Nec Corporation

Masahiro Ishibashi

Yukihiro Kiuchi

Yoshitaka Kyogoku

Masatoshi Iji

In a semiconductor device (), a package board () is provided in which a plurality of wiring layers are layered, a plurality of mounting pads () arranged in a matrix are provided to the uppermost wiring layer of the package board (), and solder bumps () are connected to the mounting pads (). A semiconductor chip () is mounted on the package board () via the solder bumps (). The uppermost wiring layer of the package board () is formed from a resin material in which the Young's modulus is 1 GPa or lower when the temperature is 10 to 30&#xb0; C., and the elongation at break is 50% or higher.

Wiring board, semiconductor device, and method for manufacturing wiring board

In a semiconductor device, the topmost wiring layer of the package board is formed from an insulation material in which the elongation at break is 20% or higher and Young's modulus is 1 GPa or less when the temperature is 10 to 30&#xb0; C. This insulation material contains a reactive elastomer that reacts with epoxy resin or an epoxy resin curing agent; an epoxy resin; an epoxy resin curing agent; and a crosslinked styrene-butadiene rubber having a double bond and a hydroxyl group, a carboxylic group, or another polar group. It is therefore possible to provide a semiconductor device that has a wiring board in which the connection reliability in relation to temperature cycles is high and the adhesiveness between the insulation layer and the electroless copper plating layer is also high.

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Tokyo, Japan

Masahiro Ishibashi