Japan Science and Technology Agency

Tokyo Institute of Technology

Canon Kabushiki Kaisha

Nissan Motor Company Limited

Asahi Glass Company, Limited

Mitsubishi Heavy Industries Limited

Japan Science and Technology Corporation

Other

Sony Corporation

Komatsu Corporation

The Coca-cola Company

Mitsubishi Jukogyo Kabushiki Kaisha

Nagoya University

Ryoen Technical Service Corp.

Oxy Japan Company Limited

Masahiro Hirano

Hideo Hosono

Toshio Kamiya

Katsuro Hayashi

Hiromichi Ota

Kenji Nomura

Masashi Miyakawa

Setsuro Ito

Hiroshi Yanagi

Hidenori Hiramatsu

Masahiro Orita

Satoru Narushima

Sungwng Kim

Yoshitake Toda

Kazushige Ueda

Satoru Matsuishi

Sung Wng Kim

Kenichi Kawamura

Yoichi Kamihara

Hajime Nagano

Shintaro Honjo

Yoshiki Kato

Yoshinori Koyama

Kenji Fujiwara

Isao Tanaka

Kazuo Ishida

Kouichi Mori

Katsuhiko Yokohama

Makoto Susaki

Masahiro Harada

Hiroshi Suzumura

Norihito Nakazawa

Takatoshi Kogure

Taisuke Miura

Kunihito Koumoto

Mitsuru Ohshiro

Yasushi Takeda

Masayoshi Sadakata

Katsurou Hayashi

Hiromichi Ohta

Kenichi Ogasawara

Akira Nishio

Nobuhiko Sarukura

Toshio Miyauchi

Akifumi Tsuruta

Haritha Buchammagari

Kohtaro Osakada

Daisuke Takeuchi

Hayato Kamioka

Eiji Motomitsu

Mitsugi Suehiro

Tsutomu Baba

Seok Gyu Yoon

Takatoshi Nomura

Hiroya Shida

A fan drive system includes a hydraulic pump, a hydraulic motor that rotates a fan on the basis of hydraulic oil supplied from the hydraulic pump, a data acquisition unit that acquires an actual fan speed of the fan, a target amount determination unit that determines a target fan speed of the fan on the basis of a state of an object to be cooled of the fan, and an estimating unit that estimates a state of the hydraulic pump or a state of the hydraulic motor on the basis of a change of a feedback amount that indicates a difference between the target fan speed and the actual fan speed.

Fan drive system and management system

The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 10/cm, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode, a drain electrode, a gate electrode, a gate insulating film, and a channel layer, an amorphous oxide having an electron carrier concentration less than 10/cmis used in the channel layer

Amorphous oxide and thin film transistor

A switching element of LCDs or organic EL displays which uses a thin film transistor device, includes: a drain electrode, a source electrode, a channel layer contacting the drain electrode and the source electrode, wherein the channel layer comprises indium-gallium-zinc oxide having a transparent, amorphous state of a composition equivalent to InGaO(ZnO)(wherein m is a natural number less than 6) in a crystallized state, and the channel layer has a semi-insulating property represented by an electron mobility of more than 1 cm/(V&#xb7;sec) and an electron carrier concentration is less than 10/cm, a gate electrode, and a gate insulating film positioned between the gate electrode and the channel layer.

Switching element

When a first automatic stopping condition is established while a vehicle (A,B) is stationary or a second automatic stopping condition is established during travel, an internal combustion engine () of the vehicle is automatically stopped. The first automatic stopping condition is established when a battery voltage or a battery state of charge of a battery () equals or exceeds a first threshold, and the second automatic stopping condition is established when the battery voltage or the battery state of charge of the battery () equals or exceeds a second threshold. By setting the second threshold to be greater than the first threshold, opportunities for automatically stopping the internal combustion engine () are secured while satisfying a power requirement of an electrical load () during restarting of the internal combustion engine ().

Automatic stopping device and automatic stopping method for internal combustion engine

An automatic engine-stop control device for a vehicle has a coast stop controlling section that stops an engine during a running of the vehicle when a predetermined condition is satisfied, a deceleration detecting section that detects a deceleration level of the vehicle, and an engine-stop time limiting section that limits a time length for which the coast stop controlling section keeps the engine in a stopped state if the deceleration level is smaller than or equal to a predetermined value.

Automatic engine-stop control device for vehicle

An internal combustion engine () of a vehicle (A,B) is automatically stopped when a first automatic stopping condition is established while the vehicle is stationary or a second automatic stopping condition is established while the vehicle travels. The first automatic stopping condition requires a road gradient equal to or smaller than a first gradient threshold, and the second automatic stopping condition requires the road gradient equal to or smaller than a second gradient threshold. By setting the second gradient threshold at a smaller value than the first gradient threshold, a feeling of unease experienced by a driver when the engine is stopped on a slope is reduced.

Engine automatic stopping device and engine automatic stopping method

A thermoelectric conversion material having a novel composition is provided. The thermoelectric conversion material comprises a first dielectric material layer, a second dielectric material layer, and an electron localization layer that is present between the first dielectric material layer and the second dielectric material layer and that has a thickness of 1 nm.

Thermoelectric conversion material and production method for thermoelectric conversion material

Disclosed is a superconducting compound which has a structure obtained by partially substituting oxygen ions of a compound, which is represented by the following chemical formula; LnTMOPh [wherein Ln represents at least one element selected from Y and rare earth metal elements (La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu), TM represents at least one element selected from transition metal elements (Fe, Ru, Os, Ni, Pd and Pt), and Pn represents at least one element selected from pnictide elements (N, P, As and Sb)] and has a ZrCuSiAs-type crystal structure (space group P4/nmm), with at least one kind of monovalent anion (F, Clor Br). The superconducting compound alternatively has a structure obtained by partially substituting Ln ions of the compound with at least one kind of tetravalent metal ion (Ti, Zr, Hf, C, Si, Ge, Snor Pb) or a structure obtained by partially substituting Ln ions of the compound with at least one kind of divalent metal ion (Mg, Ca, Sror Ba). The Tc of the superconducting compound is controlled in accordance with the ion substitution amount.

Superconducting compound and method for producing the same

A magnetic semiconductor material contains at least one type of transition metals (Mn, Fe, Ru, Re, and Os) having five electrons in the d atomic orbital as a magnetic ion, in which the magnetic semiconductor material exhibits n-type electrical conduction by injection of an electron carrier and p-type electric conduction by injection of a hole carrier. A specific example is a layered oxy-pnictide compound represented by LnMnOPn (wherein Ln is at least one type selected from Y and rare earth elements of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and Pn is at least one selected from pnicogen elements of N, P, As, Bi, and Sb). A high-sensitivity magnetic sensor, current sensor, or memory device can be made by using a magnetic pn homojunction structure made of thin films composed of the magnetic semiconductor material.

Magnetic semiconductor material

Provides a new non-oxide system compound material superconductor as an alternative of the perovskite type copper oxides superconductor. Layered compounds which are represented by chemical formula AF(TM)Pn (wherein, A is at least one selected from a group consisting of the second family elements in the long form periodic table, F is a fluorine ion, TM is at least one selected from a group of transition metal elements consisting of Fe, Ru, Os, Ni, Pd, and Pt, and Pn is at least one selected from a group consisting of the fifteenth family elements in the long form periodic table), having a crystal structure of ZrCuSiAs type (space group P4/nmm) and which become superconductors by doping trivalent cations or divalent anions.

Layered compound, superconductor and method for producing same

An engine control apparatus is provided that controls an engine which is restarted using an AC motor. The engine control apparatus comprises an engine rotational direction determining section, a restart command determining section and an engine restart prohibiting section. The engine rotational direction determining section is configured to determine a rotational direction of the engine. The restart command determining section is configured to determine if a restart command occurred while a rotational speed of the engine is decreasing due to an idle stop command. The engine restart prohibiting section is configured to selectively prohibit the engine from being restarted by the AC motor in response to the restart command upon determining the engine is rotating backward.

Engine control apparatus and engine control method

In an electride C12A7 provided by replacing free oxygen in 12CaO.7AlOwith electrons, a material having metallic electroconductivity and an electric conductivity of more than 5&#xd7;10S/cm at room temperature could not have been produced without difficulties. An electride 12CaO.7AlO, which has metallic electroconductivity and has an electric conductivity of more than 5&#xd7;10S/cm at room temperature, can be produced by heat-treating titanium metal vapor and 12CaO.7AlOsingle crystal, sinter, or thin film at a temperature above 600&#xb0; C. and below 1,450&#xb0; C. for less than 240 hours. Further, thermoelectric field electron release can also be realized using an electron release chip fabricated from the electride.

[object Object]

A non-fat or low-fat food and beverage product having low calories is provided. The product offers a flavor, body and fat's texture. The food and beverage product includes a fat-like texture substance containing inulin as a main ingredient and polyglutamic acid.

Low-calorie food and beverages

Growing community of inventors

Tokyo, Japan

Masahiro Hirano