Fujitsu Corporation

National Institute of Advanced Industrial Science and Technology

International Superconductivity Technology Center, the Juridical Foundation

Daikin Industries, Ltd.

Other

Hioki E.e. Corporation

Masahiro Horibe

Keiichi Tanabe

Mizuhisa Nihei

Akio Kawabata

Hideo Suzuki

Taku Yamanaka

Yuji Awano

Hironori Wakana

Yoshinobu Tarutani

Hiroyuki Yoshimoto

Yoshihiro Ishimaru

Dai Fukami

Ryo Sakamaki

Yuto Kato

Daiyu Kondo

Shintaro Sato

Tsunehiro Hato

Seiji Adachi

Kazukiyo Joshin

Tomohiro Ikeda

Naoto Nakayama

Akihiro Shioiri

Yuki Kawamuro

Osami Horibe

Hiroshi Nagaishi

Seitaro Kon

A uniformity output device for outputting a uniformity of particles in a slurry, in which an insoluble solid matter is mixed in liquid, includes: a pair of electrodes configured to apply AC voltage to the slurry; a measurement unit configured to measure impedance of the slurry on the basis of the response current flowing through the slurry when AC voltage with changing frequency is applied to the slurry; and a processing unit configured to determine the uniformity by executing a particle equivalent circuit analysis with a parallel circuit formed of a resistor and a capacitor as an element on the basis of the impedance measured by the measurement unit in accordance with the frequency.

Uniformity output device, uniformity output method, and non-transitory computer-readable recording medium for determining whether a particle diameter of particles in a mixture is uniform or non-uniform

The invention provides a connector-attached dielectric waveguide that allows the dielectric waveguide to be easily connectable with an opposite component and is capable of forming a connection structure exhibiting low transmission and return losses of a high frequency signal. The connector-attached dielectric waveguide includes a dielectric waveguide and a connector. The dielectric waveguide includes a dielectric waveguide body and a dielectric waveguide end. The dielectric waveguide end has a smaller cross-sectional area than the dielectric waveguide body.

Connector-attached dielectric waveguide including a connecting portion and a fixing portion that are slidably axially movable with respect to each other

A method that includes changing a probe angle with respect to the conductor surface of a substrate that has a flat conductor surface mounted on the mounting surface of a stage in a high-frequency test system, thereby changing the state of contact of the tip of a signal terminal and tip of a ground terminal with the conductor surface, outputting high-frequency signals from the signal terminal to the conductor surface and receiving reflected signals using the probe to find S-parameters at different probe angles, and determining, based on a plurality of the S-parameters, a reference probe angle at which the reference line formed connecting the tip of the signal terminal and tip of the ground terminal is parallel with the conductor surface.

Method for determining probe angle, high-frequency test system, program and storage medium

The invention provides a dielectric waveguide for transmitting millimeter waves or sub-millimeter waves. The dielectric waveguide is easily processed and connected even when having a small diameter, and can provide a connection structure exhibiting low transmission and return losses of high frequency signals. The dielectric waveguide includes a dielectric waveguide body and a dielectric waveguide end having a lower permittivity than the dielectric waveguide body. The dielectric waveguide body and the dielectric waveguide end are seamlessly and monolithically formed from the same material.

Dielectric waveguide having a dielectric waveguide body and a dielectric waveguide end with specified densities and method of producing

A semiconductor device uses a carbon nanotube structure, which reduces an electric resistance and a thermal resistance by increasing a density of the carbon nanotubes. An insulation film covers a first electrically conductive material. A second electrically conductive material is provided on the insulation film. A plurality of carbon nanotubes extend through the insulation film by being filled in an opening part that exposes the first electrically conductive material. The carbon nanotubes electrically connect the first electrically conductive material and the second electrically conductive material to each other. Ends of the carbon nanotubes are fixed to a recessed part provided on a surface of the first electrically conductive material.

Carbon nanotube structure, a semiconductor device, a semiconductor package and a manufacturing method of a semiconductor device

Disclosed is a semiconductor device including a SiC substrate and a heat conductor formed in a hole in the SiC substrate and made of a linear structure of carbon elements.

Semiconductor device and manufacturing method thereof

A Ti film is pattern-formed on a desired portion on a silicon substrate, and a Co film is formed on the substrate so as to cover the Ti film. CNTs are formed only on a portion, under which the Ti film is formed, of the surface of the Co film at approximately 600&#xb0; C. by a thermal CVD method. The length of the CNT can be controlled by adjusting the thickness of the Ti film.

Substrate structure and manufacturing method of the same

A method of manufacturing a semiconductor device having an interconnection part formed of multiple carbon nanotubes is disclosed. The method includes the steps of (a) forming a growth mode control layer controlling the growth mode of the carbon nanotubes, (b) forming a catalyst layer on the growth mode control layer, and (c) causing the carbon nanotubes to grow by heating the catalyst layer by thermal CVD so that the carbon nanotubes serve as the interconnection part. The growth mode control layer is formed by sputtering or vacuum deposition in an atmospheric gas, using a metal selected from a group of Ti, Mo, V, Nb, and W. The growth mode is controlled in accordance with a predetermined concentration of oxygen gas of the atmospheric gas.

Semiconductor device and method of manufacturing the same

A high-temperature superconductive device is disclosed, including a ramp-edge junction. The ramp-edge junction includes a first electrode layer () that defines the size of the ramp-edge junction and a second electrode layer (). The width of the second electrode layer () is greater than the width of the first electrode layer (). The first electrode layer () and the second electrode layer () touch in part, and are separated via a first insulation layer () in remaining part. Because the ramp-edge junction includes the first electrode layer () and the second electrode layer (), the inductance of the ramp-edge junction can be reduced with the critical current density Jbeing kept at a high level.

High-temperature superconductive device

A first Josephson junction in a Single Flux Quantum circuit (SFQ circuit) and a second Josephson junction in an interface circuit (latch driver circuit) are formed with junction materials different from each other, and the junction materials are selected so that the hysteresis of the first Josephson junction in a current-voltage characteristic is smaller than the hysteresis of the second Josephson junction in a current-voltage characteristic.

Superconducting circuit

To obtain a superconducting driver circuit which can obtain an output voltage of several millvolts or above, can use a DC power source as a driving power source, can form no capacitance between it and a ground plane, and has a small occupation area, the superconducting driver circuit is constructed by superconducting flux quantum interference devices (SQUIDs) each constructing a closed loop having as components two superconducting junctions and an inductor. The SQUIDs share the inductors and are connected in series in three or more stages.

Superconducting driver circuit

At least two ramp-edge-structure Josephson junctions having different critical current densities to one another are provided on a substrate.

High-temperature superconducting device and manufacturing method thereof

A method of fabricating a Josephson device includes the steps of forming a first superconducting layer and forming a second superconducting layer to form a Josephson junction therebetween, wherein the step of forming the second superconducting layer includes the steps of conducting a first step of forming the second superconducting layer with improved uniformity and conducting a second step of forming the second superconducting layer on the second superconducting layer formed in the first step with improved film quality.

Growing community of inventors

Tsukuba, Japan

Masahiro Horibe