Ebara Corporation

Kabushiki Kaisha Toshiba

Other

Nikon Corporation

Masahiro Hatakeyama

Tohru Satake

Nobuharu Noji

Takeshi Murakami

Shoji Yoshikawa

Tsutomu Karimata

Kenji Watanabe

Hirosi Sobukawa

Toshifumi Kimba

Mamoru Nakasuji

Katsunori Ichiki

Mutsumi Saito

Yuichiro Yamazaki

Ichirota Nagahama

Shin Oowada

Kenji Terao

Yotaro Hatamura

Yoshihiko Naito

Kenichi Suematsu

Kiwamu Tsukamoto

Ryo Tajima

Takamitsu Nagai

Masayuki Nakao

Norio Kimura

Takao Kato

Keiichi Tohyama

Yasushi Toma

Takehide Hayashi

Yutaka Tabe

Muneki Hamashima

Hiroshi Sobukawa

Tatsuya Kohama

Kazuo Yamauchi

Yasushi Tohma

Shinta Kunitomo

Kazuyoshi Sugihara

Tadasuke Kobata

Tetsuji Togawa

Hiroyuki Shinozaki

Yuta Suzuki

Taro Takahashi

Seiji Katsuoka

Shinji Yamaguchi

Katsuya Okumura

Juichi Ishiguro

Noboru Kobayashi

Masato Naka

Yoshinao Hirabayashi

Masamitsu Itoh

Satoshi Mori

Tatsuhiko Higashiki

Toru Osuga

Tetsuro Sugiura

Takumi Ota

Shinichi Okada

Katsuaki Usui

Kazutoshi Nagai

Masaaki Kajiyama

Tomoyuki Yahiro

Masao Saitoh

Takashi Tsuzuki

Koichi Iwasaki

Toru Kaga

Masatoshi Tsuneoka

Keiji Maishigi

Chikako Takatou

Nabuharu Noji

Nobuhara Noji

Chikako Honma

Jie Yuan Lin

An information processing apparatus detecting presence or absence of abnormality of a vacuum pump derived from a product produced within a target vacuum pump, including:

Information processing apparatus, information processing system, information processing method, program, substrate processing apparatus, criterion data determination apparatus, and criterion data determination method

A CMP polishing apparatus for flattening a quadrate substrate is provided. A polishing apparatus for polishing a quadrate substrate is provided. The polishing apparatus includes a substrate holding portion configured to hold the quadrate substrate. The substrate holding portion includes a quadrate substrate supporting surface that supports the substrate, and an attachment mechanism that attaches a retainer member to be disposed at an outside of at least one corner portion of the substrate supporting surface.

Polishing apparatus of substrate

To terminate polishing at an appropriate position, an end point position of the polishing is sensed. According to one embodiment, a method that chemomechanically polishes a substrate including a functional chip is provided. The method includes: a step of disposing the functional chip on the substrate; a step of disposing an end point sensing element on the substrate; a step of sealing the substrate on which the functional chip and the end point sensing element are disposed with an insulating material; a step of polishing the insulating material; and a step of sensing an end point of the polishing based on the end point sensing element while the insulating material is polished.

Method for polishing substrate including functional chip

In a scheme in which a top ring is held to an end portion of a swing arm, the present invention improves accuracy of polishing end point detection. A polishing apparatus for polishing between a polishing padand a semiconductor waferdisposed opposed to the polishing padincludes a polishing tableA for holding the polishing padand a top ringA for holding the semiconductor wafer. A swing shaft motorswings a swing armfor holding the top ringA. The arm torque detection sectiondetects arm torque applied to the swing arm. An end point detection sectiondetects a polishing end point indicating an end of polishing based on the detected arm torque.

Polishing apparatus

Provided is a method of adjusting an electron-beam irradiated area in an electron beam irradiation apparatus that deflects an electron beam with a deflector to irradiate an object with the electron beam, the method including: emitting an electron beam while changing an irradiation position on an adjustment plate by controlling the deflector in accordance with an electron beam irradiation recipe, the adjustment plate detecting a current corresponding to the emitted electron beam; acquiring a current value detected from the adjustment plate; forming image data corresponding to the acquired current value; determining whether the electron-beam irradiated area is appropriate based on the formed image data; and updating the electron beam irradiation recipe when the electron-beam irradiated area is determined not to be appropriate.

Electron-beam irradiated area adjustment method and adjustment system, electron-beam irradiated region correction method, and electron beam irradiation apparatus

An inspection device for inspecting a surface of an inspection object using a beam includes a beam generator capable of generating one of either charge particles or an electromagnetic wave as a beam, a primary optical system capable of guiding and irradiating the beam to the inspection object supported within a working chamber, a secondary optical system capable of including a first movable numerical aperture and a first detector which detects secondary charge particles generated from the inspection object, the secondary charge particles passing through the first movable numerical aperture, an image processing system capable of forming an image based on the secondary charge particles detected by the first detector; and a second detector arranged between the first movable numerical aperture and the first detector and which detects a location and shape at a cross over location of the secondary charge particles generated from the inspection object.

Inspection device

An electron beam inspection device includes: a primary electron optical system that irradiates the surface of a sample with an electron beam; and a secondary electron optical system that gathers secondary electrons emitted from the sample and forms an image on the sensor surface of a detector. An electron image of the surface of the sample is obtained from a signal detected by the detector, and the sample is inspected. A cylindrical member that is formed with conductors stacked as an inner layer and an outer layer, and an insulator stacked as an intermediate layer is provided inside a lens tube into which the secondary electron optical system is incorporated. An electron orbital path is formed inside the cylindrical member, and the members constituting the secondary electron optical system are arranged outside the cylindrical member.

A technique capable of improving the ability to observe a specimen using an electron beam in an energy region which has not been conventionally given attention is provided. This specimen observation method comprises: irradiating the specimen with an electron beam; detecting electrons to be observed which have been generated and have obtained information on the specimen by the electron beam irradiation; and generating an image of the specimen from the detected electrons to be observed. The electron beam irradiation comprises irradiating the specimen with the electron beam with a landing energy set in a transition region between a secondary emission electron region in which secondary emission electrons are detected and a mirror electron region in which mirror electrons are detected, thereby causing the secondary emission electrons and the mirror electrons to be mixed as the electrons to be observed. The detection of the electrons to be observed comprises performing the detection in a state where the secondary emission electrons and the mirror electrons are mixed. Observation and inspection can be quickly carried out for a fine foreign material and pattern of 100 nm or less.

Specimen observation method and device using secondary emission electron and mirror electron detection

A surface processing apparatus is an apparatus which performs surface processing on an inspection objectby irradiating the inspection object with an electron beam. A surface processing apparatus includes: an electron source(including lens system that controls beam shape of electron beam) which generates an electron beam; a stageon which an inspection objectto be irradiated with the electron beam is set; and an optical microscopefor checking a position to be irradiated with the electron beam. The current value of the electron beam which irradiates the inspection objectis set at 10 nA to 100 A.

Surface processing apparatus

An inspection apparatus includes beam generation means, a primary optical system, a secondary optical system and an image processing system. Irradiation energy of the beam is set in an energy region where mirror electrons are emitted from the inspection object as the secondary charged particles due to the beam irradiation. The secondary optical system includes a camera for detecting the secondary charged particles, a numerical aperture whose position is adjustable along an optical axis direction and a lens that forms an image of the secondary charged particles that have passed through the numerical aperture on an image surface of the camera. In the image processing system, the image is formed under an aperture imaging condition where the position of the numerical aperture is located on an object surface to acquire an image.

Inspection apparatus

An inspection apparatus capable of facilitating reduction in cost of the apparatus is provided. The inspection apparatus includes: beam generation means for generating any of charged particles and electromagnetic waves as a beam; a primary optical system that guides the beam into an inspection object held on a movable stage in a working chamber and irradiates the inspection object with the beam; a secondary optical system that detects secondary charged particles occurring from the inspection object; and an image processing system that forms an image on the basis of the detected secondary charged particles. The inspection apparatus further includes: a linear motor that drives the movable stage; and a Helmholtz coil that causes a magnetic field for canceling a magnetic field caused by the linear motor when the movable stage is driven.

A substrate is irradiated by primary electrons and secondary electrons generated from the substrate are detected by a detector. A reference die is placed on the stage to obtain a pattern matching template image including feature coordinates of the reference die. A pattern matching is performed with an arbitrary die in a row or column including the reference die using the template image to obtain feature coordinates of the arbitrary die. An angle of misalignment is calculated between the direction of the row or column including the reference die and one of the directions of movement of the substrate on the basis of the feature coordinates of the arbitrary die and those of the reference die. The stage is rotated to correct the angle of misalignment to conform the direction of the row or column including the reference die with the one of the directions of movement of the substrate.

Testing apparatus using charged particles and device manufacturing method using the testing apparatus

An inspection apparatus by an electron beam comprises: an electron-optical devicehaving an electron-optical system for irradiating the object with a primary electron beam from an electron beam source, and a detector for detecting the secondary electron image projected by the electron-optical systems; a stage systemfor holding and moving the object relative to the electron-optical system; a mini-environment chamberfor supplying a clean gas to the object to prevent dust from contacting the object; a working chamberfor accommodating the stage device, the working chamber being controllable so as to have a vacuum atmosphere; at least two loading chambersdisposed between the mini-environment chamber and the working chamber, adapted to be independently controllable so as to have a vacuum atmosphere; and a loaderfor transferring the object to the stage system through the loading chambers.

Inspection system by charged particle beam and method of manufacturing devices using the system

Growing community of inventors

Tokyo, Japan

Masahiro Hatakeyama