Hoya Corporation

Nec Corporation

Nissan Chemical Industries Limited

Nuflare Technology, Inc.

Hoya Electronics Singapore Pte. Ltd.

Masahiro Hashimoto

Atsushi Kominato

Hiroyuki Iwashita

Osamu Nozawa

Hiroaki Shishido

Toshiyuki Suzuki

Kazuya Sakai

Yasushi Okubo

Rikimaru Sakamoto

Takeyuki Yamada

Kazunori Ono

Masaki Nagai

Takahiro Hiromatsu

Tomoyuki Enomoto

Yasushi Sakaida

Takahiro Sakaguchi

Hirotaka Nakano

Hideaki Mitsui

Morio Hosoya

Ryuta Mizuochi

Koji Manabe

Takashi Kamikubo

Ryo Ohkubo

Hitoshi Maeda

Hirohito Anze

Hitoshi Sunaoshi

Takayuki Ohnishi

Yasunori Yokoya

Mitsuhiro Shirakura

Mariko Uchida

Isao Kawasumi

Kenta Tsukagoshi

Tooru Fukui

Hiroshi Shirotori

Yuusuke Honma

Provided is a mask blank, including a phase shift film. The phase shift film has a structure where a first layer and a second layer are stacked in this order from a side of the transparent substrate. The first layer is provided in contact with a surface of the transparent substrate. Refractive indexes nand nof the first layer and the second layer, respectively, at a wavelength of an exposure light of an ArF excimer laser satisfy the relation n&#x3c;n. Extinction coefficients kand kof the first layer and the second layer, respectively, at a wavelength of the exposure light satisfy the relation k&#x3c;k. Film thicknesses dand dof the first layer and the second layer, respectively, satisfy the relation d&#x3c;d.

Mask blank, phase-shift mask, and method of manufacturing semiconductor device

A mask blank that includes a thin film made of a material containing silicon and nitrogen for forming a transfer pattern on a transparent substrate. In conducting an X-ray photoelectron spectroscopy on a plurality of measurement locations in an inner region, which is a region excluding a vicinity region and a surface layer region of the thin film, in order to acquire an average value PSi_fi_av of maximum peaks PSi_fi of photoelectron intensity of Si2p narrow spectrum and conducting an X-ray photoelectron spectroscopy on a plurality of measurement locations in the transparent substrate to acquire an average value PSi_sb_av of maximum peaks PSi_sb of photoelectron intensity of Si2p narrow spectrum, (PSi_fi_av)/(PSi_sb_av) is 1.08 or more.

Mask blank, transfer mask, method of manufacturing a transfer mask, and method of manufacturing a semiconductor device

This mask blank has a structure wherein a phase shift film and a light shielding film are sequentially formed as layers in this order on a transparent substrate. The optical density of the layered structure composed of the phase shift film and the light shielding film with respect to exposure light, which is an ArF excimer laser, is 3.5 or more; and the light shielding film has a structure wherein a lower layer and an upper layer are formed as layers sequentially from the transparent substrate side. The lower layer is formed from a material wherein the total content of chromium, oxygen, nitrogen and carbon is 90 atomic % or more; and the upper layer is formed from a material wherein the total content of metals and silicon is 80 atomic % or more. The extinction coefficient kof the upper layer for the exposure light is higher than the extinction coefficient kof the lower layer for the exposure light.

Mask blank, phase shift mask and method for manufacturing semiconductor device

There is provided a mask blank including on a substrate: a thin film for forming a transfer pattern; a resist underlayer formed on the thin film and made of a resist underlayer composition containing a polymer having a unit structure having a lactone ring and a unit structure having a hydroxyl group; a resist film formed on the resist underlayer film and made of a resist composition; and a mixed film formed so as to be interposed between the resist underlayer film and the resist film and made of a mixed component containing the resist underlayer composition and the resist composition.

Mask blank, method for manufacturing mask blank and transfer mask

Provided is a mask blank, including: a resist layer formed by a chemically amplified resist; a protective layer formed to coat the resist layer; and a buffer layer provided between the resist layer and the protective layer, wherein the protective layer contains an acidic substance, a basic substance, and a salt generated by a reaction between the acidic substance and the basic substance, and the buffer layer has a portion which is a surface layer portion of a pre-coated resist layer before being coated by the protective layer, and in which the pre-coated resist layer and the protective layerare in contact with each other, and this portion is formed by receiving the acidic substance, the basic substance, and the salt moved from the protective layer

Mask blank, method of manufacturing mask blank and method of manufacturing transfer mask

A mask blank, including: a thin film for forming a transfer pattern; a resist underlying film made of a resist underlying composition and provided on the thin film; a resist film made of a chemically amplified resist and provided on the resist underlying film; and a mixture film provided so as to be interposed between the resist underlying film and the resist film, wherein the resist underlying film is configured so that a molecular weight is reduced from the thin film side to the resist film side in a thickness direction, and has a low molecular weight region in which the molecular weight is low on the resist film side surface, and the mixture film is formed by mixing a component of the low molecular weight region and a component of the chemically amplified resist.

Mask blank and transfer mask

Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blankis used for producing a transfer mask adapted to be applied with ArF exposure light and has a light-shielding filmon a transparent substrate. The light-shielding filmis composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen. An etching rate of the light-shielding film by a fluorine-containing substance in a state of not being irradiated with charged particles is low enough to at least ensure etching selectivity with respect to an etching rate of the light-shielding film by the fluorine-containing substance in a state of being irradiated with the charged particles.

Mask blank, transfer mask and method of manufacturing transfer mask

A mask blank for use in the manufacture of a binary mask adapted to be applied with ArF excimer laser exposure light has, on a transparent substrate, a light-shielding film for forming a transfer pattern. The light-shielding film has a laminated structure of a lower layer and an upper layer and has an optical density of 2.8 or more for exposure light and a thickness of 45 nm or less. The lower layer is made of a material in which the total content of a transition metal and silicon is 90 at % or more, and has a thickness of 30 nm or more. The upper layer has a thickness of 3 nm or more and 6 nm or less. The phase difference between exposure light transmitted through the light-shielding film and exposure light transmitted in air for a distance equal to the thickness of the light-shielding film is 30 degrees or less.

Provided is a method of manufacturing a mask blank that is improved in cleaning resistance to ozone cleaning or the like, thus capable of preventing degradation of the mask performance due to the cleaning. The method is for manufacturing a mask blank having, on a substrate, a thin film which is formed at its surface with an antireflection layer made of a material containing a transition metal, and carries out a treatment of causing a highly concentrated ozone gas with a concentration of 50 to 100 vol % to act on the antireflection layer to thereby form a surface modified layer comprising a strong oxide film containing an oxide of the transition metal at a surface of the antireflection layer.

Mask blank, method of manufacturing the same, transfer mask, and method of manufacturing the same

A photomask blank for use in the manufacture of a photomask adapted to be applied with exposure light having a wavelength of 200 nm or less has a thin film on a transparent substrate. The thin film is made of a material containing a transition metal, silicon, and carbon and comprising silicon carbide and/or a transition metal carbide.

Photomask blank, method of manufacturing the same, photomask, and method of manufacturing the same

A mask blank for manufacturing a transfer mask adapted to be applied with ArF excimer laser exposure light that has a transparent substrate and a light-shielding film formed into a transfer pattern. The light-shielding film has at least two-layers, one a lower layer composed mainly of a first material containing a transition metal, silicon, and nitrogen, and the other an upper layer composed mainly of a second material containing a transition metal, silicon, and nitrogen. A ratio of a first etching rate of the lower layer to a second etching rate of the upper layer is 1.0 or more and 5.0 or less in etching carried out by supplying a fluorine-containing substance onto a target portion and irradiating charged particles to the target portion. Another ratio satisfies the following formula CN&#x2267;&#x2212;0.00526CMo2&#x2212;0.640CMo+26.624.

Provided is a mask blank that is improved in adhesion of a thin film for forming a transfer pattern to a resist, thus capable of suppressing the occurrence of collapse, chipping, or the like of a formed resist pattern. The mask blank has, on a transparent substrate, a thin filmwhich is for forming a transfer pattern and is made of a material containing a metal. The thin filmhas a surface modified layer in the form of an oxide film containing a hydrocarbon. The surface modified layer of the thin filmcan be formed by, for example, causing a highly concentrated ozone gas and an unsaturated hydrocarbon gas to act on the thin film.

Mask blank, method of manufacturing the same, and transfer mask

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Tokyo, Japan

Masahiro Hashimoto