Mitsubishi Heavy Industries Limited

National Institute of Advanced Industrial Science and Technology

Mitsubishi Heavy Industries Machine Tool Co., Ltd.

Masahiro Funayama

Takayuki Goto

Jun Utsumi

Hideki Takagi

Koji Nakano

Kenji Fujiwara

Kensuke Ide

Yoshikatsu Kuroda

Daishi Ueno

Shinichi Kobayashi

Yuichi Kondo

Taro Wada

Kenj Fujiwara

Teruo Takeshita

An inter-substrate material layer is formed between a first substrate and a second substrate to generate a bonding strength. A plurality of metal elements are present in the inter-substrate material layer. An interface element existence ratio of the plurality of metal elements is 0.07 or above. A device can be obtained in which substrates difficult to bond (for example, SiOsubstrates) are bonded at room-temperature to have practical bonding strength.

Device manufactured by room-temperature bonding, device manufacturing method, and room-temperature bonding apparatus

A device is provided with: a first substrate mainly containing silicon dioxide; a second substrate mainly containing silicon, compound semiconductor, silicon dioxide or fluoride; and a bonding functional intermediate layer arranged between the first substrate and the second substrate. The first substrate is bonded to the second substrate thorough room temperature bonding in which a sputtered first surface of the first substrate is contacted with a sputtered second surface of the second substrate via the bonding functional intermediate layer. Here, the material of the bonding functional intermediate layer is selected from among optically transparent materials which are oxide, fluoride, or nitride, the materials being different from the main component of the first substrate and different from the main component of the second substrate.

Manufcaturing method for room-temperature substrate bonding

A method of room-temperature bonding a plurality of substrates via an intermediate member, includes: forming the intermediate member on a surface to be bonded of the substrate by physically sputtering a plurality of targets; and activating the surface to be bonded by an ion beam. In this case, it is preferable that the target composed of a plurality of types of materials is physically sputtered. Since the materials of the intermediate member are sputtered from the plurality of targets arranged in various directions from the surface to be bonded of the substrate, the intermediate member can be uniformly formed on the surface to be bonded. Further, since the intermediate member is composed of the plurality of types of materials, the room-temperature bonding of substrates difficult to bond together when an intermediate member is composed of a single type of material can be performed without heating and excessively pressing the substrates during bonding.

Room-temperature bonding method and room-temperature bonding apparatus including sputtering

A method of room-temperature bonding a plurality of substrates via an intermediate member, includes: forming the intermediate member on a surface to be bonded of the substrate by physically sputtering a plurality of targets; and activating the surface to be bonded by an ion beam. Preferably, the target composed of a plurality of types of materials is physically sputtered. Since the materials of the intermediate member are sputtered from the plurality of targets arranged in various directions from the surface to be bonded of the substrate, the intermediate member can be uniformly formed on the surface to be bonded. Further, since the intermediate member is composed of the plurality of types of materials, the room-temperature bonding of substrates difficult to bond together when an intermediate member is composed of a single type of material can be performed without heating and excessively pressing the substrates during bonding.

Room temperature bonding using sputtering

An object is to provide a semiconductor element module having high reliability, superior electric connection and thermal connection and capable of securing sufficient cooling performance, and also to provide a method for manufacturing the same. The semiconductor element module () comprises an IGBT () and a diode () having electrodes formed on surfaces of both sides thereof, a ceramic substrate (), in which thermal conductivity is high, having wiring circuit layers () formed on the surface thereof for bonding to surfaces of one side of the IGBT () and the diode (), a ceramic substrate (), in which thermal conductivity is high, having a wiring circuit layer () formed on the surface thereof for bonding to surfaces of other side of the IGBT () and the diode (), and a sealing member () which is sandwiched between the outer edges of the ceramic substrates () for sealing inside thereof; and these members are bonded by room-temperature bonding.

Semiconductor element module and method for manufacturing the same

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Tokyo, Japan

Masahiro Funayama