Lapis Semiconductor Co., Ltd.

Masahiro Haraguchi

Kenichi Furuta

Tsuyoshi Inoue

Masao Tsujimoto

Toshiyuki Orita

Takaaki Kodaira

Tomoko Yonekura

Yoshinobu Takeshita

Toshifumi Kobe

Yuuichi Kaneko

Nobuhiro Terada

Kiyofumi Kondo

Hiroki Kuroki

A semiconductor device, including: a semiconductor substrate formed of silicon carbide, components being formed at one surface of the semiconductor substrate; a periphery portion disposed at a pre-specified region of a periphery of the semiconductor substrate, the components not being formed at the periphery portion; and a plurality of trenches or portions of trenches formed at the periphery portion, an interior of each of the trenches being filled with a material with a different coefficient of thermal expansion from the silicon carbide.

Semiconductor device and semiconductor wafer

The semiconductor device includes a semiconductor substrate of first conductivity type including a cell area and a peripheral area surrounding cell area on a principal surface thereof, a first diffusion layer which is disposed in peripheral area, surrounds the cell area and has a second conductivity type different from the first conductivity type, an electrode which is disposed in the peripheral area, is in contact with the principal surface through an opening provided in an insulating member and is connected to the first diffusion layer, and a second diffusion layer of the first conductivity type which is formed on the principal surface of a region enclosed in the electrode distant from the first diffusion layer when viewed in a direction perpendicular to the principal surface and includes a linear portion having a first width and a curved portion having a portion with a second width greater than the first width.

Semiconductor device

Growing community of inventors

Miyazaki, Japan

Masahiro Haraguchi