai

Yoshiki Kobayashi

Motohisa Nishihara

Masahiro Yamamura

Takeshi Takemoto

Masashi Yura

Akiyoshi Osumi

Tomoyuki Someya

Yoshimasa Takahashi

Kouzaburou Kurita

Takao Watanabe

Ryoichi Hori

Goro Kitsukawa

Atsuo Watanabe

Tsunehiro Endo

Nobuo Sato

Mutsumi Suzuki

Akihiro Tamba

Seigou Yukutake

Kunihiko Yamaguchi

Minehiro Nemoto

Kei Kato

Satoru Shigeta

Shuichi Miyaoka

Makoto Saeki

Hiroshi Iwasawa

Shuko Yamauchi

Toshitaka Hara

Noriyuki Honma

Hideto Kazama

Atsuo Hotta

Koji Kawamoto

Yukitaka Hayashi

Masanori Tsuchiya

Hitoshi Ohura

Shoichi Ozeki

Kiyoo Ito

Goro Suzuki

Tatsuo Nojiri

Keiji Kunii

Masato Miura

Hiroyuki Hanei

Koichi Motohashi

Tetsuya Yamamoto

Kazuhiro Shiina

Kunihoro Nunomura

Atushi Hiraishi

Hisashi Tada

Yoshio Okamura

Akira Urragami

Schigeo Kuboki

Kenichi Fukushima

Akiro Uragami

In a magnetic-field angle detection device and a rotation angle detection device in which the accuracy of the measured angle is not degraded even if the MR ratio of the tunneling magnetoresistance element is increased. In a magnetic-field-angle measurement apparatus including a magnetic-field-angle detection circuit and a magnetic sensor having a tunneling magnetoresistance element with a pinned magnetic layer, the magnetic-field-angle detection circuit has a power-supply unit that outputs a constant voltage as a bias voltage to the tunneling magnetoresistance element of the magnetic sensor and a current-detection unit that detects an output current of the tunneling magnetoresistance element. The accuracy of the measured angle of the magnetic-field angle detection device and the rotation angle detection device is improved by measuring the tunneling magnetoresistance element current while maintaining the terminal voltage of the tunneling magnetoresistance element constant with input impedance of the current-detection unit as zero.

Magnetic-field-angle measurement apparatus and rotational-angle measurement apparatus using same

An integrated circuit for driving a semiconductor device, which is adaptable for demands, such as a higher output (larger current), a higher voltage, and a smaller loss, and has a small size, is produced at a low cost, and has high reliability. A power converter including such an integrated circuit is also provided. Circuit elements constituting a drive section of an upper arm drive circuit, a level shift circuitincluding a current sensing circuit, a drive section of a lower arm drive circuit, and a drive signal processing circuitare integrated and built in one high withstand voltage IC chip. Circuit elements constituting a final output stage buffer sectionof the upper arm drive circuitare built in a vertical p-channel MOS-FET chipand a vertical n-channel MOS-FET chip. Circuit elements constituting a final output stage buffer sectionof the lower arm drive circuitare built in a vertical p-channel MOS-FET chipand a vertical n-channel MOS-FET chip. Thus, a driver ICis fabricated.

Integrated circuit for driving semiconductor device and power converter

V-phase upper-arm open phase detecting circuit outputs a permission signal to allow U-phase lower-arm MOSFET to be conductive when the V-phase voltage is higher than the positive electrode potential. In response to this permission signal, U-phase lower-arm driver circuit drives U-phase lower-arm MOSFET. V-phase lower-arm open phase detecting circuit outputs a permission signal to allow U-phase upper-arm MOSFET to be conductive when the V-phase voltage is lower than the negative electrode potential. In response to this permission signal, U-phase upper-arm driver circuit drives U-phase upper-arm MOSFET. Thereby, a MOS rectifying device capable of rectifying even when an open phase occurs, a driving method thereof, and a motor vehicle using thereof can be provided.

MOS rectifying device, driving method thereof, and motor generator and motor vehicle using thereof

A generator having a field coil L, and an SWcontrol circuitfor controlling field current flowing through the field coil L. When a generating operation of the generator is to be ended, a switchSWis turned off to interrupt the field current flowing through the field coil L, and a switchSWis turned off to allow the field current remaining the field coil L to the current path including a resistance elementwith a resistance element capable of quickly attenuating the field current.

Generating apparatus and motor control apparatus

An interface circuit capable of reliably transmitting signal even when there is fluctuation in the potential difference in reference potentials between circuits between which signal transmission is carried out. An interface circuitis comprised of a level shift circuitand a potential selection circuitfor selecting the potential of a power supply voltage for operating the level shift circuitThe potential selection circuitselects one of a plurality of input potentials. The level shift circuitreceives a voltage pulse having a first potential as reference potential and outputs a voltage pulse having a second potential as reference potential. The level shift circuitis operated on the basis of both a potential difference between the output potential from the potential selection circuit and the first potential and a potential difference between the selected potential and the second potential.

Interface circuit, power conversion device, and vehicle-mounted electric machinery system

An inverter device is mounted on the rotating electric machine body The inverter device includes a module unit having a converter circuit and a control unit that controls the operation of the converter circuit. The converter circuit is configured by connecting a plurality of the following series circuits in parallel, each of the series circuits includes a P-channel MOS semiconductor device disposed at a higher potential side and an N-channel MOS semiconductor device disposed at a lower potential side which are electrically connected in series. An electric power that is supplied from a battery or an electric power that is supplied to the battery is controlled.

Vehicle rotating electric machine

An information processing system having an original clock oscillator for delivering at least one original clock signal K defined as a first clock signal and a plurality of information processing units supplied with the original clock signal K, wherein each information processing unit comprises clock generating means for generating at least one second clock signal Kwhich is phase-locked with the original clock signal K and which has a predetermined duty cycle and a logic device whose operation timing is controlled by the second clock signal Kand the operation timing of an interface provided between at least one pair of logic devices is synchronously controlled by the clock signal K.

Information processor and information processing system utilizing interface for synchronizing clock signal

An information processing system having an original clock oscillator for delivering at least one original clock signal K defined as a first clock signal and a plurality of information processing units supplied with the original clock signal K, wherein each information processing unit comprises clock generating means for generating at least one second clock signal K which is phase-locked with the original clock signal K and which has a predetermined duty cycle and a logic device whose operation timing is controlled by the second clock signal K , And the operation timing of an interface provided between at least one pair oflogic devices is synchronously controlled by the clock signal K .

Data processing system generating clock signal from an input clock, phase locked to the input clock and used for clocking logic devices

In semiconductor integrated circuit device and microprocessor including at least one functional circuit block, the start of operation of the functional circuit block is detected prior to the start of operation, the functional circuit block for which the start of operation has been detected is activated prior to the start of operation and inactivated after the termination of operation.

Low power consumption semiconductor integrated circuit device and microprocessor

A high speed, high performance pipelined semiconductor device is provided, such as a pipelined data processing device and memory device. In the pipeline operation, a functional circuit unit and a transmission unit are separately controlled at each pipeline stage cycle. A transmission unit between two functional circuit units is divided into N transmission units while considering a cycle time, and each divided transmission unit is assigned one pipeline stage cycle.

Pipelined semiconductor devices suitable for ultra large scale integration

In a driving apparatus of a power semiconductor element for conducting or interrupting a main current, first resistance variable for changing a first resistance according to a control voltage, and second resistance variable for changing a second resistance according to a voltage between a first and a second terminal are provided, and either one of a voltage of a control power supply or a voltage between the first and the second terminal is voltage-divided by the first resistance and the second resistance, and the divided voltage is applied to a control gate terminal at the time of conducting or interrupting the main current.

Method and apparatus for driving a semiconductor element

A power inverter using a voltage driven switching element, capable of suppressing an excessive surge voltage which is generated on high-speed switching of IGBTs or MOSFETs, and suppressing radio frequency oscillation after the suppression of the surge voltage. The power inverter includes a switching element rendering a power path conducting and non-conducting, and a speeding-up circuit of a feedback path in an active clamping circuit added to the switching element.

Surge voltage suppressed power inverter using a voltage driven switching element

Method and apparatus for driving a semiconductor element with variable resistance circuitry

Low power consumption semiconductor integrated circuit device and

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Hitachi, Japan

Masahiro Iwamura