Tokyo Electron Limited

Masahiro Ito

Masahiro Ogasawara

Ryoichi Yoshida

Masanori Hosoya

Sungtae Lee

Disclosed is a substrate processing method of etching a substrate including a target layer, and a mask layer and an intermediate layer that are stacked on the target layer, to form a pattern on the target layer via the intermediate layer and the mask layer. The intermediate layer is etched under a processing pressure of 100 mTorr (1.33&#xd7;10 Pa) to 150 mTorr (2.0&#xd7;10 Pa) by using as a processing gas a mixture gas of CF, CHF, and CF, and the mask layer is etched by using a COS-containing gas as a processing gas.

Substrate processing method and storage medium

A plasma processing method includes: etching an anti reflection coating film with plasma generated from an etching gas by using a resist film that is patterned as a mask, in a deposited film in which an Si-ARC film constituting the anti reflection coating film is formed on a layer to be etched and the ArF resist film is formed on the anti reflection coating film; and modifying the ArF resist film with plasma generated from a modifying gas including a CFgas, a COS gas and an Ar gas by introducing the modifying gas into a plasma processing apparatus, wherein the modifying is performed before the etching.

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Nirasaki, Japan

Masahiro Ito