Sharp Kabushiki Kaisha Corporation

Masahiro Araki

Takeshi Kamikawa

Yuhzoh Tsuda

Atsushi Ogawa

Eiji Yamada

Yoshihiro Ueta

Takayuki Yuasa

Mototaka Taneya

Yoshika Kaneko

Takaaki Utsumi

Shigetoshi Ito

Haruhisa Takiguchi

Takao Kinoshita

Shinya Yoshida

Masahiro Shiota

Masahiko Sakata

Masayuki Hoteida

Tohru Murata

Akihiro Urata

Takeshi Funaki

A nitride semiconductor structure in which a first nitride semiconductor underlying layer is provided on a substrate having a recess portion and a projection portion provided between the recess portions at a surface thereof, the first nitride semiconductor underlying layer has at least 6 first oblique facet planes surrounding the projection portion on an outer side of the projection portion, and a second nitride semiconductor underlying layer buries the first oblique facet planes, a nitride semiconductor light emitting element, a nitride semiconductor transistor element, a method of manufacturing a nitride semiconductor structure, and a method of manufacturing a nitride semiconductor element are provided.

Nitride semiconductor structure, nitride semiconductor light emitting element, nitride semiconductor transistor element, method of manufacturing nitride semiconductor structure, and method of manufacturing nitride semiconductor element

Provided is a functional element which is obtained by forming a lamination film on a substrate and then dividing the substrate and the lamination film into a desired shape. The functional element has a hexagonal substrate, a lamination film formed on a C surface of the substrate, and a plurality of divided surfaces which are exposed by dividing the substrate into quadrilaterals. At least one line of division lines in the case of dividing the substrate into quadrilaterals is perpendicular to any one of equivalent directions of [-, and [-of the substrate from a [] direction of the substrate, and the divided surfaces formed by the division lines are inclined in a direction of other divided surfaces to which at least a part thereof is opposed.

Functional element and manufacturing method of same

Provided is a method for manufacturing a nitride semiconductor device, including the steps of: forming an AlNO buffer layer containing at least aluminum, nitrogen, and oxygen on a substrate; and forming a nitride semiconductor layer on the AlNO buffer layer, wherein, in the step of forming the AlNO buffer layer, the AlNO buffer layer is formed by a reactive sputtering method using aluminum as a target in an atmosphere to and from which nitrogen gas and oxygen gas are continuously introduced and exhausted, and the atmosphere is an atmosphere in which a ratio of a flow rate of the oxygen gas to a sum of a flow rate of the nitrogen gas and the flow rate of the oxygen gas is not more than 0.5%.

Method for manufacturing nitride semiconductor device, nitride semiconductor light-emitting device, and light-emitting apparatus

A nitride semiconductor device is provided that prevents development of cracks, that has nitride semiconductor thin films with uniform thicknesses and good growth surface flatness, and is thus consistent in characteristics, and that can be fabricated at a satisfactory yield. In this nitride semiconductor device, the nitride semiconductor thin films are grown on a substrate having an off-angle between a direction normal to the surface of ridges and the crystal direction &#x3c;0001&#x3e;. This helps either reduce or intentionally promote diffusion or movement of the atoms or molecules of a source material of the nitride semiconductor thin films through migration thereof. As a result, a nitride semiconductor growth layer with good surface flatness can be formed, and thus a nitride semiconductor device with satisfactory characteristics can be obtained.

Nitride semiconductor device

On a processed substrate having an engraved region as a depressed portion formed thereon, a nitride semiconductor thin film is laid. The sectional area occupied by the nitride semiconductor thin film filling the depressed portion is 0.8 times the sectional area of the depressed portion or less.

Nitride semiconductor layers on substrate having ridge portions with inflow prevention walls near engraved regions

A nitride semiconductor laser device uses a substrate with low defect density, contains reduced strains inside a nitride semiconductor film, and thus offers a satisfactorily long useful life. On a GaN substrate () with a defect density as low as 10cmor less, a stripe-shaped depressed portion () is formed by etching. On this substrate (), a nitride semiconductor film () is grown, and a laser stripe () is formed off the area right above the depressed portion (). With this structure, the laser stripe () is free from strains, and the semiconductor laser device offers a long useful life. Moreover, the nitride semiconductor film () develops reduced cracks, resulting in a greatly increased yield rate.

Nitride semiconductor light-emitting device and method for fabrication thereof

Nitride semiconductor device with depressed portion

A nitride compound semiconductor light emitting device includes: a GaN substrate having a crystal orientation which is tilted away from a &#x3c;0001&#x3e; direction by an angle which is equal to or greater than about 0.05&#xb0; and which is equal to or less than about 2&#xb0;, and a semiconductor multilayer structure formed on the GaN substrate, wherein the semiconductor multilayer structure includes: an acceptor doping layer containing a nitride compound semiconductor; and an active layer including a light emitting region.

Nitride compound semiconductor light emitting device and method for producing the same

Method for fabrication of semiconductor device

According to an aspect of the present invention, a nitride semiconductor light emitting device includes a light emitting layer () having a quantum well structure with quantum well layers and barrier layers laminated alternately. The well layer is formed of a nitride semiconductor containing In, and the barrier layer is formed of a nitride semiconductor layer containing As, P or Sb. According to another aspect of the present invention, a nitride semiconductor light emitting device includes a light emitting layer having a quantum well structure with quantum well layers and barrier layers laminated alternately. The well layer is formed of GaNAsPSb(0&#x3c;x+y+z&#x2266;0.3), and the barrier layer is formed of a nitride semiconductor containing In.

Nitride semiconductor light emitting element and optical device containing it

The present nitride semiconductor light emitting device includes a nitride semiconductor thick film substrate and a light emitting layered structure including a plurality of nitride semiconductor layers stacked on the substrate. The nitride semiconductor substrate includes at least two layer regions including a first layer region of a high impurity concentration and a second layer region of an impurity concentration lower than the first layer region. The light emitting layered structure is formed on the first layer region of the substrate.

Nitride semiconductor light emitting device

A GaN light-emitting device is provided having a low specific contact resistance of an n-type electrode as well as a low threshold voltage or threshold current density. The GaN light-emitting device has an electrode formed on a nitrogen-terminated surface of a GaN substrate. Specifically, the GaN light-emitting device includes the GaN substrate, a plurality of GaN compound semiconductor layers formed on the GaN substrate, and the n-type electrode and a p-type electrode, wherein the semiconductor substrate is of n-type and the n-type electrode is formed on the nitrogen-terminated surface of the semiconductor substrate. The concentration of n-type impurities in the substrate preferably ranges from 1&times;10 cm to 1&times;10 cm . The substrate preferably includes at least a first portion forming the nitrogen-terminated surface and having a first concentration of n-type impurities and a second portion having a second concentration of n-type impurities lower than the first concentration of n-type impurities.

Growing community of inventors

Tenri, Japan

Masahiro Araki